A1t smd
Abstract: 3CAQ smd code A1t
Text: CYM1622 CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module F eatures F unctional D escription • High-density 1-megabit SRAM module T he CYM 1622 is a very high p erform ance 1-m egabit static R A M m odule organized as64K w ordsby 16 bits. T he m odule is con
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CYM1622
1622H
1622PV
--25C
--30C
--35C
A1t smd
3CAQ
smd code A1t
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1620H
Abstract: 3545C
Text: CYM1620 p y p p p c c SEMICONDUCTOR 64K X 16 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module The C Y M 1620 is a very high perform ance 1-m egabit static R A M m odule organized as64K w ords by 16 bits. T he m odule is con
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CYM1620
40-pin,
1620PD
--25C
1620H
--30C
--35MB
3545C
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Untitled
Abstract: No abstract text available
Text: 32Kx 32 EEPROM Module mosaic PUMA67E1001/A-90/12 Issue4.0: February 1996 semiconductor, inc. Description ThePUMA67E1001/AisalMbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of90and 120 ns are available.Theoutputwidth is
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PUMA67E1001/A-90/12
ThePUMA67E1001/AisalMbitCMOS
of90and
MIL-STD-883orD0
MIL-STD-883
32Kx32
as64Kx
16and
128Kx8
PUMA67
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32KX8
Abstract: HD03 ZL53
Text: CYM1620 CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module • High-speed CM OS SRAMs — Access tim e o f 20 ns The CYM1620 is a veiy high performance 1-megabit static RAM module organized
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CYM1620
40-pin,
16bits.
Outg-15
Ins-15
CYM1620PD-20C
CYM1620PDâ
CYM1620HDâ
CYM1620PD-30C
32KX8
HD03
ZL53
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Untitled
Abstract: No abstract text available
Text: MXIC 51 2K -B ITI64K x 8 ] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • M X26C 512A 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns
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ITI64K
100juA
MX26C512A
512K-bit,
as64K
PM0455
X26C512A
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5225M
Abstract: SOJ28
Text: LH52253 FEATURES • Fast Access Times: 20/25/35 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation C M O S 64K x 4 Static R A M The LH52253 offers an Output Enable G for use in managing the Data Bus. Bus contention _during Write
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LH52253
28-Pin,
300-mil
LH52253
256K-bit
as64Kx
LH52253.
5225M
SOJ28
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sRAM 2116
Abstract: 2116 ram memory sram
Text: Q S86444, Ô Q S86449 High-Speed CMOS 64Kx4 SRAM with Separate I/O Q S86444 Q S86449 ADVANCE INFORM ATIO N F E A TU R E S /B E N E FIT S • • • • • High Speed Access and Cycle times 15ns/20ns/25ns Commercial 20ns/25ns/35ns Military TTL compatible I/O
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QS86444,
QS86449
64Kx4
QS86444
QS86449
15ns/20ns/25ns
20ns/25ns/35ns
28-pin
MIL-STD-883
sRAM 2116
2116 ram
memory sram
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