APT45 Search Results

Contextual Info: APT45GR65BSCD10 APT45GR65BSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and

Contextual Info: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN

transistor GC cd

Contextual Info: A DV A NC ED POWER TECHNOLOGY b lE 0 2 S 7 ti D ,i D GDODflbb 310 HAVP ADVANCED PO W ER Te c h n o lo g y APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

Contextual Info: APT45GR65B APT45GR65B 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses.

APT45GL100BN

Abstract: 10A fast Gate Turn-off Thyristor
Contextual Info: A D V A NC ED POWER TECHNOLOGY b lE OZSTSCm D OOOOèbb 310 HAVP A D V A N C ED PO W ER Te c h n o l o g y • APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

Contextual Info: APT45GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT45G100BN

Abstract: i287
Contextual Info: ADVANCED POUER TECHNOLOGY blE D • GSST'lD'l GOGGfl'î'î flb? ■ AVP ADVANCED PO W ER Te c h n o l o g y APT45G100BN P O W E R M O S 1000V 45A IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

BAVP

Abstract: APT5085/501R1BN
Contextual Info: AD VA N C E D PO WE R T E C H N O L O G Y blE D 0 2 37 ^0 ^ 0000 7^ 7 DD3 IAVP ADVANCED P o w er Te c h n o l o g y 9 O D O s ,1 »TM POWER MOS IV APT5085GN APT4585GN APT501R1GN APT451R1GN 500V 7.0A 0.85Q 450V 7.0A 0.85Q 500V 6.5A 1.10Q 450V 6.5A 1.10ß

Contextual Info: APT45GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

AN 780a

Abstract: APT45M60BFN APT50M60BFN y381 MC 78 M 05 CG 45M60
Contextual Info: ADVANCED POWER TECHNOLOGY W1 MTE ' D ^ • DESTTCH 4bb ■ AVP : A dvanced W jM ROWER T -3 A -IS 'co ^ ta 000D5Bb ZéÊk T e c h n o l o g y _ APT50M60BFN 500V 78.0A 0.060 W APT45M60BFN 450V 78.0A 0.060 Î Ï POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

5025bn

Abstract: APT5025BN apt4525bn apt4530bn 4525BN apt5025 025Q
Contextual Info: A d van ced P o w er Te c h n o l o g y O D APT5025BN APT4525BN APT5030BN APT4530BN Ô S H? WER MOS IV'03 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Í2 0.30Q 0.30Q N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS

IC 7431 datasheet

Abstract: 185F APT45GP120B2DF2 800V16A
Contextual Info: APT45GP120B2DF2 APT45GP120B2DF2 TYPICAL PERFORMANCE CURVES 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

5085AN

Abstract: APT5085AN 4585AN 451R1
Contextual Info: ADVANCED POlilFR T E C H N O L O G Y 4TE D D E S 7 ci a t1 G G DO Hb f i POWER MOS IV IAVP ADVANCED POWER Te c h n o lo g y O D O s SbT APT5085AN APT4585AN APT501R1AN APT451R1AN 500V 450V 500V 450V 8.5A 8.5A 7.5A 7.5A 0.85 0.85 1.10 1.10 n CI Q n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

225A2

Contextual Info: APT45GP120J 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

3000 0442

Abstract: 7433 APT10035LLL APT45GP120B2DQ2 APT45GP120B2DQ2G
Contextual Info: APT45GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

APT45G100BN

Contextual Info: ADVANCED POIdER T E C H N O L O G Y bl E □ 2 5 7 ^ 0*1 OOOOfl'i'ï flb? D A d van ced po w er Tec h n o lo g y * APT45G100BN 1000V 45A POWER MOS IV IGBT N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

APT5085BN

Contextual Info: O D O S A d van ced R o w er Te c h n o l o g y APT5085BN APT4585BN APT501R1BN APT451R1BN POWER MOS IV 500V 450V 500V 450V 9.5A 9.5A 9.0A 9.0A 0.85Q 0.85Q 1.10Q 1.10Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S All R atin g s : T c = 2 5 ° C u n les s o th e rw is e sp ecified .

Contextual Info: APT4540BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)16 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)240 Minimum Operating Temp (øC)

APT POWER FET

Abstract: APT110GF60JN APT65GL100BN APT25GF100BN APT30GF60BN APT45GL100BN IGBT SCHEMATIC IGBT 1500 volts APT35GL60BN IGBT 1000 VOLTS TO 1500 VOLTS
Contextual Info: APT IGBT PRODUCTS BVces V ce ON lc,(25C ) lC2(90°C) tf(IND@125 C) Pd APT New Product Volts Volts Amps Amps nsec Watts Part No. Comments LOW CONDUCTION LOSS IGBT PRODUCT FAMILY 1000 2.8 3.0 3.0 65 45 30 35 25 17 1500 1500 1500 260 200 147 APT65GL100BN APT45GL100BN

APT4540BN

Abstract: 5040bn apt5040
Contextual Info: ADVANCED PO W ER T e c h n o lo g y 9 O D APT5040BN APT4540BN APT5050BN APT4550BN Ô s POWER MOS IV 500V 450V 500V 450V 16.0A 16.0A 14.0A 14.0A 0.40Q 0.40Q 0.50Q 0.50Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.

APT45GP120B

Abstract: T0-247
Contextual Info: APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT45G

Contextual Info: APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT45GP120J 1200V The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.