APR98 Search Results

76145P

Contextual Info: HUF76145P3, HUF76145S3S Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Title UF7 45P UF76 5S3 bt A, V, 045 m, an, gic vel raF wer OSTs utho eyrds ter- These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This

Contextual Info: 1 4 3 RELEASED FOR PUBLICATION T H IS DRAWING I S UNPUBLISHED. 7 COPYRIGHT 19 BY AMP INCORPORATED. 2 ,19 LOC ALL RIGHTS RESERVED. DIST 50 AF DESCRIPTION LTR REL 1 CONTINUOUS L O C A T E D ON 2\ TO P RO D U C T I O N 0G1A-0105-98 DATE DWN AP VD APR98 MF

Contextual Info: DO NOT SCALE THIRD ANGLE METRIC PROJECTION ALTERNATE FORM - 4 x 2 ,0 = 8 ,0 SE C TIO N 4 9 ,9 - •21 ,9- A -A SECTION B -B -1 , 7 ■21 ,9!X. § M ][M M ][M ^ ][M M ][M M ] [M M ] [M M ] [M HÜBIiliiii Biiiiiiiiii HIÜIBIBilH l i i l h i h i <^ s mm iiiiBiliüB

Contextual Info: Key Parameters VRRM = 5000 IFAVM = 1410 IFSM = 17.5 VF0 = 1.13 rF = 0.44 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 14F5007 Doc. No. 5SYA 1126 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

3310 DIODE DATASHEET

Abstract: 21F2904
Contextual Info: Key Parameters VRRM = 3200 IFAVM = 2110 IFSM = 26.0 VF0 = 0.89 rF = 0.17 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 21F3204 Doc. No. 5SYA 1130 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

transistor A7

Abstract: G28F640J5 A5D2 Apr98
Contextual Info: CIC-56µ µBGA-48D-A6-YAM 56-Bump µ BGA to a 48-Pin DIP Apr-98 µ BGA DEVICES: EXAMPLES PIN CONFIGURATION: G28F320J5 G28F640J5 SOCKET: Yamaichi NP291-07210-AC08338 PRICING: QTY PRICE EACH 1-4 5-9 10-24 25-49 $310.00 $279.00 $263.50 $232.50 TYPICAL DIMENSIONS:

SD-83689-9002

Abstract: Marking 24C3 58967E
Contextual Info: 10 1.340 MAX. SEE 2. S E AL S AND J A C K PO S T J A C K PO S T P AR T INTERFACIAL ^ FLANGE I. MARKING: NOTES; io SEAL UMI, DATE UNLESS CAN SHEET PA NE L 2 BE PURCHASED SEPARATELY: NO. 8304 1-0054. SEAL P AR T PART N O .83096-0004. NO. 8 3 0 9 6 - 0 0 0 5 .

76145P

Abstract: 76145S TA7614 AN9321 AN9322 HUF76145P3 HUF76145S3S HUF76145S3ST TB334
Contextual Info: HUF76145P3, HUF76145S3S Data Sheet December 2001 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

IN1190A diode

Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

5SDA11D1702

Contextual Info: Key Parameters VRRM = 1700 IFAVM = 1310 IFSM = 15.0 VF0 = 0.74 rF = 0.25 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 11D1702 Doc. No. 5SYA 1119 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

10D1703

Abstract: 10D2303 10D2003
Contextual Info: Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 10D2303 Doc. No. 5SYA 1120 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

76145S

Abstract: 76145P TA7614 AN9321 HUF76145P3 HUF76145S3S HUF76145S3ST TB334
Contextual Info: HUF76145P3, HUF76145S3S TM Data Sheet August 2000 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: C "H Y U N D A I 16MX72 BIT SDRAM UNBUFFERED DIMM K-SERIES based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V72A1600/ HYM7V72A1601/ HYM7V72A1630/ HYM7V72A1631 DESCRIPTION The HYM7V72A1600/ 72A1601/ 72A1630/ 72A1631 K-Series are high speed 3.3-Volt synchronous

76145S

Abstract: 76145P HUF76145P3 HUF76145S3S HUF76145S3ST TB334
Contextual Info: HUF76145P3, HUF76145S3S Semiconductor Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the 145P3, innovative UltraFET process. HUF76 This advanced process technology

06D4407

Contextual Info: Key Parameters VRRM = 5000 IFAVM = 690 IFSM = 7.0 VF0 = 1.10 rF = 1.01 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 06D5007 Doc. No. 5SYA 1125 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

SCR gate drive circuit

Abstract: DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 SCR Gate Drive for ac to dc converter GBAN-PVI-1
Contextual Info: App. Notes Design Tips Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors

dell

Abstract: dell server PowerEdge
Contextual Info: Dell.com and other Internet Infrastructure Lessons Kevin D. Libert Director, Enterprise Systems Group Dell Corporation Agenda l l l The Internet and Intranet at Dell.com The Internet & Intranet market - Trends & Opportunities Dell Internet Infrastructure Dell.com: End of Q2, 1998

C2018

Abstract: aX 010
Contextual Info: 1 3 4 THIS DRAWING 7 IS C O P Y R IG H T U N P U B L IS H E D . 19 RELEASED BY AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S 2 ,19 LOC R ES ER V ED . D IS T r e v is i o n 50 AF : DESCRIPTION L TR REVISED PER 0G1A-0086-98 DATE DWN AP VD APR98 MF

Contextual Info: n 4 T H I S DRAWING C R E L E A S E D FOR P U B L I C A T I O N I S U N P U B L IS H E D . COPYRIGHT 19 2 3 BY AMP I MCORPORATED. ,19 LOC A LL R I G H I S R ES E R V E D . D IST CM revision 53 : DESCRIPTION LTR REV PER EC O G 1 B - 0 0 6 2 - 9 8 DATE DWN

76145p

Contextual Info: HUF76145P3, HUF76145S3S Semiconductor January 1999 Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs t These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

09d2004

Abstract: 09D2304 09-D2
Contextual Info: Key Parameters VRRM = 2600 IFAVM = 1020 IFSM = 11.5 VF0 = 0.87 rF = 0.39 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 09D2604 Doc. No. 5SYA 1121 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

DT94-15

Abstract: DOWNLOAD DT94-15 IR2110 h bridge application notes GBAN-PVI-1 DT98-2 ballast Self-Oscillating h bridge ir2113 ir21xx Self-Oscillating SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET
Contextual Info: Control ICs / MERs Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Control Integrated Circuits Description Document # Pages Date Control IC Selection Guides Application / Product / Feature Selection Guide

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566