RX1214B130Y
Abstract: RX1214B80W
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium
|
Original
|
PDF
|
RX1214B80W;
RX1214B130Y
SCA53
127147/00/02/pp12
RX1214B130Y
RX1214B80W
|
transistor oc 76
Abstract: PLB16012U Erie Electronics LTD C 829 transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET PLB16012U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input matching cell allows an easier
|
Original
|
PDF
|
PLB16012U
SCA53
127147/00/02/pp12
transistor oc 76
PLB16012U
Erie Electronics LTD
C 829 transistor
|
RX1214B170W
Abstract: 100A101
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium
|
Original
|
PDF
|
RX1214B170W
SCA53
127147/00/02/pp12
RX1214B170W
100A101
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D171 BLV2045N UHF power transistor Preliminary specification 1999 Apr 23 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N PINNING - SOT390A FEATURES • Emitter ballasting resistors for optimum temperature
|
Original
|
PDF
|
M3D171
BLV2045N
OT390A
BLV2045N
SCA63
budgetnum/printrun/ed/pp10
|
NFM61RH20T332
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV2045N UHF power transistor Preliminary specification 1998 Oct 01 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N PINNING - SOT390A FEATURES • Emitter ballasting resistors for optimum temperature
|
Original
|
PDF
|
BLV2045N
OT390A
BLV2045N
SCA60
budgetnum/printrun/ed/pp10
NFM61RH20T332
|
MCD623
Abstract: PXB16050U DK 51* transistor dk transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET PXB16050U NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cells
|
Original
|
PDF
|
PXB16050U
SCA53
127147/00/02/pp12
MCD623
PXB16050U
DK 51* transistor
dk transistor
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D171 BLV2045N UHF power transistor Preliminary specification 1999 Jan 07 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N PINNING - SOT390A FEATURES • Emitter ballasting resistors for optimum temperature
|
Original
|
PDF
|
M3D171
BLV2045N
OT390A
BLV2045N
SCA60
budgetnum/printrun/ed/pp10
|
NFM61RH20T332
Abstract: AT37281 TEKELEC AT37271 AT37271 ph98 BLV2045N MCD883
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D171 BLV2045N UHF power transistor Preliminary specification Supersedes data of 1999 May 01 2000 Feb 21 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT390A • Emitter ballasting resistors for optimum temperature
|
Original
|
PDF
|
M3D171
BLV2045N
OT390A
603516/08/pp12
NFM61RH20T332
AT37281
TEKELEC AT37271
AT37271
ph98
BLV2045N
MCD883
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium
|
Original
|
PDF
|
RX1214B80W;
RX1214B130Y
OT439
|
SL 100 NPN Transistor
Abstract: PXB16050U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor PXB16050U FEATURES QUICK REFERENCE DATA • Input and output matching cells allow an easier design of circuits Microwave performance up to T mb = 25 °C in a common base class C • Diffused emitter ballasting resistors
|
OCR Scan
|
PDF
|
PXB16050U
MCD622
OT439A.
SL 100 NPN Transistor
PXB16050U
SC15
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor
|
OCR Scan
|
PDF
|
RX1214B170W
7/00/02/pp12
|
NF4-5V
Abstract: capacitor feed-through ERIE ceramic capacitor
Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCEDATA . input matching cell allows an easier design of circuits Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.
|
OCR Scan
|
PDF
|
OT437A
AT-3-7-271SL
PLB16012U
NF4-5V
capacitor feed-through
ERIE ceramic capacitor
|
741 LEM
Abstract: AM/amplifier LEM 741
Text: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1999 A p r 23 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature
|
OCR Scan
|
PDF
|
BLV2045N
BLV2045N
OT39QA
SCA63
741 LEM
AM/amplifier LEM 741
|
FO-91 TRANSISTOR package
Abstract: at37271 TEKELEC AT37271 transistor scans sheet JCA707 PXB16050U Transistor Data chart
Text: blue binder, tab 12 Dataahaat statu* Product spécification cod* 9397 249 60142 data ol Issu* February 1990 PXB16050U NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure ; high emitter efficiency.
