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    ATC100B2R2 Price and Stock

    American Technical Ceramics Corp ATC100B2R2CW500

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    Bristol Electronics ATC100B2R2CW500 200
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    Quest Components ATC100B2R2CW500 160
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    American Technical Ceramics Corp ATC100B2R2CP

    100B2R2CP
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    Quest Components ATC100B2R2CP 5
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    ATC100B2R2CP 2
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    American Technical Ceramics Corp ATC100B2R2CP500XB

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, 11.3636% +TOL, 11.3636% -TOL, BG, 90+/-20PPM/CEL TC, 0.0000022UF, SURFACE MOUNT, 1111
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    Quest Components ATC100B2R2CP500XB 5
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    American Technical Ceramics Corp ATC100B2R2BP500XT

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, 4.5455% +TOL, 4.5455% -TOL, P90, 90+/-20PPM/CEL TC, 0.0000022UF, SURFACE MOUNT, 1111
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    Quest Components ATC100B2R2BP500XT 4
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    American Technical Ceramics Corp ATC100B2R2BMS500XB

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, 4.5455% +TOL, 4.5455% -TOL, BG, 90+/-20PPM/CEL TC, 0.0000022UF, SURFACE MOUNT, 1411
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    Quest Components ATC100B2R2BMS500XB 2
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    ATC100B2R2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C5750X7S2A106MT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18210WHSR3 MRF8S18210WGHSR3 Designed for CDMA base station applications with frequencies from1805 MHz


    Original     		MRF8S18210WHS MRF8S18210WHSR3 MRF8S18210WGHSR3 from1805 MRF8S18210WHSR3 C5750X7S2A106MT PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with


    Original     		MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S38010H Rev. 0, 8/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class


    Original     		MRF7S38010H MRF7S38010HR3 MRF7S38010HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20180 RFG1M20180 180W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high


    Original     		RFG1M20180 RFG1M20180 DS130822 PDF

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239 PDF

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152 PDF

    transistor j241

    Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S9120N MRF8S9120NR3 transistor j241 ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor PDF

    J103 transistor

    Abstract: transistor c223
    Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced


    Original     		PTFB072707FH PTFB072707FH b072707fh-gr1 J103 transistor transistor c223 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies


    Original     		MMRF1009H MMRF1009HR5 MMRF1009HSR5 MMRF1009HR5 PDF

    LDMOS DVB-T transistors

    Abstract: 470-860 CRCW120610RJ RF high POWER TRANSISTOR
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with


    Original     		MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 LDMOS DVB-T transistors 470-860 CRCW120610RJ RF high POWER TRANSISTOR PDF

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac PDF

    NIPPON CAPACITORS

    Abstract: Transistor J438 CRCW08051001FKEA MRF21010
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF21010--2 MRF21010LSR1 MRF21010--2 NIPPON CAPACITORS Transistor J438 CRCW08051001FKEA MRF21010 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station


    Original     		MRF8S7170N MRF8S7170NR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 3, 6/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 MRF6V12500HR3 PDF

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S18060NBR1 MRF6S18060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18060NR1 MRF6S18060NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and


    Original     		MRF6S18060N MRF6S18060NR1 MRF6S18060NBR1 MRF6S18060NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S18060NBR1 PDF

    CRCW08051001FKEA

    Abstract: MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010
    Text: Document Number: MRF21010-1 Rev. 10, 10/2008 Freescale Semiconductor Technical Data MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF21010--1 MRF21010LR1 CRCW08051001FKEA MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010 PDF

    CRCW08051001FKEA

    Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
    Text: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF21010--2 MRF21010LSR1 CRCW08051001FKEA TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S220W02S Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		AFT21S220W02S AFT21S220W02SR3 AFT21S220W02GSR3 2/2014Semiconductor, PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 1/2014 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies


    Original     		MMRF1009H MMRF1009HR5 MMRF1009HSR5 MMRF1009HR5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S140W02S Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		AFT21S140W02S AFT21S140W02SR3 AFT21S140W02GSR3 2/2014Semiconductor, PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 2, 2/2014 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S7170N MRF8S7170NR3 2/2014Semiconductor, PDF

    J209

    Abstract: MW7IC3825GN MW7IC3825GNR1 MW7IC3825NR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 1, 11/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on-chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage


    Original     		MW7IC3825N MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 J209 MW7IC3825GN PDF

    DVB-T Schematic

    Abstract: LDMOS DVB-T transistors DVB-T acpr MRF6VP3091N mrf6v3090n
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 0, 9/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NBR1 MRF6VP3091N DVB-T Schematic LDMOS DVB-T transistors DVB-T acpr mrf6v3090n PDF

    MOSFET J132

    Abstract: J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114
    Text: Document Number: MRF8S7170N Rev. 0, 2/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station


    Original     		MRF8S7170N MRF8S7170NR3 MOSFET J132 J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114 PDF