Untitled
Abstract: No abstract text available
Text: PhotodiodeSForhiGh-PerFormAnceAPPlicAtionS Right: TO-C30737PH Series T-1¾ TO-like hrough-Hole Package (4.9 mm Diameter) Let: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coeficient APD
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O-C30737PH
C30737LH
C30737
C30724
Standard-90
C30737PH-500-90
C30737LH-500-90
C30737LH-500-92
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smd t1A
Abstract: t1A 13
Text: Photodiodes for High-Performance Applications Avalanche Right: TO-C30737PH Series T-1¾ TO-like Through-Hole Package (4.9 mm Diameter) P hotodiodes for Range Left: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) F inding Applications C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD
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O-C30737PH
C30737LH
C30737
C30724
C3072490
C30737PH-500-90
C30737LH-500-90
C30737LH-500-92
C30724EH
smd t1A
t1A 13
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S13081
Abstract: APD Arrays
Text: Si APD, MPPC CHAPTER 03 1 Si APD 1-1 Features 1-2 Principle of avalanche multiplication 1-3 Dark current 1-4 Gain vs. reverse voltage characteristics 1-5 Noise characteristics 1-6 Spectral response 1-7 Response characteristics 1-8 Multi-element type 1-9 Connection to peripheral circuits
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org/abs/1003
6071v2
S13081
APD Arrays
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Untitled
Abstract: No abstract text available
Text: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain
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D-82211
KAPD0001E05
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Hermetic Ceramic Packaged Silicon PIN Diode Devices Applications • Switches Attenuators Features Established PIN diode process Low capacitance designs Voltage ratings to 200 V Tight control of I layer base width
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APD0505
APD1520
203250B
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APD0810-203
Abstract: APD1510 APD0510-210
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches • Attenuators Features • Established Skyworks PIN diode process • Low capacitance designs to 0.05 pF • Voltage ratings to 200 V • Chip size < 15 mils square
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APD0505-000
200075M
APD0810-203
APD1510
APD0510-210
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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SQ04-0074.
200075O
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APD0805-000
Abstract: S1570
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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APD0505-000
200075K
APD0805-000
S1570
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APD0520-000
Abstract: No abstract text available
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches • Attenuators Features • Established Skyworks PIN diode process • Low capacitance designs to 0.05 pF • Voltage ratings to 200 V • Chip size < 15 mils square
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APD0505-000
200075I
APD0520-000
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lidar apd model
Abstract: APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode
Text: !"#$%& Avalanche Photodiodes: A User's Guide Abstract Avalanche photodiode detectors have and will continue to be used in many diverse applications such as laser range finders and photon correlation studies. This paper discusses APD structures, critical performance parameters and the excess noise factor.
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ED-13,
ED-0017/03/8,
C30902E/S,
C30921
lidar apd model
APD, laser, range, finder
photodiode pin alpha particles
APD bias gain
C30902S
geiger apd
InGaAs apd photodiode
Photodiode apd high sensitivity
germanium diode equivalent
PerkinElmer Avalanche Photodiode
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APD1520-000
Abstract: APD2220-000 APD0505-000 APD0505-240 APD0510-000 APD0520-000 APD0805-000 APD0810-000 APD1510-000 APD1510-219
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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APD0505
200075L
APD1520-000
APD2220-000
APD0505-000
APD0505-240
APD0510-000
APD0520-000
APD0805-000
APD0810-000
APD1510-000
APD1510-219
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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SQ04-0074.
