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    APT5020BN Search Results

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    Microchip Technology Inc APT5020BN

    MOSFET N-CH 500V 28A TO247AD
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    DigiKey APT5020BN Tube
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    Microchip Technology Inc APT5020BNFR

    MOSFET N-CH 500V 28A TO247AD
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    Microchip Technology Inc APT5020BNRG

    MOSFET MOS 4 Rugged 500 V 200 mOhm TO-247, Projected EOL: 2044-04-30
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    Microchip Technology Inc APT5020BNRG 20 Weeks
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    Advanced Power Technology APT5020BNX

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    Quest Components APT5020BNX 4
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    Microchip Technology Inc APT5020BNG

    POWER MOSFET TRANSISTOR
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    Richardson RFPD APT5020BNG 1
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    APT5020BN Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT5020BN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT5020BN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 28A TO247AD Original PDF
    APT5020BNF Advanced Power Technology Power MOS IV Scan PDF
    APT5020BNFR Advanced Power Technology Power MOS IV Scan PDF
    APT5020BNR Advanced Power Technology Power MOS IV Scan PDF

    APT5020BN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5020BN

    Abstract: 5022BN APT5020BN 5020B APT5022BN APTS022BN APT 5020BN
    Text: A dvanced P o w er Tec h n o lo g y O D O s POWER MOS IV' APT5020BN 500V 28.0A 0.20U APT5022BN 500V 27.0A 0.220 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 5020BN APT 5022BN


    OCR Scan     		APT5020BN APT5022BN 5020BN 5022BN APT5020/5022BN O-247AD 5020B APTS022BN APT 5020BN PDF

    APT5020BNR

    Abstract: APT5022BNR
    Text: O D O S A d va n ced P o w er Te c h n o l o g y * APT5020BNR APT5022BNR POWER MOS IV‘ 500V 28.0A 0.2011 500V 27.0A 0.22£i AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol V DSS 'd ' dm VGS V GSM PD


    OCR Scan     		APT5020BNR APT5022BNR O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o lo g y • APT5020BNFR APT5022BNFR POWER MOS IV< 500V 500V 28A 0.20Q 27A 0.220 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		APT5020BNFR APT5022BNFR APT502Q/5022BNFR 0Q01473 PDF

    APT5020BNR

    Abstract: No abstract text available
    Text: A dvanced ro w er Te c h n o l o g y APT5020BNR 500V 28.0A 0.2012 APT5022BNR 500V 27.0A 0.2212 O D O S lib 'W tR m o s m AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		APT5020BNR APT5022BNR APT5020/5022BNR O-247AD PDF

    2091J

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y O D APT5020BNR 500V 28.0A 0.200 APT5022BNR 500V 27.0A 0.22Q O S POWER MOS IVe AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		APT5020BNR APT5022BNR APT5020BNR APT5022BNR Jun022BNR O-247AD DDD1H77 2091J PDF

    APT5022BNFR

    Abstract: APT5020BNFR 5022BNF
    Text: ADVANCED POWER Te c h n o l o g y APT5020BNFR APT5022BNFR POWER MOS IV® 500V 500V 28A 27A 0.20Q 0.22Í2 AVALANCHE RATED FREDFET N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		APT5020BNFR APT5022BNFR O-247AD 5022BNF PDF

    APT5022BNFR

    Abstract: APT5020BNFR APT5020 sv 4380 DDD1470 5022BN 5022B
    Text: A d van ced P o w er T e c h n o l o g yr APT5020BNFR APT5022BNFR POWER MOS IV' 500V 500V 28A 0.20Í2 27A 0.22Q AVALANCHE RATED FREDFET N-C H A NN EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS 'd *DM V GS V GSM Parameter TJ’"I STG


    OCR Scan     		APT5020BNFR APT5022BNFR APT5020BNFR APT5022BNFR O-247AD APT5020 sv 4380 DDD1470 5022BN 5022B PDF

    5020bn

    Abstract: APT5020BN 5020B APT 5020BN APT5022BN N mos 100v 100A
    Text: D TO-247 G S POWER MOS IV APT5020BN 500V 28.0A 0.20Ω APT5022BN 500V 27.0A 0.22Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original     		O-247 APT5020BN APT5022BN 5020BN 5022BN O-247AD 5020bn 5020B APT 5020BN N mos 100v 100A PDF

    zvt boost converter

    Abstract: uc3855 Application Note D4602 500w power amplifier circuit diagram schematic 500w power amplifier circuit diagram SATURABLE CORE Saturable Core Square Wave Oscillator SEM-400 95160 UC3855 8 pin
    Text: U-153 UNITRODE CORPORATION UC3855A/B HIGH PERFORMANCE POWER FACTOR PREREGULATOR James P. Noon New Product Applications Engineer INTRODUCTION The trend in power converters is towards increasingly higher power densities. Usually, the method to achieve this is to increase the switching frequency,


