Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AP A7 SOT 23 Search Results

    AP A7 SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    AP A7 SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SBAV99

    Abstract: SBAV99LT1G SBAV99LT3G BAV99LT1G
    Text: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318


    Original     		PDF BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G AEC-Q101 BAV99LT1/D SBAV99 SBAV99LT1G BAV99LT1G

    agilent RF Marking 07

    Abstract: AN1124 marking a4 SOT-143 marking code C4 Sot 23-5 HSMS-280X
    Text: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options


    Original     		PDF HSMS-280x OT-23/SOT-143 5968-2356E, 5968-5943E 5968-7960E agilent RF Marking 07 AN1124 marking a4 SOT-143 marking code C4 Sot 23-5

    marking code C4 Sot 23-5

    Abstract: sot143 marking code A5 2805 diode bridge Marking Code ABC SOT 143 footprint SOT-363 a7 DIODES SC-70 MARKING C3 Analog devices code marking AB marking code tc sot 363 diode marking code C3 sot23
    Text: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options


    Original     		PDF HSMS-280x OT-23/SOT-143 d70-3 OT-363 SC70-6 5968-7960E 5989-0474EN marking code C4 Sot 23-5 sot143 marking code A5 2805 diode bridge Marking Code ABC SOT 143 footprint SOT-363 a7 DIODES SC-70 MARKING C3 Analog devices code marking AB marking code tc sot 363 diode marking code C3 sot23

    marking a4 SOT-143

    Abstract: SOT 143 footprint sc70-3 PCB PAD A5 sot-23 single DIODE 2805 diode bridge marking code C4 Sot 23-5 sot143 marking code A3
    Text: Agilent HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* Description/Applications Package Lead Code Identification, SOT-323 (Top View) These Schottky diodes are


    Original     		PDF HSMS-280x OT-323 HSMS-280x OT-363 SC70-6 5989-2492EN 5989-4020EN marking a4 SOT-143 SOT 143 footprint sc70-3 PCB PAD A5 sot-23 single DIODE 2805 diode bridge marking code C4 Sot 23-5 sot143 marking code A3

    SOT-363 a7

    Abstract: marking A5 sot363 marking code C4 Sot 23-5 DIODES SC-70 MARKING C3 SOT 363 marking CODE a7 AVAGO DATE CODE MARKING AVAGO DATE CODE MARKING symbol
    Text: HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The


    Original     		PDF HSMS-280x HSMS-280x OT-323 SC70-3 OT-363 SC70-6 5989-2492EN 5989-4020EN SOT-363 a7 marking A5 sot363 marking code C4 Sot 23-5 DIODES SC-70 MARKING C3 SOT 363 marking CODE a7 AVAGO DATE CODE MARKING AVAGO DATE CODE MARKING symbol

    PC2-3200

    Abstract: PC2-5300 WV3HG64M32EEU-D4 U37Y
    Text: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB – 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM components. The module consists of four 64Mx8,


    Original     		PDF WV3HG64M32EEU-D4 256MB 64Mx32 200-pin, WV3HG64M32EEU 512Mb 64Mx8, PC2-5300* PC2-4200 PC2-3200 PC2-5300 WV3HG64M32EEU-D4 U37Y

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3HG2128M64EEU-D4 2GB – 2x128Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ Unbuffered 200-pin, dual in-line memory module SO-DIMM „ Fast data transfer rates: PC2-5300, PC2-4200 and PC2-3200 „ Based or Raw Card E design architecture


    Original     		PDF W3HG2128M64EEU-D4 2x128Mx64 200-pin, W3HG2128M64EEU 128Mx8 200-pin PC2-5300, PC2-4200 PC2-3200

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3HG232M64SEU-D4 ADVANCED* 512MB – 2x32Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ Unbuffered 200-pin, Small-Outline DIMM SODIMM Raw card A „ Fast data transfer rates: PC2-6400*, PC2-5300, PC2-4200 and PC2-3200 „ Utilizes 800*, 667, 533 and 400 MT/s DDR2


    Original     		PDF W3HG232M64SEU-D4 512MB 2x32Mx64 200-pin, W3HG232M64SEU 32Mx16, 32Mx64 PC2-6400*

    PC2-3200

    Abstract: PC2-5300 PC2-6400
    Text: White Electronic Designs W3HG232M64SEU-D4 ADVANCED* 512MB – 2x32Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ Unbuffered 200-pin, Small-Outline DIMM SODIMM Raw card A „ Fast data transfer rates: PC2-6400*, PC2-5300, PC2-4200 and PC2-3200 „ Utilizes 800*, 667, 533 and 400 MT/s DDR2


