APT30GP60B Search Results

APT30GP60BDF1

Contextual Info: TYPICAL PERFORMANCE CURVES APT30GP60BDF1 APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

Contextual Info: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

30GP60BDF1

Contextual Info: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

Abstract: data sheet IC 7450 APT30GP60BSC T0-247 APT10SC60
Contextual Info: TYPICAL PREFORMANCE CURVES APT30GP60BSC APT30GP60BSC 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

7400 IC

Abstract: data sheet IC 7400 IC 7400 IC 7400 data sheet tl 7400 APT30GP60B APT30GP60S
Contextual Info: APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

7400 IC

Abstract: APT30GP60B tl 7400 T0-247
Contextual Info: APT30GP60B 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

APT30GP60B

Abstract: T0-247 T0247 package
Contextual Info: APT30GP60B 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

Contextual Info: APT30GP60B2DL G APT30GP60LDL(G) 600V, 30A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high

APT30GP60BDQ1G

Contextual Info: APT30GP60BDQ1 G 600V TYPICAL PERFORMANCE CURVES APT30GP60BDQ1 APT30GP60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

30GP60BDF1

Abstract: 30GP
Contextual Info: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

Contextual Info: APT30GP60B 600V Mos 7™ Ultra Fast IGBT The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT30GP60B 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

IC 7400

Abstract: APT30GP60B APT30GP60S
Contextual Info: APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

APT30GP60LDL

Contextual Info: APT30GP60B2DL G APT30GP60LDL(G) 600V, 30A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high

APT30GP60LDL

Abstract: APT30GS60BRDL 600V30A APT30GP60B2DLG
Contextual Info: APT30GP60B2DL G APT30GP60LDL(G) 600V, 30A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high

APT30GP60BDQ1G

Abstract: APT30GP60BDQ1
Contextual Info: APT30GP60BDQ1 G 600V TYPICAL PERFORMANCE CURVES APT30GP60BDQ1 APT30GP60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

Contextual Info: APT30GP60BDQ1 G 600V TYPICAL PERFORMANCE CURVES APT30GP60BDQ1 APT30GP60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

APT30GP60BD1

Abstract: T0-247 30A 600V Ultrafast Diode APT TO-247 NS6006
Contextual Info: APT30GP60BD1 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

Contextual Info: APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT TO A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

APT30GP60BDF1

Contextual Info: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

APT0201

Abstract: APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross
Contextual Info: Application Note APT0302 Rev. A April 4, 2003 Latest Technology PT IGBTs vs. Power MOSFETs Jonathan Dodge, P.E. Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 USA Based on a paper presented at PCIM China 2003

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

catalog mosfet Transistor smd

Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Contextual Info: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance