APT8018L2VFR
Abstract: No abstract text available
Text: APT8018L2VFR 800V 43A POWER MOS V FREDFET 0.180Ω L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8018L2VFR
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APT8018L2VFR
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Untitled
Abstract: No abstract text available
Text: ADVANCED PO W ER a Te c h n o l o g y APT8018JN ISOTOP' POWER MOS IV® 800V 40A 0.18Í2 S Ù " U L DIE Recognized" File No. E145592 S SINGLE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.
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APT8018JN
E145592
8018JN
OT-227
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Untitled
Abstract: No abstract text available
Text: O A d van ced po w er Te c h n o l o g y D APT8018JN As 800V 40A 0.18Q 5 M " U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd All Ratings: Tc = 25°C unless otherwise specified.
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APT8018JN
E145592
8018JN
OT-227
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Untitled
Abstract: No abstract text available
Text: ADVANCED P ow er Te c h n o l o g y APT8018JNFR ISOTOP* 800V 40A 0.18 S û "UL Recognized" File No. E145592 S POWER MOS IV( AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25 C unless otherwise specified.
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APT8018JNFR
E145592
APT8018JNFR
OT-227
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APT8018JNFR
Abstract: No abstract text available
Text: A d va n ced P o w er Te c h n o l o g y APT8018JNFR 800V 40A 0.18£2 ISOTOP S M "UL Recognized" File No. E145592 S POWER MOS IVe AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS 'd ’dm V GS
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APT8018JNFR
E145592
OT-227
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Untitled
Abstract: No abstract text available
Text: A dvanced POWER Te c h n o l o g y ' APT8018JNFR 800V 40A 0.180 ISOTOP* J Ü I "UL Recognized" File No. E145592 S POWER MOS IVe A V A L A N C H E R A TED F R E D F E T N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol Parameter
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APT8018JNFR
E145592
00A/HS,
OT-227
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Untitled
Abstract: No abstract text available
Text: APT8018L2VFR 800V 43A 0.180W POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8018L2VFR
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O-264
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Untitled
Abstract: No abstract text available
Text: APT8018L2VFR 0.180Ω 800V 43A POWER MOS V FREDFET L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8018L2VFR
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O-264
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Untitled
Abstract: No abstract text available
Text: APT8018L2VR 0.180Ω 800V 43A POWER MOS V MOSFET L2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8018L2VR
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O-264
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APT8018L2VR
Abstract: No abstract text available
Text: APT8018L2VR 800V 43A POWER MOS V MOSFET 0.180Ω L2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8018L2VR
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O-264
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Abstract: No abstract text available
Text: APT8018L2VR 800V 43A 0.180W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8018L2VR
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O-264
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y APT8018JN 800V 40A 0.180 "UL Recognized" File No. E145592 S ISOTOP* POWER MOS IVe 157* i N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D All Ratings: Tc = 25 °C unless otherwise specified.
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APT8018JN
E145592
8018JN
OT-227
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APT8018JN
Abstract: TL 160
Text: S S D D G G 27 2 T- SO APT8018JN S 800V 0.18Ω 40A "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.
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APT8018JN
E145592
8018JN
Juncti11
APT8018JN
TL 160
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400vpf
Abstract: APT8018L2VR
Text: APT8018L2VR 800V 43A POWER MOS V MOSFET 0.240Ω L2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8018L2VR
O-264
O-264
400vpf
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT10026JN
apt1004rbn
APT10050JN
FREDFETs
APT8030jn
APT4020BN
APT5010LVFR
APT5014LVR
arf444
APT10M09LVR
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APT802R4KN
Abstract: APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet APT10M13JNR R6KN
Text: APT PLASTIC PACKAGE MOSFET/FREDFET PRODUCTS BV DSS Volts 400 R ds ° n Ohms lD(Cont.) Amps PD Ciss(pF) Watts Typ Qg(nC) Typ APT Part No. APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR LOW Ros(ON) LOW Ros(ON) UIS RATED
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APT4016BN
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APT4018BNR
APT4020BN
APT4025BN
APT4020BNR
APT4025BNR
APT10M13JNR
APT10M15JNR
APT802R4KN
APT10050JN
lf 3560
FREDFET
APT5010JN
APT8018
APT4065BN
690 mosfet
R6KN
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apt20m25jnr
Abstract: apt20m25
Text: W UAAdvanced PT rn ow er tiu n t nirr Table of Contents • • • • • • • • ISOTOP® Products Product Selector Guide Features/Benefits Product Datasheets US and Canadian Representative Sales Offices US and Canadian Distributor Sales Offices International Representative and Distributor Sales Offices
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APT10M13JNR
APT20M25JNR
APT30M45JNR
APT40M75JN
APT40M42JN
APT5010JN
APT50M60JN
APT6015JN
APT60M90JN
APT8030JNFR
apt20m25
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mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as
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APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of
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APT8030JN
Abstract: apt20m25jnr APT8018JNFR apt10050jn APT5012 apt5010jn
Text: w!Zá A d vanced POW ER TE€2HN0L0GY' APT Product Selector Guide Rds ON (ohms) (watts) (amperes) 100 0.013 520 150 APT10M13JNR+ 4-7 200 0.025 520 100 APT20M25JNR+ 8-11 300 0.045 520 70 APT30M45JNR+ 12-15 400 0.075 0.042 520 690 56 86 APT40M75JN APT40M42JN
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APT10M13JNR+
APT20M25JNR+
APT30M45JNR+
APT40M75JN
APT40M42JN
APT5010JN
APT5012JNU2*
APT5012JNU3*
APT50M60JN
APT6015JN
APT8030JN
apt20m25jnr
APT8018JNFR
apt10050jn
APT5012
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Untitled
Abstract: No abstract text available
Text: IS0T0P* "UL Recognized" File No. E145592 S POWER MOS IV AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS *d ’d m V GS V GSM PD t j ,t s t g All Ratings: Tc = 25°C unless otherwise specified.
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E145592
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