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    APT80GA90S Search Results

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    APT80GA90S Price and Stock

    Microchip Technology Inc APT80GA90S

    IGBT PT 900V 145A D3PAK
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    DigiKey APT80GA90S Tube 154 1
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    Avnet Americas APT80GA90S Tube 26 Weeks 50
    • 1 $11.94
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    Mouser Electronics APT80GA90S
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    Newark APT80GA90S Bulk 50
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    Future Electronics APT80GA90S 50
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    Microchip Technology Inc APT80GA90S
    • 1 $11.94
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    Onlinecomponents.com APT80GA90S
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    • 1000 $9.31
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    TME APT80GA90S 1
    • 1 $17.31
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    NAC APT80GA90S Tube 32
    • 1 $11.43
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    • 100 $10.36
    • 1000 $9.48
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    Richardson RFPD APT80GA90S 50
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    Avnet Silica APT80GA90S 28 Weeks 50
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    EBV Elektronik APT80GA90S 27 Weeks 50
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    Master Electronics APT80GA90S
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    • 10 $11.6
    • 100 $9.84
    • 1000 $9.31
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    APT80GA90S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT80GA90S Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 80; Original PDF

    APT80GA90S Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: APT80GA90B APT80GA90S 900V High Speed PT IGBT T OPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT80GA90B APT80GA90S

    APT80GA90S

    Abstract: APT80GA90B MIC4452
    Text: APT80GA90B APT80GA90S 900V High Speed PT IGBT T OPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT80GA90B APT80GA90S APT80GA90S APT80GA90B MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT80GA90B APT80GA90S 900V High Speed PT IGBT T OPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT80GA90B APT80GA90S switc16)