APT60DF60 Search Results

Contextual Info: APT60DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~        

Contextual Info: APT60DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • +

Contextual Info: APT60M75JFLL 600V POWER MOS 7 R 58A FREDFET 0.075Ω S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT60M60JFLL 600V 70A 0.060Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

400V 70A power mosfet

Contextual Info: APT60M60JLL 800V 70A 0.060Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT50M75B2LL

Abstract: APT50M75LLL ic power mosfet 100V 57A
Contextual Info: APT50M75B2LL APT50M75LLL 500V 57A 0.075Ω R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT50M60JVFR 0.060Ω 500V 63A POWER MOS V FREDFET S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT80GP60J

Contextual Info: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

APT50M60JVFR

Contextual Info: APT50M60JVFR 500V 63A POWER MOS V FREDFET 0.060Ω S S 27 2 T- D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M65JFLL 500V R POWER MOS 7 0.065Ω 58A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT50M50L2FLL 500V 89A 0.050Ω R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT50M65B2LL APT50M65LLL 500V 67A 0.065Ω R POWER MOS 7 MOSFET B2LL T-MaxTM Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT50M60L2VFR 500V 0.060Ω 77A POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

power mosfet 600v 29a

Contextual Info: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT60M75L2LL

Abstract: 0236f
Contextual Info: APT60M75L2LL 600V 73A 0.075Ω POWER MOS 7 R MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT55M50JFLL

Contextual Info: APT55M50JFLL 550V POWER MOS 7 R FREDFET VDSS ID S 27 2 T- D G SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.050Ω S Power MOS 7 is a new generation of low loss, high voltage, N-Channel

Contextual Info: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V MOSFET L2VR TO-264 Max V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V MOSFET L2VR TO-264 Max V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT80GP60B2

Contextual Info: APT80GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT60DF60

Abstract: APT50M38JLL
Contextual Info: APT50M38JLL 500V 88A 0.038Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT50M75B2LL

Abstract: APT50M75LLL
Contextual Info: APT50M75B2LL APT50M75LLL 500V 57A 0.075Ω POWER MOS 7 R MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT50M60L2VR

Abstract: 77A DIODE
Contextual Info: APT50M60L2VR 500V 77A 0.060Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT50M50JLL

Abstract: diode 71A
Contextual Info: APT50M50JLL 500V 71A 0.050Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON