APD CARRIER Search Results

Contextual Info: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Right: TO-C30737PH Series T-1¾ TO-like hrough-Hole Package (4.9 mm Diameter) Let: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coeficient APD

smd t1A

Abstract: t1A 13
Contextual Info: Photodiodes for High-Performance Applications Avalanche Right: TO-C30737PH Series T-1¾ TO-like Through-Hole Package (4.9 mm Diameter) P hotodiodes for Range Left: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) F inding Applications C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD

S13081

Abstract: APD Arrays
Contextual Info: Si APD, MPPC CHAPTER 03 1 Si APD 1-1 Features 1-2 Principle of avalanche multiplication 1-3 Dark current 1-4 Gain vs. reverse voltage characteristics 1-5 Noise characteristics 1-6 Spectral response 1-7 Response characteristics 1-8 Multi-element type 1-9 Connection to peripheral circuits

Contextual Info: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain

avalanche photodiode 1550nm sensitivity

Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 multiplication IC
Contextual Info: InGaAs AVALANCHE PHOTODIODE FPD15W51RT DESCRIPTION The FPD15W51RT is a wide bandwidth and high sensitivity InGaAs ava­ lanche photodiode APD mounted on a low parasitic ceramic carrier designed for use in optical transmission systems operating at a giga-bit-rate,

Fujitsu avalanche photodiode

Contextual Info: inGaAs AVALANCHE PHOTODIODE FPD13W51RT DESCRIPTION The FPD13W51RT is a wide bandwidth and high sensitivity InGaAs ava­ lanche photodiode APD mounted on a low parasitic ceramic carrier designed fo r use in optical transmission systems operating at a giga-bit-rate,

PerkinElmer Avalanche Photodiode

Contextual Info: Features and Benefits Introduction The short wavelength enhanced silicon avalanche photodiode APD by PerkinElmer (Model C30739ECERH) is designed for low light level applications covering the spectral range from less than 400 nm to greater than 700 nm. Benefits

Contextual Info: DATA SHEET APD Series: Hermetic Ceramic Packaged Silicon PIN Diode Devices Applications • Switches  Attenuators Features  Established PIN diode process  Low capacitance designs  Voltage ratings to 200 V  Tight control of I layer base width

AN92F

Abstract: CTX-02-16004 VICTOREEN model 500 tektronix 454a jim Williams ZTN4424 2n2369 avalanche datasheet of CMOS IC 74c90 P6046 11A33
Contextual Info: Application Note 92 November 2002 Bias Voltage and Current Sense Circuits for Avalanche Photodiodes Feeding and Reading the APD Jim Williams, Linear Technology Corporation INTRODUCTION Avalanche photodiodes APDs are widely utilized in laser based fiberoptic systems to convert optical data into

APD0810-203

Abstract: APD1510 APD0510-210
Contextual Info: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches • Attenuators Features • Established Skyworks PIN diode process • Low capacitance designs to 0.05 pF • Voltage ratings to 200 V • Chip size < 15 mils square

Contextual Info: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square

Contextual Info: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square

APD0805-000

Abstract: S1570
Contextual Info: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square

APD0520-000

Contextual Info: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches • Attenuators Features • Established Skyworks PIN diode process • Low capacitance designs to 0.05 pF • Voltage ratings to 200 V • Chip size < 15 mils square

APD1520-000

Abstract: APD2220-000 APD0505-000 APD0505-240 APD0510-000 APD0520-000 APD0805-000 APD0810-000 APD1510-000 APD1510-219
Contextual Info: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square

Contextual Info: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square

Contextual Info: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square

PM 8038

Abstract: e/10Gb CDR
Contextual Info: TS-S10D166C Preliminary October, 2011 40Gb/s CFP Optical Transceiver Module SCF0400E4 Series 40Gbps 40km, 4-lane x 10Gb/s CWDM, DFB-LD, APD-PD Features  4-lane x 10Gb/s CWDM Optical Interface  High quality and reliability optical sub-assemblies 

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

Contextual Info: SPS-43-48H-HP-TDE Features • Burst receive GPON OLT transceiver • Small Form Factor Pluggable, Simple SC Connector • “Fast Signal Detect” feature reduces ranging overhead • Simplified OLT “reset” timing • 1490 nm DFB Tx with isolator • 1310 nm APD Rx

Contextual Info: DATASHEET Photon Detection C30739ECERH Series Short Wavelength Enhanced Silicon Avalanche Photodiode Key Features The C30739ECERH large area silicon avalanche photodiode APD is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm.

Infrared detectors

Abstract: dark detector application ,uses and working
Contextual Info: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use

Contextual Info: Silicon Geiger Mode Avalanche Photodiode DESCRIPTION The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used in