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    APT10025 Search Results

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    APT10025 Price and Stock

    Microchip Technology Inc APT10025JVR

    MOSFET N-CH 1000V 34A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT10025JVR Tube 10 1
    • 1 $86.5
    • 10 $86.5
    • 100 $70.225
    • 1000 $70.225
    • 10000 $70.225
    		Buy Now
    Avnet Americas APT10025JVR Tube 26 Weeks 10
    • 1 $75.6168
    • 10 $75.6168
    • 100 $68.46938
    • 1000 $70.49818
    • 10000 $70.49818
    		Buy Now
    Mouser Electronics APT10025JVR 46
    • 1 $86.49
    • 10 $83.96
    • 100 $70.22
    • 1000 $70.22
    • 10000 $70.22
    		Buy Now
    Newark APT10025JVR Bulk 10
    • 1 $86.5
    • 10 $86.5
    • 100 $74.72
    • 1000 $70.2
    • 10000 $70.2
    		Buy Now
    Microchip Technology Inc APT10025JVR Tube 26 Weeks
    • 1 $86.5
    • 10 $86.5
    • 100 $74.72
    • 1000 $68.53
    • 10000 $66.29
    		Buy Now
    Onlinecomponents.com APT10025JVR
    • 1 -
    • 10 $72.26
    • 100 $72.26
    • 1000 $72.26
    • 10000 $72.26
    		Buy Now
    TME APT10025JVR 1
    • 1 $125.08
    • 10 $99.47
    • 100 $99.47
    • 1000 $99.47
    • 10000 $99.47
    		Get Quote
    NAC APT10025JVR Tube 4
    • 1 $80.26
    • 10 $80.26
    • 100 $73.92
    • 1000 $68.51
    • 10000 $68.51
    		Buy Now
    Richardson RFPD APT10025JVR 50 1
    • 1 $77.16
    • 10 $77.16
    • 100 $74.19
    • 1000 $74.19
    • 10000 $74.19
    		Buy Now
    Master Electronics APT10025JVR
    • 1 -
    • 10 $72.26
    • 100 $72.26
    • 1000 $72.26
    • 10000 $72.26
    		Buy Now

    Microchip Technology Inc APT10025JVFR

    MOSFET N-CH 1000V 34A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT10025JVFR Tube 10
    • 1 -
    • 10 $91.711
    • 100 $91.711
    • 1000 $91.711
    • 10000 $91.711
    		Buy Now
    Avnet Americas APT10025JVFR Tube 32 Weeks 10
    • 1 $89.8758
    • 10 $89.8758
    • 100 $74.685
    • 1000 $74.72707
    • 10000 $74.72707
    		Buy Now
    Mouser Electronics APT10025JVFR
    • 1 -
    • 10 $91.71
    • 100 $91.71
    • 1000 $91.71
    • 10000 $91.71
    		Get Quote
    Newark APT10025JVFR Bulk 10
    • 1 $91.71
    • 10 $91.71
    • 100 $79.2
    • 1000 $74.43
    • 10000 $74.43
    		Buy Now
    Microchip Technology Inc APT10025JVFR Tube 32 Weeks
    • 1 $91.71
    • 10 $91.71
    • 100 $79.2
    • 1000 $72.66
    • 10000 $70.27
    		Buy Now
    Onlinecomponents.com APT10025JVFR
    • 1 -
    • 10 $76.6
    • 100 $76.6
    • 1000 $76.6
    • 10000 $76.6
    		Buy Now
    TME APT10025JVFR 1
    • 1 $132.58
    • 10 $105.43
    • 100 $105.43
    • 1000 $105.43
    • 10000 $105.43
    		Get Quote
    NAC APT10025JVFR Tube 4
    • 1 $85.07
    • 10 $85.07
    • 100 $78.36
    • 1000 $72.62
    • 10000 $72.62
    		Buy Now
    Richardson RFPD APT10025JVFR 10
    • 1 -
    • 10 $81.78
    • 100 $78.64
    • 1000 $78.64
    • 10000 $78.64
    		Buy Now
    Master Electronics APT10025JVFR
    • 1 -
    • 10 $76.6
    • 100 $76.6
    • 1000 $76.6
    • 10000 $76.6
    		Buy Now

    APT10025 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10025JLC Advanced Power Technology POWER MOS VI 1000V 34A 0.250 Ohm Original PDF
    APT10025JLC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10025JVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10025JVFR Advanced Power Technology POWER MOS V 1000V 34A 0.250 Ohm Original PDF
    APT10025JVFR Microsemi Power MOS V FREDFET Original PDF
    APT10025JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10025JVR Microsemi Power MOS V MOSFET Original PDF
    APT10025PVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF

