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    Microsemi Corporation APT30GN60SDQ2G

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    APT30GN60SDQ2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30GN60SDQ2G
    		Microsemi Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 600; VCE(sat) (V): 1.9; IC (A): 37; Original PDF

    APT30GN60SDQ2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TYPICAL PERFORMANCE CURVES APT30GN60BDQ2 APT30GN60BD_SDQ2 G APT30GN60SDQ2 APT30GN60BDQ2(G) APT30GN60SDQ2(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum


    Original     		APT30GN60BDQ2 APT30GN60BD APT30GN60SDQ2 APT30GN60SDQ2 PDF

    APT30GN60BDQ2

    Abstract: MIC4452 IGBT 600V 200A
    Contextual Info: TYPICAL PERFORMANCE CURVES APT30GN60BDQ2 APT30GN60BD_SDQ2 G APT30GN60SDQ2 APT30GN60BDQ2(G) APT30GN60SDQ2(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum


    Original     		APT30GN60BDQ2 APT30GN60BD APT30GN60SDQ2 APT30GN60SDQ2 MIC4452 IGBT 600V 200A PDF