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Kyocera AVX Components 100B220JT500XTV Silicon RF Capacitors / Thin Film 500V 22pF Tol 5% Las Mkg Vertical
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ATC100B220JT500 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier	Original	MRFE6S9160H MRFE6S9160HR3 MRFE6S9160HSR3	PDF
A114 Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 atc100b220j Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRF6S9160H MRF6S9160HR3/HSR3 MRFE6S9160HR3/HSR3. PCN12895 MRF6S9160HR3 MRF6S9160HSR3 A114 AN1955 JESD22 MRF6S9160H MRF6S9160HSR3 atc100b220j	PDF
D260-4118-0000 Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac	PDF
NIPPON CAPACITORS Abstract: A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HSR3 d 5287 transistor Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H - 2 Rev. 3, 3/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.	Original	MRF5S9150H MRF5S9150HSR3 150icers, MRF5S9150H-2 NIPPON CAPACITORS A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HSR3 d 5287 transistor Nippon chemi	PDF
transistor c 5287 Abstract: NIPPON CAPACITORS A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HR3 d 5287 transistor Text: Document Number: MRF5S9150H - 1 Rev. 2, 3/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9150HR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.	Original	MRF5S9150H MRF5S9150HR3 MRF5S9150H-1 transistor c 5287 NIPPON CAPACITORS A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HR3 d 5287 transistor	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRFE6S9160HR3 MRFE6S9160HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier	Original	MRFE6S9160H MRFE6S9160HR3 MRFE6S9160HSR3 A114 A115 AN1955 C101 JESD22 MRFE6S9160HSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRF6S9160H MRF6S9160HR3/HSR3 MRFE6S9160HR3/HSR3. PCN12895 MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160HR3	PDF
B10T Abstract: multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 4, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with	Original	MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 B10T multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22	PDF
ATC100B471JT200XT Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1	PDF
ATC100B910 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with	Original	MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 ATC100B910	PDF
250GX-0300-55-22 Abstract: ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with	Original	MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 250GX-0300-55-22 ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1	PDF
Chemi-Con DATE CODES Abstract: transistor c 5287 MRF5S9150HS T491C105K0 ATC100B220JT500XT NIPPON CAPACITORS AN1955 ATC100B470JT500XT GX-0300-55-22 JESD22-A114 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H-1 Rev. 2, 12/2009 RF Power Field Effect Transistor MRF5S9150HR3 Designed for N-CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.	Original	MRF5S9150H-1 MRF5S9150HR3 IS-95 Chemi-Con DATE CODES transistor c 5287 MRF5S9150HS T491C105K0 ATC100B220JT500XT NIPPON CAPACITORS AN1955 ATC100B470JT500XT GX-0300-55-22 JESD22-A114	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25N MRFE6VS25NR1 25cale	PDF
250GX-0300-55-22 Abstract: ATC100B102JT50XT Text: Freescale Semiconductor Technical Data Document Number: MMRF1012N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1012NR1 Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in	Original	MMRF1012N MMRF1012NR1 250GX-0300-55-22 ATC100B102JT50XT	PDF

A114 Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 ALT101 Text: Freescale Semiconductor Technical Data MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9160HR3 MRF6S9160HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRF6S9160HR3/HSR3 MRFE6S9160HR3/HSR3. PCN12895 MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160HR3 MRF6S9160H A114 AN1955 JESD22 MRF6S9160H MRF6S9160HSR3 ALT101	PDF
ATC100B220JT500 Abstract: A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRFE6S9160HR3 MRFE6S9160HSR3 atc100b220j Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier	Original	MRFE6S9160H MRFE6S9160HR3 MRFE6S9160HSR3 ATC100B220JT500 A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRFE6S9160HSR3 atc100b220j	PDF