AS7C1 Search Results

AS7C1026C

Abstract: PCN-08
Contextual Info: Alliance Memory, Inc. 511 Taylor Way, San Carlos, CA 94070 TEL. 650 610-6800 FAX (650) 610-6800 Date: 08/08/08 PCN Tracking Number: PCN-083202 (AS7C1026C-) Product Change Notification Change Description: Describe highlights/features of product change This letter is to serve as a notification of a product change for Alliance Memory part number

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

Contextual Info: High Performance 128Kx8 C M O S SRAM p i AS7C1024 AS7C1024L 128Kx8 CM O S S RAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE1, CE2, OE inputs - 10/12/15/20/25/35 ns address access time

7C1025

Contextual Info: AS7C1025 AS7C31025 J l 5V/3.3V 128Kx8 CMOS SRAM Common I/O Features • O rganization: 1 3 1 ,0 7 2 w o rd s x 8 b i s • H jgh gpead - 1 0 / 1 2 / 1 5 / 2 0 nsad d ress access tin e - 3 / 3 / 4 / 5 n s o u tp u t enabie access tim. e • Low pow e rc o n s jm ption

as7c164-25pc

Abstract: 7C164-10
Contextual Info: AS7CNS4 AS7C164L Hitih-Perfornìanitì 8K xS CMOS SRAM & sV^'C KKx8 CMOS SRAM Common I/O IFEATURES Organization: 8,192 words x 8 bits Equal access and cycle times High speed - 10/12/15/20/25 ns address access time - 3/3/4/5/6 ns output enable access time

Contextual Info: High Performance 128KX8 CMOS SRAM AS7C1024 AS7C31024 128KX8 CMOS SRAM Features • Organization: 131,072 words x 8 bits • High speed - 1 0 / 1 2 / 1 5 / 2 0 / 2 5 ns address access time - 3 / 3 / 4 / 5 / 6 ns output enable access time • Low power consumption

Contextual Info: AS 7CÌÓ4 OCTOBER 1999 SV 8K*8 C M O S SRAM Features Low power consumption: STANDBY - 11 mW AS7C164 / max CMOS I/O 2.0Ydata retention Easy memory expansion with CE1, CE2, OE inputs TTL-compatible, three-state 1/ O 28-pin JEDBC standard package - 300 mil PDIP and SOJ

Contextual Info: Advance information •■ AS7C181026LL II 1.8V 64Kx 16 Intelliwatt'-' low power C M O S SRAM Features • • • • • O ptim ized design for battery operated portable systems Intelliw att active pow er reduction circuitry O rganization: 6 5 ,5 3 6 w ords X 16 bits

MA1019

Contextual Info: October 2001 Advance Information AS7C1025A AS7C31025A 5V/3.3V 128K X 8 CMOS SRAM Revolutionary pinout Features • • • • • AS7C1025A (5V version) AS7C31025A (3.3V version) Industrial and commercial temperatures Organization: 131,072 x 8 bits High speed

Contextual Info: March 2001 Advance Information AS7C1026A AS7C31026A 5V/3.3V 64K X 16 CMOS SRAM Features • Latest 6T 0.25u CMOS technology • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging

Contextual Info: $SULO##5333 $6:&4357 $6:&64357 8926169#45;.ð;#&026#65$0#+ YROXWLRQDU\#3LQRXW, HDWXUHV • AS7C1024 (5V version) • AS7C31024 (3.3V version) • Industrial and commercial temperatures • Organization: 131,072 words x 8 bits • High speed - 10/12/15/20 ns address access time

Contextual Info: May 2000 AS7C1025 AS7C31025 5V/3.3V 128Kx8 CMOS SRAM Revolutionary pinout Features • Low power consumption: STANDBY • AS7C1025 (5V version) • AS7C31025 (3.3V version) • Industrial and commercial temperatures • Organization: 131,072 words x 8 bits

12-BI

Contextual Info: May 2001 AS7C1026 AS7C31026 5V/3.3V 64Kx16 CMOS SRAM • Low power consumption: STANDBY - 28 mW AS7C1026 / max CMOS I/O - 18 mW (AS7C31026) / max CMOS I/O • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging

Contextual Info: March 2001 Advance Information AS7C1025A AS7C31025A 5V/3.3V 128K X 8 CMOS SRAM Revolutionary pinout • • • • • • Latest 6T 0.25u CMOS technology 2.0V data retention Easy memory expansion with CE, OE inputs Center power and ground TTL/LVTTL-compatible, three-state I/O

Collins Electronics

Abstract: lm 3751 AS7010 NT 407 F 0637 Z05 AS7C1024-20PC LR 3441 AS7C1024 AS7C31024 AS701024-12TJC
Contextual Info: H ig h P e r f o r m a n c e 128KX8 C M O S SR A M A AS7C1024 AS7C31024 128KX8 CMOS SRAM Features • Organization: 131,072 words x 8 bits • High speed - 1 0 / 1 2 / 1 5 / 2 0 / 2 5 ns address access time - 3 / 3 / 4 / 5 / 6 n s output enable access time

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

AS7C1026A

Abstract: AS7C1026A-10 AS7C31026A AS7C31026A-10
Contextual Info: May 2001 Advance Information AS7C1026A AS7C31026A 5V/3.3V 64K X 16 CMOS SRAM Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging • AS7C1026A 5V version

Contextual Info: NOVEMBER 2009 AS7C164A 8K X 8 BIT HIGH SPEED CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 12/15 ns Low power consumption: Operating current : 110/100/90/80mA TYP. Standby current : 1mA (TYP.) Single 5V power supply All inputs and outputs TTL compatible

AS7C1024-15TI

Abstract: AS7C1024 AS7C1024-10 AS7C1024-12 AS7C1024-15 AS7C1024-20 AS7C31024 AS7C31024-10 AS7C31024-12 AS7C31024-15
Contextual Info: November 2000 AS7C1024 AS7C31024 5V/3.3V 128Kx8 CMOS SRAM Evolutionary Pinout Features • 2.0V data retention • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages • AS7C1024 (5V version)

TAA 621

Abstract: MD 202 TAA 621 applications AS7C1026-15JC AS7C1026 AS7C31026 7C1026 AS7C31026-25JC AS7C1026-25JC J-Squared Technologies
Contextual Info: High Performance 64Kx16 CMOS SRAM AS7C1026 AS7C31026 64K×16 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 16 bits • High speed - 12/15/20/25 ns address access time - 6/8/10/12 ns output enable access time • Low power consumption

MD 202

Abstract: MW SW front END SW 3395 6V TAA 621 applications 13831 epos Electronics TAA 521 A TEXAS CT 306 AS7C1025 AS7C31025
Contextual Info: High Performance 128Kx8 CMOS SRAM AS7C1025 AS7C31025 128K×8 CMOS SRAM Common I/O Preliminary information Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption

Contextual Info: March 2004 AS7C1025B 5V 128K X 8 CMOS SRAM Center power and ground Features • JEDEC-standard packages - 32-pin, 300 mil SOJ - 32-pin, 400 mil SOJ • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA • Industrial and commercial temperatures

Contextual Info: NOVEMBER 2009 AS7C164A 8K X 8 BIT HIGH SPEED CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 12/15 ns Low power consumption: Operating current : 110/100/90/80mA TYP. Standby current : 1mA (TYP.) Single 5V power supply All inputs and outputs TTL compatible

Contextual Info: September 2006 Advance Information AS7C1025C 5V 128K X 8 CMOS SRAM Center power and ground Features • Industrial (-40o to 85oC) temperature. • Organization: 131,072 x 8 bits • High speed - 15 ns address access time - 6 ns output enable access time