    Original     		PDF W3HG232M64SEU-D4 512MB 2x32Mx64 200-pin, W3HG232M64SEU 32Mx16, 32Mx64 PC2-6400* PC2-3200 PC2-5300 PC2-6400

    ad4xg

    Abstract: ddr2 module ecc 128M 72 PC2-6400 WV3HG2128M72EEU-AD4 PC2-3200 PC2-5300
    Text: White Electronic Designs WV3HG2128M72EEU-AD4 ADVANCED* 2GB – 2x128Mx72 DDR2 SDRAM UNBUFFERED, ECC w/PLL FEATURES DESCRIPTION 200-pin, dual in-line memory module SO-DIMM The WV3HG2128M72EEU is a 2x128Mx72 Double Data Rate DDR2 SDRAM high density module. This memory


    Original     		PDF WV3HG2128M72EEU-AD4 2x128Mx72 200-pin, WV3HG2128M72EEU 128Mx8 200-pin PC2-6400* PC2-5300* PC2-4200 ad4xg ddr2 module ecc 128M 72 PC2-6400 WV3HG2128M72EEU-AD4 PC2-3200 PC2-5300

    PC2-3200

    Abstract: PC2-5300 PC2-6400 WV3HG264M64EEU-D4
    Text: White Electronic Designs WV3HG264M64EEU-D4 ADVANCED* 1GB – 2x64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, dual in-line memory module SO-DIMM The WV3HG264M64EEU is a 2x64Mx64 Double Data Rate DDR2 SDRAM high density SO-DIMM. This memory module consists of sixteen 64Mx8 bit with 4 banks DDR2


    Original     		PDF WV3HG264M64EEU-D4 2x64Mx64 200-pin, WV3HG264M64EEU 64Mx8 200-pin PC2-6400* PC2-5300* PC2-4200 PC2-3200 PC2-5300 PC2-6400 WV3HG264M64EEU-D4

    PC2-3200

    Abstract: PC2-5300 PC2-6400 WV3HG2128M64EEU-D4
    Text: White Electronic Designs WV3HG2128M64EEU-D4 ADVANCED* 2GB – 2x128Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, dual in-line memory module SO-DIMM The WV3HG2128M64EEU is a 2x128Mx64 Double Data Rate DDR2 SDRAM high density SO-DIMM. This memory


    Original     		PDF WV3HG2128M64EEU-D4 2x128Mx64 200-pin, WV3HG2128M64EEU 128Mx8 200-pin PC2-6400* PC2-5300* PC2-4200 PC2-3200 PC2-5300 PC2-6400 WV3HG2128M64EEU-D4

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WV3HG232M64EEU-D4 ADVANCED* 512MB – 2x32Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG232M64EEU is a 2x32Mx64 Double Data Rate 2 SDRAM memory module based on 256Mb DDR2 SDRAM components. The module consists of sixteen


    Original     		PDF WV3HG232M64EEU-D4 512MB 2x32Mx64 200-pin, WV3HG232M64EEU 256Mb 32Mx8, PC2-5300* PC2-4200

    DSK tms320C542

    Abstract: TPS71010 HP16522A pin diagram of 2 to 4 decoder mark w06 sot 23 r68e W04 sot 23 W07 sot 23 1206 chip resistor size in mm W16 sot 23
    Text: TLV1562 With TLC5618 and THS5651 DAC 10ĆBit, 2M Sample, A/D Converter, Parallel Data Output EVM User’s Guide October 1999 Mixed Signal Products SLAU031 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue


    Original     		PDF TLV1562 TLC5618 THS5651 10Bit, SLAU031 DSK tms320C542 TPS71010 HP16522A pin diagram of 2 to 4 decoder mark w06 sot 23 r68e W04 sot 23 W07 sot 23 1206 chip resistor size in mm W16 sot 23

    heds 5310

    Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
    Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»


    Original     		PDF

    samsung PC2-3200

    Abstract: PC2-3200 PC2-5300 WV3HG64M64EEU-D4
    Text: White Electronic Designs WV3HG64M64EEU-D4 ADVANCED* 512MB – 64Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM FEATURES DESCRIPTION Unbuffered 200-pin, Small-Outline DIMM SODIMM The WV3HG64M64EEU is a 64Mx64 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM


    Original     		PDF WV3HG64M64EEU-D4 512MB 64Mx64 200-pin, WV3HG64M64EEU 512Mb 64Mx8, PC2-5300* PC2-4200 samsung PC2-3200 PC2-3200 PC2-5300 WV3HG64M64EEU-D4

    DM 024

    Abstract: PC2-3200 PC2-5300 WV3HG32M40SEU-PD4 DDR2 DIMM 240 pinout micron
    Text: White Electronic Designs WV3HG32M40SEU-PD4 ADVANCED* 128MB – 32Mx40 DDR2 SDRAM UNBUFFERED, ECC, w/PLL FEATURES DESCRIPTION Unbuffered 200-pin, Small-Outline DIMM SODIMM The WV3HG32M40SEU is a 32Mx40 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM


    Original     		PDF WV3HG32M40SEU-PD4 128MB 32Mx40 200-pin, WV3HG32M40SEU 512Mb 32Mx16, PC2-5300* PC2-4200 DM 024 PC2-3200 PC2-5300 WV3HG32M40SEU-PD4 DDR2 DIMM 240 pinout micron

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification Octal bus transceiver/register; 3-state • • • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance w ith the JEDEC 3.3 V ±0.3 V supply CMOS low power consum ption Flow-through pin-out


    OCR Scan     		PDF 74HL33646

    FMMD914

    Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
    Text: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film


    OCR Scan     		PDF OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A FMMD914 FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70

    74106

    Abstract: SBB2632D SBB2632E SBB2632P sot86b sot-86b Mullard ttl
    Text: D EV ELO PM E N T SAMPLE D A T A T h is in fo r m a tic m a d e ìjv a 11a l 11.1 im p ly t h a ï th .' s d e riv e d f r o m d e v e io p rn o n SBB2632P.D.E e v a lu a t i o n . L; d o es n o t in 'ic e w ill go m t ) re q u la r pr 32 768-BIT STATIC READ ONLY MEMORY


    OCR Scan     		PDF SBB2632P 768-BIT SBB2632 M82-2113/RE 74106 SBB2632D SBB2632E sot86b sot-86b Mullard ttl

    1026Y

    Abstract: Signetics OR Mullard SBB2633D SBB2633E SBB2633P sot86b
    Text: DEVELOPMENT SAMPLE DATA SBB2633P SBB2633D SBB2633E T h i s i n f o r m a t io n is d e r iv e d F ro m d e v e lo p m e n t s a m p le s m a d e a v a ila b le f o r e v a lu a t i o n . I t d o e s n o t n e c e s s a r i ly im p l y t h a t t h e d e v ic e w i l l g o in t o r e g u la r p r o d u c t i o n .


    OCR Scan     		PDF SBB2633P SBB2633D SBB2633E SBB2633 24-lead OT-101) SBB2633P, OT-94) SBB2633D 24-ILEAD 1026Y Signetics OR Mullard SBB2633E sot86b

    Diode Marking z3 SOT-23

    Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
    Text: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­


    OCR Scan     		PDF ZC830A OT-23 C9/C20 50MHz ZC831A ZC832A ZC833A Diode Marking z3 SOT-23 dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23

    lc3518

    Abstract: LC3518B lc3518bl LC3518B15 LC3518BSL IC351 lc3516 lc3518b-15 3518-B BS1215
    Text: SANYO S E M I C O N D U C T O R CO RP S3E ]> • ? e5c57D7b G G I O I O S 311 » T S A J Ordering number. EN37SS| CMOS LSI í LC3518B. BM. BS, BL, BML, BSL SAßYO, 'w -Ä - ■r: - - i 2048-word x 8-bit CMOS Static RAM i OVERVIEW PACKAGE DIMENSIONS LC3518B series devices are silicon-gate CM OS, static


    OCR Scan     		PDF 57D7b EN37SS| LC3518B. 2048-word LC3518B LC3S18B LC3518BL, LC3518BM LC3518BSL LC3518B/BM/BS-12/15 lc3518 lc3518bl LC3518B15 IC351 lc3516 lc3518b-15 3518-B BS1215

    MAB8048

    Abstract: PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
    Text: Philips Components pcf84 ci2i y v _ DEVELOPMENT DATA T h is data s h e e t c o n ta in s advance in fo rm a tio n and s p e c ific a tio n s w h ic h are s u b je c t to change w ith o u t n o tic e .


    OCR Scan     		PDF PCF84C121. PCF84C121 PCF84C12. M88-1554/RC MAB8048 PCF84C12 PCF84C121P PCF84C121T S020