    APT10025 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT10025JVR

    Abstract: DSA003650
    Text: APT10025JVR 34A 0.250Ω 1000V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10025JVR OT-227 E145592 APT10025JVR DSA003650

    APT10025JVFR

    Abstract: No abstract text available
    Text: APT10025JVFR 34A 0.250Ω 1000V POWER MOS V FREDFET S S Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original     		PDF APT10025JVFR OT-227 APT10025JVFR

    Untitled

    Abstract: No abstract text available
    Text: APT10025JVFR 34A 0.250Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10025JVFR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT10025JFLC 1000V POWER MOS VITM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Faster Switching • Easier To Drive • 100% Avalanche Tested MAXIMUM RATINGS S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is


    Original     		PDF APT10025JFLC OT-227 APT10025JF

    u 5601

    Abstract: APT10025JVFR
    Text: APT10025JVFR 34A 0.250Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10025JVFR OT-227 E145592 u 5601 APT10025JVFR

    5809

    Abstract: No abstract text available
    Text: APT10025PVR 33A 0.250Ω 1000V POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10025PVR 5809

    APT10025JVFR

    Abstract: No abstract text available
    Text: APT10025JVFR 34A 0.250Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10025JVFR OT-227 E145592 APT10025JVFR

    u 5601

    Abstract: APT10025JVFR DSA003649
    Text: APT10025JVFR 34A 0.250Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10025JVFR OT-227 E145592 u 5601 APT10025JVFR DSA003649

    APT10025JLC

    Abstract: No abstract text available
    Text: APT10025JLC 1000V 34A POWER MOS VITM S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT10025JLC OT-227 APT10025JLC

    APT10025JLC

    Abstract: No abstract text available
    Text: APT10025JLC 1000V 34A POWER MOS VITM S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT10025JLC OT-227 APT10025JLC

    u 5601

    Abstract: APT10025JVFR
    Text: APT10025JVFR 34A 0.250Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10025JVFR OT-227 E145592 u 5601 APT10025JVFR

    RY 227 tf 227

    Abstract: APT10025JVR mj 1504 h48 diode SPECIFICATIONS RY 227
    Text: APT10025JVR 34A 0.250Ω 1000V POWER MOS V S S Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original     		PDF APT10025JVR OT-227 RY 227 tf 227 APT10025JVR mj 1504 h48 diode SPECIFICATIONS RY 227

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    ZVT uc3875

    Abstract: 500w Full bridge transformer UC3875 ZVS design APT9804 unitrode manual sem-900 phase shifted zero voltage SEM900 UC3875 ZVT full bridge pwm controller uc3875 Bill Andreycak
    Text: APT9804 Ò APPLICATION NOTE By: Kenneth Dierberger Richard Redl Leo Saro High-Voltage MOSFET Behavior in Soft-Switching Converters: Analysis and Reliability Improvements Presented at Intelec ‘98 San Francisco Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating


    Original     		PDF APT9804 SEM-900, UC3875 U-136A. 135/D. ZVT uc3875 500w Full bridge transformer UC3875 ZVS design APT9804 unitrode manual sem-900 phase shifted zero voltage SEM900 ZVT full bridge pwm controller uc3875 Bill Andreycak

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    Untitled

    Abstract: No abstract text available
    Text: • R ADVANCED r M po w er Tec h n o lo g y APT10025JVFR 1000v 34a 0.250Q POWER MOS V‘ FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT10025JVFR 1000v OT-227 APT10025JVFR Con65) E145592

    SOT-227 Package

    Abstract: No abstract text available
    Text: ADVANCED POW ER Te c h n o l o g y ' APT10025JVFR 1000V POWER MOS V FREDFET 34A 0.250ÍÍ 5 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MO SFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V ,u


    OCR Scan     		PDF APT10025JVFR OT-227 MIL-STD-750 10OA/ns, SOT-227 Package

    Untitled

    Abstract: No abstract text available
    Text: APT10025JVR A dvanced P o w er Te c h n o l o g y 1000V 34A 0.250Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT10025JVR OT-227 Dra463)

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr

    Untitled

    Abstract: No abstract text available
    Text: • R r M A P T 10 0 4 3 J V R ADVANCED po w er Te c h n o l o g y 1000v 22A 0.430Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF 1000v OT-227 APT10043JVR E145592

    10025P

    Abstract: No abstract text available
    Text: A P T 10025P V R ADVANCED PO W ER Te c h n o l o g y iooov 33A 0.250a POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF 10025P APT10025PVR MIL-STD-750