200075Q
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PM 8038
Abstract: e/10Gb CDR
Text: TS-S10D166C Preliminary October, 2011 40Gb/s CFP Optical Transceiver Module SCF0400E4 Series 40Gbps 40km, 4-lane x 10Gb/s CWDM, DFB-LD, APD-PD Features 4-lane x 10Gb/s CWDM Optical Interface High quality and reliability optical sub-assemblies
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TS-S10D166C
40Gb/s
SCF0400E4
40Gbps
10Gb/s
1310nm
1331nm
IEEE802
PM 8038
e/10Gb CDR
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Untitled
Abstract: No abstract text available
Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used
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SAP500-Series
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Infrared detectors
Abstract: dark detector application ,uses and working
Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use
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Untitled
Abstract: No abstract text available
Text: Silicon Geiger Mode Avalanche Photodiode DESCRIPTION The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used in
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SAP500-Series
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diode wb7
Abstract: QMV7 diode wb4 transimpedance amplifier 10 GHz A0623534 QMV774AA pin photodetector diode wb3
Text: D68 10 Gb/s Transimpedance Amplifier Data Sheet Features Operates at OC-192/STM-64 data rates up to 12.5 Gb/s NRZ Interfaces with PIN or APD photodetectors Non-inverting operation into 50 Ω output load Single +8 V power supply Small size: 1.1 mm x 0.95 mm
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OC-192/STM-64
diode wb7
QMV7
diode wb4
transimpedance amplifier 10 GHz
A0623534
QMV774AA
pin photodetector
diode wb3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Silicon PIN Diode Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square Tight control of I layer base width
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SQ04-0074.
200075S
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application of programmable array logic
Abstract: led matrix vhdl code matrix circuit VHDL code vhdl code CRC vhdl code for accumulator GAL Gate Array Logic format .pof IR TRANSISTOR free circuit eprom programmer Erasable Programmable Logic Device
Text: Abbreviations May 1999 The 1999 Data Book uses the following abbreviations and acronyms: ACAP ACCESS AHDL AMPP APEX APD APU AN AS ASCII ASIC ASSP ATM BGA BNF BPR BSC BSDL BST CAE CAM CerDIP CMD CMOS CPLD CPU CQFP CRC DIP DRAM DS DSP DUT EAB EAU EDA EDF
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APD0510-000
Abstract: APD0520-000 APD0505-000 APD0505-240 APD0805-000 APD0810-000 APD1510-000 APD1520-000 APD2220-000
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications x Switches x Attenuators Features x Established Skyworks PIN diode process x Low capacitance designs to 0.05 pF x Voltage ratings to 200 V x Chip size < 15 mils square x Tight control of I layer base width
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APD0505-000
200075J
APD0510-000
APD0520-000
APD0505-240
APD0805-000
APD0810-000
APD1510-000
APD1520-000
APD2220-000
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application of programmable array logic
Abstract: GAL Gate Array Logic LSI LOGIC TRANSISTOR-TRANSISTOR VHDL MAC CHIP CODE altera TTL library
Text: Abbreviations May 1999 The 1999 D ata B o o k uses the following abbreviations and acronyms: ACAP ACCESS AHDL AMPP APEX APD APU AN AS ASCII ASIC ASSP ATM BGA BNF BPR BSC BSDL BST CAE CAM CerDIP CMD CMOS CPLD CPU CQFP CRC DIP DRAM DS DSP DUT EAB EAU EDA EDF
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sps4348hcpcdfsd
Abstract: 4348H
Text: SPS-43-48H-CP-CDF-SD Features • Class C+ GPON OLT transceiver • Small Form Factor Pluggable, Simple SC Connector • 2488 Mbps downstream Tx/1244 Mbps upstream Rx • Fully ITU-T G.984.2 compliant • High Power 1490nm DFB transmitter +3dBm • High Sensitivity Burst Mode 1310 nm APD receiver (-30 dBm)
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SPS-43-48H-CP-CDF-SD
Tx/1244
1490nm
300nS
DS-5165
sps4348hcpcdfsd
4348H
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vhdl code for loop filter of digital PLL
Abstract: GAL Gate Array Logic ISA CODE VHDL Gate array logic
Text: Abbreviations June 1996 The 1996 D a ta B o o k uses the following abbreviations: ACCESS AHDL AM PP AN APD APU AS ASCII ASIC ASSP ATM BBS BGA BNF BPR BSC BSDL BST CAE CAS CCD CerDIP CM D CM OS CPLD CPU CQFP CRC DIP DRAM DS DSP DUT EAB EAU EDA Altera Corporation
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LUCENT InGaAs
Abstract: No abstract text available
Text: Avalanche Photodetectors Lucent's InGaAs A valanche P h o to d e te cto rs APD in clude h ig h -p e rfo rm a n c e p h o to d e te c to rs in a variety o f sta n d a rd packages. H igh speed and sensitivity c o m b in e d w ith p la n ar s tru c tu re fo r high re lia b ility
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