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    APT100GT60JRDL Search Results

    APT100GT60JRDL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT100GT60JRDL Microsemi Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 80; Original PDF

    APT100GT60JRDL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT10035LLL

    Abstract: APT100GT60JRDL
    Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDL 50KHz E145592 APT10035LLL APT100GT60JRDL

    Thunderbolt IGBT

    Abstract: APT10035LLL APT100GT60JRDL
    Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDL 50KHz E145592 Thunderbolt IGBT APT10035LLL APT100GT60JRDL

    Untitled

    Abstract: No abstract text available
    Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDL 50KHz E145592

    Untitled

    Abstract: No abstract text available
    Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDL E145592 50KHz

    Untitled

    Abstract: No abstract text available
    Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60JRDL 50KHz E145592

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit