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    Text: AOD4189 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4189/L uses advanced trench technology and design to provide excellent R DS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high


    Original     		PDF AOD4189 AOD4189/L AOD4189L -AOD4189L O-252 1E-04