    Original     		U-153 UC3855A/B 100kHz. zvt boost converter uc3855 Application Note D4602 500w power amplifier circuit diagram schematic 500w power amplifier circuit diagram SATURABLE CORE Saturable Core Square Wave Oscillator SEM-400 95160 UC3855 8 pin PDF

    APT*1002R4BN

    Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
    Text: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0


    OCR Scan     		O-247 APT1001RBN APT1001R1BN APT1001RBNR APT1001R1BNR APT1001R3BN APT1001R6BN APT1002RBN APT1002R4BN APT1002RBNR APT*1002R4BN APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF PDF

    Untitled

    Abstract: No abstract text available
    Text: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =


    OCR Scan     		APT4020BNR APT4025BNR APT4030BNR APT4040BNR APT4065BNR APT4080BNR APT5020BNR APT5022BNR APT5025BNR APT5027BNR PDF

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original     		AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR PDF

    APT5085BN

    Abstract: APT4065BN APT6045BNR APT5027BN APT501R1BN APT4025BNR APT4030BNR APT4065BNR APT4080BNR APT5022BNR
    Text: A D VANCFD P OU FR TECHNOLOGY AD VANCED MIE I> 0257^0^ 0000fci3c? 17b 'T -V A -\'y P o w er Te c h n o l o g y IA VP 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = APT TO-247 SINGLE PULSE UIS RATED POWER MOSFETs =


    OCR Scan     		0000fci3c? O-247 APT4020BNR APT4025BNR APT4030BNR APT4040BNR APT4065BNR APT4080BNR APT5020BNR APT5022BNR APT5085BN APT4065BN APT6045BNR APT5027BN APT501R1BN PDF

    zvt boost converter

    Abstract: uc3855 Application Note SATURABLE CORE APT5020BN flyback transformer toshiba tv Design equations of high-power-factor flyback ZVT technique Unitrode Power Supply Design UC3855 8 pin saturable core oscillator
    Text: U-153 UNITRODE CORPORATION UC3855A/B HIGH PERFORMANCE POWER FACTOR PREREGULATOR James P. Noon New Product Applications Engineer INTRODUCTION The trend in power converters is towards increasingly higher power densities. Usually, the method to achieve this is to increase the switching frequency,


    Original     		U-153 UC3855A/B 100kHz. zvt boost converter uc3855 Application Note SATURABLE CORE APT5020BN flyback transformer toshiba tv Design equations of high-power-factor flyback ZVT technique Unitrode Power Supply Design UC3855 8 pin saturable core oscillator PDF

    APT9302

    Abstract: mosfet discrete totem pole drive CIRCUIT mosfet discrete totem pole CIRCUIT mosfet power totem pole CIRCUIT APT50M60JN APT5020BN MIC4429 MIC4451 UC3708 UC3710
    Text: APPLICATION NOTE APT9302 By: Kenneth Dierberger GATE DRIVE DESIGN FOR LARGE DIE MOSFETS Presented at PCIM '93 USA Presents design rules for proper design and layout of gate drive circuitry. 1 APT9302 GATE DRIVE DESIGN FOR LARGE DIE MOSFETS Kenneth Dierberger


    Original     		APT9302 APT9302 mosfet discrete totem pole drive CIRCUIT mosfet discrete totem pole CIRCUIT mosfet power totem pole CIRCUIT APT50M60JN APT5020BN MIC4429 MIC4451 UC3708 UC3710 PDF

    500 Watt Phase Shifted ZVT Power Converter

    Abstract: ZVT full bridge pwm controller uc3875 Designing a Phase Shifted Zero Voltage Transition ZVT Power Converter uc3875 application pfc ZVT uc3875 SEM900 APT9703 MKT .33K ZVT full bridge pwm controller phase shifted zero voltage
    Text: APPLICATION NOTE APT9703 By: Ken Dierberger A New Generation of Power MOSFET Offers Inproved Performance at Reduced Cost 1 A New Generation Of Power MOSFETs Offers Improved Performance At Reduced Cost Ken Dierberger Application Engineering Manager Advanced Power Technology Inc.


    Original     		APT9703 500 Watt Phase Shifted ZVT Power Converter ZVT full bridge pwm controller uc3875 Designing a Phase Shifted Zero Voltage Transition ZVT Power Converter uc3875 application pfc ZVT uc3875 SEM900 APT9703 MKT .33K ZVT full bridge pwm controller phase shifted zero voltage PDF