APT MOSFET 1000 VOLTS 8 AMPS Search Results

nt 6600 G

Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
Contextual Info: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700

5017BVR

Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

APT100GF60LR

Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
Contextual Info: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of

mj 1504 transistor equivalent

Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
Contextual Info: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as

APT6015LVR

Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

catalog mosfet Transistor smd

Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Contextual Info: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

5514f

Abstract: TO220H APT5514 TO-220H
Contextual Info: ADVANCED POWER TECHNOL OGY OSE D | QESVTQT □ODDEL.4 □ | T-3^-lV APT6014FN 600V 43A 0.14 Q APT5514FN 550V 43A 0.14 Q POWER MQS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D . 'dm v gs All Ratings: Tc « 25°C unless otherwise specified.

Power MOSFET TT 2146

Abstract: MOSFET TT 2146 TO220H Z59 diode 414x
Contextual Info: ADVANCED P O WE R TECHNOLOGY OfiE D | 0257^0^ 4 | , T -2 9-I APT8030FN 800V 29A 0.30 Q APT7530FN 750V 29A 0.30 Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. Symbol Parameter

APT50M40

Contextual Info: PRODUCTS - Low Loss Power MOSFETs POWER MOS 7TMP W Low Loss MOSFETs E N WITH ALL THE BENEFITS OF POWER MOS V .PLUS Low Gate Charge Low Capacitances Low Loss Conduction & Switching Faster Switching / Lower Switching Losses . The lower capacitances combined with the

Contextual Info: ARF520 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165 V 150 W 100 MHz The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • Specified 125 Volt, 81 MHz Characteristics:

arco 406

Abstract: arco mica trimmer ARF520 700B C11-C13 VK200-4B mosfet class ab rf mica trimmer
Contextual Info: ARF520 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165 V 150 W 100 MHz The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • Specified 125 Volt, 81 MHz Characteristics:

AMPLIFIER 1500w

Abstract: Simple test MOSFET Procedures Transistor S1D ARF1510 750w planar transistor AN 1510
Contextual Info: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

AMPLIFIER 1500w

Abstract: ARF1510 15VCrss
Contextual Info: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

APT MOSFET 1000 VOLTS 8 Amps

Contextual Info: APT1003RCLL 1000V 4A 3.00Ω POWER MOS 7 R MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

arco 406

Abstract: arco mica trimmer ARF521 arco 2.22 pf trimmer 80 watt hf mosfet arco 465 ATC 1nF 700B C11-C13
Contextual Info: ARF521 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165V 150W 150MHz The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • Specified 125 Volt, 81MHz Characteristics:

class E power amplifier 13.56

Abstract: Amp. mosfet 1000 watt 750w planar transistor ARF1518 High power planar Transformer 100C ARF1501 cog 270PF ARF151
Contextual Info: ARF1518 D ARF1518 BeO 1525-100 G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1518 is an RF power transistor designed for very high power class C, D, and E applications in scientific, commercial, medical and industrial RF power generators and amplifiers up to 40MHz.

APT10030L2VR

Abstract: DSA003669
Contextual Info: APT10030L2VR 1000V 33A 0.300Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10030L2VR 0.300Ω 1000V 33A POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10030L2VR 1000V 33A 0.300Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

"27 mhz" amp

Abstract: arf15beo 700B ARF1500 ARF1501
Contextual Info: S D ARF1501 S D ARF1501 BeO RF POWER MOSFET 1525-xx G S S G S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

ARF1501

Abstract: "27 mhz" amp RF 207 Simple test MOSFET Procedures 700B ARF1500
Contextual Info: S D ARF1501 S D ARF1501 BeO RF POWER MOSFET 1525-xx G S S G S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

ARF 250v 1500w

Abstract: "27 mhz" amp ARF1500
Contextual Info: S D S S D S ARF1501 D ARF1500 BeO RF POWER MOSFET 1525-xx G S N - CHANNEL ENHANCEMENT MODE S G S S G S 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

AMPLIFIER 1500w

Contextual Info: S D ARF1502 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S N - CHANNEL ENHANCEMENT MODE G S 65V 1500W 40MHz The ARF1500 is an RF power transistor designed for class C/E operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.