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    C30724 Search Results

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    C30724 Price and Stock

    Picker Components PC307-24G-X

    RELAY GEN PURPOSE SPDT 1A 24V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PC307-24G-X Tube 1,175 1
    • 1 $1.43
    • 10 $1.43
    • 100 $1.0726
    • 1000 $0.83426
    • 10000 $0.80446
    Buy Now

    Excelitas Technologies Corporation C30724PH

    SENSOR PHOTODIODE 920NM TO18-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C30724PH Bulk 84 1
    • 1 $21.75
    • 10 $21.75
    • 100 $21.75
    • 1000 $21.75
    • 10000 $21.75
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    Siemens LCE00C307240A

    CONTACTOR,LTG,EH,OPEN,30A,3NC,7N
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LCE00C307240A Box 1
    • 1 $1020.53
    • 10 $1020.53
    • 100 $1020.53
    • 1000 $1020.53
    • 10000 $1020.53
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    Mouser Electronics LCE00C307240A
    • 1 $1020.52
    • 10 $1020.52
    • 100 $1020.52
    • 1000 $1020.52
    • 10000 $1020.52
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    Siemens LCE02C307240A

    CONTACTOR,LTG,EH,N12,30A,3NC,7NO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LCE02C307240A Bulk 1
    • 1 $1560.98
    • 10 $1560.98
    • 100 $1560.98
    • 1000 $1560.98
    • 10000 $1560.98
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    Mouser Electronics LCE02C307240A
    • 1 $1505.83
    • 10 $1505.83
    • 100 $1505.83
    • 1000 $1505.83
    • 10000 $1505.83
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    Siemens LCE01C307240A

    CONTACTOR,LTG,EH,N1,30A,3NC,7NO,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LCE01C307240A Box 1
    • 1 $1349.84
    • 10 $1349.84
    • 100 $1349.84
    • 1000 $1349.84
    • 10000 $1349.84
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    Mouser Electronics LCE01C307240A
    • 1 $1349.83
    • 10 $1349.83
    • 100 $1349.83
    • 1000 $1349.83
    • 10000 $1349.83
    Get Quote

    C30724 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C30724P EG&G LOW COST SILICON AVALANCHE PHOTODIODE (Plastic Encapsulated Package) Scan PDF
    C30724PH Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE APD TO-18 PLASTIC Original PDF

    C30724 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Right: TO-C30737PH Series T-1¾ TO-like hrough-Hole Package (4.9 mm Diameter) Let: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coeficient APD


    Original
    PDF O-C30737PH C30737LH C30737 C30724 Standard-90 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92

    smd t1A

    Abstract: t1A 13
    Text: Photodiodes for High-Performance Applications Avalanche Right: TO-C30737PH Series T-1¾ TO-like Through-Hole Package (4.9 mm Diameter) P hotodiodes for Range Left: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) F inding Applications C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD


    Original
    PDF O-C30737PH C30737LH C30737 C30724 C3072490 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92 C30724EH smd t1A t1A 13

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original
    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original
    PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    PGEW 3S09

    Abstract: C30724 PerkinElmer Optoelectronics 3S09 PGEW 1S03 laser diode 905nm 905nm Plastic Pulsed Laser Diode LO-081 2S09 PGEW2S09
    Text: Optoelectronics Description Applications The PGEW series employs an advanced multiple quantum well laser diode chip design producing high peak output power at low drive current. Peak wavelength is centered near the maximum responsivity of most silicon photodiodes including PerkinElmer


    Original
    PDF C30724 905nm lO-0812/03 PGEW 3S09 PerkinElmer Optoelectronics 3S09 PGEW 1S03 laser diode 905nm 905nm Plastic Pulsed Laser Diode LO-081 2S09 PGEW2S09

    Untitled

    Abstract: No abstract text available
    Text: D A T A S H E DPGEW & TPGEW Series 905 nm Pulsed Laser Diodes E S E N S O R S O LUTI O N S Multi EPI-Cavity Plastic Lasers T Overview The double DPEW and triple (TPGEW) EPI-cavity structures are 905 nm pulsed lasers in low cost plastic encapsulated packages. These package types complement PerkinElmer's


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    PDF DTS1107

    laser diode 905nm

    Abstract: C30724 EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09
    Text: PGEW Series 905nm Plastic Pulsed Laser Diode Description Applications The PGEW series employs an advanced multiple quantum well laser diode chip design producing high peak output power at low drive current. Peak wavelength is centered near the maximum responsivity of


    Original
    PDF 905nm C30724 lO-0812/03 laser diode 905nm EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09

    EG*G Optoelectronics

    Abstract: C30724 C30724P EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100
    Text: J^E G S G CANADA AN OPTOELECTRONICS GROUP COMPANY SÌ APD Package 04-22-97) C30724P Features: 3.25/3.17 ( 0 . 1 2 8 ) / ( 0 .125) 3_ 1 .0 2 (0.040) CATHODE cxzzr 3 t = I J . 2.54 ( 0 . 100 ) ANODE 0 .4 6 -c


    OCR Scan
    PDF C30724P 900nm C30724P EG*G Optoelectronics C30724 EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100