|
OCR Scan
|
PDF
|
PXB16050U
M90-1147/RC
FO-91 TRANSISTOR package
at37271
TEKELEC AT37271
transistor scans sheet
JCA707
PXB16050U
Transistor Data chart
|
|
|
LM 886 IC chip
Abstract: TEKELEC te 358
Text: DISCRETE SEMICONDUCTORS BLV2045N UHF power transistor P relim inary specification Philips Sem iconductors 1998 O ct 01 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um te m perature
|
OCR Scan
|
PDF
|
BLV2045N
BLV2045N
OT39QA
LM 886 IC chip
TEKELEC te 358
|
NFM61RH20T332
Abstract: TEKELEC AT37271 AT37281 tekelec 630 transistor smd 4.z AT37271 capacitor variable BLV2045n capacitor variable ceramic NFM60R
Text: DISCRETE SEMICONDUCTORS E>^m SlnlEET BLV2045N UHF power transistor Preliminary specification Supersedes data of 1999 May 01 Philips Sem iconductors 2000 Feb 21 PHILIPS PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES
|
OCR Scan
|
PDF
|
BLV2045N
OT390A
OT39QA
SQT390A
NFM61RH20T332
TEKELEC AT37271
AT37281
tekelec 630
transistor smd 4.z
AT37271
capacitor variable
BLV2045n
capacitor variable ceramic
NFM60R
|
TRANSISTOR NPN 6822
Abstract: 4046 application note philips 6822 npn transistor 6822 D 1398 Transistor 22716 transistor transistor 3305 d 1556 transistor IEC134 LEE1015TA
Text: Philips Semiconductors Product specification -r ^ S > 3 -0 S > NPN silicon planar epitaxial microwave power transistor P H IL IP S INTERNATIONAL LEE1015TA 711Q82b OÜMbnG T5T • P H I N SbE DESCRIPTION APPLICAT IO N S Diffused emitter ballasting resistors providing excellent
|
OCR Scan
|
PDF
|
LEE1015TA
711G82b
OT122
T-33-05
711002b
004b200
TRANSISTOR NPN 6822
4046 application note philips
6822 npn
transistor 6822
D 1398 Transistor
22716 transistor
transistor 3305
d 1556 transistor
IEC134
LEE1015TA
|
NFM61 SP
Abstract: tekelec TA 355 TEKELEC te 358
Text: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1998 Nov 19 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature
|
OCR Scan
|
PDF
|
BLV2045N
BLV2045N
OT39QA
SCA60
/printrun/ed/pp10
NFM61 SP
tekelec TA 355
TEKELEC te 358
|
atc100a101kp
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK REFERENCE DATA
|
OCR Scan
|
PDF
|
AT3-7271SL
ATC100A101kp50x
LC455
atc100a101kp
|
4046 application note philips
Abstract: transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134
Text: Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL LEE1015TA 7 iio a 2 b SbE oa4bnG t5t « p h i n DESCRIPTION APPLICATIO N S Diffused emitter ballasting resistors providing excellent
|
OCR Scan
|
PDF
|
OT122
LEE1015TA
711002b
004tnG
OT122
T-33-05
LEE1015TA
711Qfl2b
4046 application note philips
transistor 6822
TRANSISTOR NPN 6822
41413
transistor d 1556
1FT sot23-6
805 399-4
International Power Sources
marking 683 choke
IEC134
|
MBC725
Abstract: RX1214B130Y RX1214B80W SC15
Text: DISCRETE SEMICONDUCTORS RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer
|
OCR Scan
|
PDF
|
RX1214B80W;
RX1214B130Y
MBC725
RX1214B130Y
RX1214B80W
SC15
|
STT 433
Abstract: variable capacitor erie ceramic RX1214B170W Tekelec
Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium
|
OCR Scan
|
PDF
|
RX1214B170W
FO-91B.
71106Eb
STT 433
variable capacitor
erie ceramic
RX1214B170W
Tekelec
|
RX1214B170W
Abstract: SC15
Text: Philips Semiconductors Product specification Microwave power transistor FEA TU R ES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK R E F E R E N C E DATA
|
OCR Scan
|
PDF
|
RX1214B170W
MLC455
OT439A.
RX1214B170W
SC15
|
GL033
Abstract: capacitor feed-through
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cells allow an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
|
OCR Scan
|
PDF
|
OT439A
PXB16050U
AT-3-7271SL
GL033
capacitor feed-through
|