ATC100B0R4BT500XT Search Results

transistor j241

Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of

C5750X5R1H106MT

Abstract: MRF7S21210HS S2116
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to

ATC600 capacitor

Abstract: MRF7S21170HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S240-12S Rev. 0, 4/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

atc600

Abstract: 465B A114 A115 AN1955 JESD22 MRF7S21170HR3 MRF7S21170HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 5, 4/2008 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

0119A

Abstract: IC/0119A IC/IC/0119A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

WELWYN c21

Contextual Info: Document Number: AFT26HW050S Rev. 1, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous

atc600

Abstract: ATC600 CAPACITORS 465B A114 A115 AN1955 JESD22 MRF7S21170HR3 MRF7S21170HSR3 ATC100B0R3BT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 4, 5/2007 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

NI-880XS-2

Abstract: J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S aft18s290-13s AFT18S290 ATC100B0R4BT500XT nichicon HD
Contextual Info: Document Number: AFT18S290−13S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.

WELWYN c21

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT26HW050S Rev. 2, 7/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 6, 3/2011 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

WELWYN resistor C21

Abstract: WELWYN c21 J-030
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev. 1, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S19210HR3 MRF7S19210HSR3 Designed for CDMA base station applications with frequencies from 1930 to

Contextual Info: Document Number: AFT26HW050S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 1, 1/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to

222212018471

Abstract: A114 A115 AN1955 C101 JESD22 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev. 0, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19210HR3 MRF7S19210HSR3 Designed for CDMA base station applications with frequencies from 1930 to

Contextual Info: Document Number: MRF8S9260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with

MRF8S9260HSR3

Abstract: MRF8S9260HR3 MRF8S9260HS JESD22-A114 AN1955 J251 C4532X5R1H475MT MRF8S9260H
Contextual Info: Document Number: MRF8S9260H Rev. 0, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with

232272461009

Abstract: PHYCOMP 2222 Phycomp chip capacitor datasheet A114 A115 AN1955 C101 JESD22 MRF7S21210HSR3 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 1, 1/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to

22-15-2256

Abstract: MRF8S9260HR3
Contextual Info: Document Number: MRF8S9260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with

12065C104KAT

Abstract: A114 A115 AN1955 C101 JESD22 MRF7S21210HSR3 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 0, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be