DK0026
Abstract: DK0002 DK00 DK0001 DK0012 DK0016 kit 500s PORCELAIN CAPACITOR PORCELAIN DK0013 DK0025
Text: American Technical Ceramics - Engineering Design Kits, Multilayer Capacit.Resistor Design Kits, Single Layer Capacitor Design Kits, SLC Design Kits About ATC | Contact | Careers | Investor Relations | ATC Multilayer Capacitor Design Kits Design Kit Overview
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DK0026
DK0002
DK00
DK0001
DK0012
DK0016 kit 500s
PORCELAIN
CAPACITOR PORCELAIN
DK0013
DK0025
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CAP 0805 ATC 600F
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
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Untitled
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
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CAP 0805 ATC 600F
Abstract: ATC 600F DK0033T DK0034T diode MARKING CODE A9 DK0035T 250v 104 K capacitor DK00 DK0032T EIA J code marking
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
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Untitled
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
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Untitled
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
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case marking y9
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
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CAP 0805 ATC 600F
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
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DK0032
Abstract: ATC 600F
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • High Self Resonance Frequencies • Environmentally safe terminations Applications:
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DK0034
DK0035
DK0032
ATC 600F
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ATC 600F
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
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CAP 0805 ATC 600F
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
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CAP 0805 ATC 600F
Abstract: ATC 600F 600F
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
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Untitled
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
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116TGA101K100TT
Abstract: 116RL101M100TT DK0084T TS0005T CAP 0805 ATC 600F DK0009T TS0004T 116RF100M100TT ts0003 DK0008T
Text: AMERICAN TECHNICAL CERAMICS DESIGN KITS C A PA C I T O R S • R E S I S T O R S • I N D U C T O R S W W W. AT C E R A M I C S . C O M A M E R I C A N T E C H N I C A L ATC North America 631-622-4700 • sales@atceramics.com w w C E R A M I C S ATC Europe
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DK0032
Abstract: DK0034 capacitor 6r8 ATC 600F DK0033
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marked Optional • High Self Resonance Frequencies Applications: • Cellular Base Station Equipment
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CAP 0805 ATC 600F
Abstract: SPLITTER-COMBINER Ferrite Circulators at 15 ghz CT11020T0050J 13.56 MHz spiral antenna ATC 600F atc 100e hybrid - tesla CT13737T0050J02 CT12010T0050J
Text: AMERICAN TECHNICAL CERAMICS QUICK REFERENCE PRODUCT SELECTION GUIDE ISO 9001 REGISTERED COMPANY QUICK REFERENCE PRODUCT SELECTION GUIDE Corporate Profile American Technical Ceramics Corp. ATC provides component and custom integrated packaging solutions for the RF, microwave and telecommunications
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CAP 0805 ATC 600F
Abstract: military resistors catalog SPLITTER-COMBINER CT12335T0050J PORCELAIN Thin Film Resistors SiCr hfss 13.56 MHZ CT12010T0050J CT12525T0050J CS12010TxxxxG
Text: AMERICAN TECHNICAL CERAMICS QUICK REFERENCE PRODUCT SELECTION GUIDE ISO 9001 REGISTERED COMPANY QUICK REFERENCE PRODUCT SELECTION GUIDE Corporate Profile American Technical Ceramics Corp. ATC provides component and custom integrated packaging solutions for the RF, microwave and telecommunications
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ATC 600F
Abstract: DK0032
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marked Optional • High Self Resonance Frequencies Applications: • Cellular Base Station Equipment
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Abstract: No abstract text available
Text: AMERICAN TECHNICAL CERAMICS QUICK REFERENCE PRODUCT SELECTION GUIDE ISO 9001 REGISTERED COMPANY W W W . A TCER A M ICS . CO M Corporate Profile ATC designs, develops, manufactures and markets Multilayer Capacitors, Single Layer Capacitors, Resistive Products, Inductors and Custom Thin Film Products
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Abstract: No abstract text available
Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features • Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package
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NPT2010
NPT2010
NDS-034
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ATC 600F
Abstract: NPTB00004 AD-016 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf
Text: AD-016 AD-016 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.7 to 5.8GHz Application design AD-016 with a Nitronex NPTB00004 GaN HEMT device has approximately 27dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 10dB gain with 23% drain efficiency at 2.5% EVM
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AD-016
AD-016
NPTB00004
27dBm
150mA.
100ma
AD-016:
ATC 600F
100uf 16v murata tantalum
GRM188R72A104KA35D
490-3285-2-ND
ERJ2GE0R00X
P033A
06031C103KAT2A
Cer cap 100uf
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Untitled
Abstract: No abstract text available
Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features • Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package
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NPT2010
NPT2010
NDS-034
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Abstract: No abstract text available
Text: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features • Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package
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NPT2022
NPT2022
NDS-038
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ATC 600F
Abstract: 200B MS3023
Text: MS3023 RF & Microwave Transistors General Purpose Amplifier Applications GENERAL DESCRIPTION The MS3023 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz frequency range. Gold metallization and emitter ballasting provide long-term
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MS3023
MS3023
Operation25
100pF
31mils,
ATC 600F
200B
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