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    APT68GA60B Search Results

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    APT68GA60B Price and Stock

    Microchip Technology Inc APT68GA60B2D40

    IGBT PT 600V 121A
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    DigiKey APT68GA60B2D40 Tube 50
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    Avnet Americas APT68GA60B2D40 Tube 26 Weeks 50
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    Mouser Electronics APT68GA60B2D40
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    Newark APT68GA60B2D40 Bulk 50
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    Microchip Technology Inc APT68GA60B2D40 Tube 26 Weeks
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    TME APT68GA60B2D40 1
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    NAC APT68GA60B2D40 Tube 34
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    Microchip Technology Inc APT68GA60B

    High Speed PT IGBT N-Channel 600V 121A 3-Pin TO-247 - Rail/Tube (Alt: APT68GA60B)
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    Avnet Americas APT68GA60B Tube 26 Weeks 70
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    Mouser Electronics APT68GA60B
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    Newark APT68GA60B Bulk 70
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    Future Electronics APT68GA60B 70
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    Microchip Technology Inc APT68GA60B Tube 26 Weeks
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    Onlinecomponents.com APT68GA60B
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    Quest Components APT68GA60B 24
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    TME APT68GA60B 1
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    NAC APT68GA60B Tube 47
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    Master Electronics APT68GA60B
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    APT68GA60B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT68GA60B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 68; Original PDF
    APT68GA60B2D40 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 68; Original PDF

    APT68GA60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT68GA60B

    Abstract: APT68GA60S MIC4452
    Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60B APT68GA60S APT68GA60B APT68GA60S MIC4452

    400v 20A ultra fast recovery diode

    Abstract: TO-264 Jedec package outline 80A bridge rectifier APT40GT60BR APT68GA60B2D40 APT68GA60LD40 MIC4452
    Text: APT68GA60B2D40 APT68GA60LD40 600V APT68GA60B2D40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60B2D40 APT68GA60LD40 400v 20A ultra fast recovery diode TO-264 Jedec package outline 80A bridge rectifier APT40GT60BR APT68GA60B2D40 APT68GA60LD40 MIC4452

    100c1a

    Abstract: No abstract text available
    Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60B APT68GA60S APT68GA60S 100c1a

    APT68GA60LD40

    Abstract: MIC4452 APT68GA60B2D40
    Text: APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60LD40 APT68GA60B2D40 APT68GA60LD40 MIC4452 APT68GA60B2D40

    Untitled

    Abstract: No abstract text available
    Text: APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60LD40 APT68GA60B2D40 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60B APT68GA60S switchin51

    APT68GA60B

    Abstract: No abstract text available
    Text: APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60LD40 APT68GA60B2D40 APT68GA60LD40 APT68GA60B2D40 O-247 APT68GA60B

    APT68GA60B

    Abstract: MIC4452 IGBT microsemi
    Text: APT68GA60B 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60B APT68GA60B MIC4452 IGBT microsemi

    Untitled

    Abstract: No abstract text available
    Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60B APT68GA60S APT68GA60S

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original     		PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301