AOA1 Search Results

G1123

Contextual Info: TBP24SAI0 1024 BITS 256 WORDS BY 4 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH OPEN-COLLECTOR OUTPUTS pin assignment logic symbol TBP24SA10 J OR N PACKAGE TBP24SA10 PROM 256 X 4 AOA1A2A3A4A5A6- (TOP VIEW) (5) A6 £ 1 U i . 3 v c c A5 C 2 15 3 A 7

L817

Contextual Info: TBP24SA41 4096 BITS 1024 WORDS BY 4 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH OPEN-COLLECTOR OUTPUTS pin assignment logic symbol TBP24SA41 TBP24SA41 J OR N PACK/ (TOP VIEW PROM 1024 X 4 AOA1A2A3A4A5A6A7A8A9G2G1- (5) O', QO Q1 A3 C 4 AOC 5 3 Vcc

C193

Contextual Info: TBP28S166 16,384 BITS 2084 WORDS BY 8 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH 3-STATE OUTPUTS logic symbol AOA1 A2 A3 A4 A5 A6 A7 A8 A9 A10 G3 G2 pin assignment TBP28S166 (8 ) (7) (6 ) AV (5) AV (3) >A (2) 2047 (1) (23) -Q0 ( 10) “Q1 (11) -Q2

Contextual Info: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE INTERSIL CD 54/74FC T653, CD54/74FCT653AT CD 54/74FC T654, CD54/74FCT654AT July 1990 Octal Bus Transceivers/ Registers, Open-Drain A Side , 3-State (B Side) AOA1 A2 A DATA « A3 A4 PORT A5 A6A7 OEBA

Contextual Info: TBP28SA86A 8192 BITS 1024 WORDS BY 8 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH OPEN-COLLECTOR OUTPUTS pin assignment logic symbol TBP28SA86A TBP28SA86A JW OR NW PACKAGE PROM 1024 X 8 AOA1A2A3A4- (TOP VIEW) (8 ) (7) A£ (6) AÛ (5) (4) A£ (3) A 5( 2)

Contextual Info: TBP28S86A 8192 BITS 1024 WORDS BY 8 BITS STANDARD PROGRAM M ABLE READ-ONLY M EM ORIES WITH 3-STATE OUTPUTS logic symbol pin assignment TBP28S86A TBP28S86A JW OR NW PACKAGE (TOP VIEW) PROM 1024 X 8 (8 ) AOA1- (7) A2- (5) A3- (4) A4- (3) ( 2) A 5A 6- 1023

Contextual Info: SMJ416160, SMJ418160 1048576-WORD BY 16-BIT HIGH-SPEED DRAM 1 SGMS720A - APRIL 1995 - REVISED JUNE 1995 XXX PACKAGE TOP VIEW ACCESS ACCESS ACCESS TIME TIME TIME '41x160-60 41x160-70 '41x160-80 • • • • • • • • tRAC MAX 60 ns 70 ns SO n* *CAC

Contextual Info: TMS44100, TMS44100P 4194304-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS410F-SEPTEMBER 1989-REVISED DECEMBER 1992 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS SD P AC K A G E t (TOP VIEW) DJ P A C K A G E t (TOP VIEW) Organization . . . 4194 304 x 1

TMS47C256 ROM

Contextual Info: TE XA S INS TR -CASIC/NEHORY} 77 ADVANCE INFORMATION 0^1725 DE 0040=107 4 | ~ TMS47C256 32,768-WORD BY 8-BIT READ-ONLY M EM O RY NOVEMBER 1985 N PACKAGE • 32,768 X 8 Organization • Fully Static No Clocks, No Refresh • All Inputs and Outputs TTL Compatible

27LV010A

Contextual Info: TMS27LV010A1 048 576-BIT UV ERASABLE LOW VOLTAGE PROGRAMMABLE ROM TMS27LV010A1 048 576-BIT LOW VOLTAGE ONE-TIME PROGRAMMABLE ROM SMLS113-DECEMBER 1992 x 8 J AND N PACKAGESt TOP VIEW Single 3.3-V Power Supply Operationally Compatible With Existing 1-Megabit EPROMs

TC518129

Abstract: de interlace
Contextual Info: TOSHIBA TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 2 9 A is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 29A utilizes

2332 eprom

Abstract: PIN-20 IC DIAGRAM 2332 rom 2732A eprom
Contextual Info: TMS2332 4096-WORD BY 8-BIT READ-ONLY MEMORY SEPTEMBER 1984 - REVISED NOVEMBER 1985 4 0 9 6 X 8 Organization N PACKAGE All Inputs and Outputs TTL Compatible TOP VIEW A 7 C 1 ^ 2 4 3 v Cc A6£ 2 23 3 A 8 A5 £ 3 22 > 9 Fully Static (No Clocks. No Refresh)

Ks-7b

Contextual Info: TMS417800, TMS417800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 7 8 0 -D E C E M B E R 1992 x 8 DE P AC K A G E t DZ P A C K AG E t TOP VIEW (TOP VIEW) * Performance Ranges: vcc[ 1o D Q 0[ 2 ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE

44-800-p

Abstract: 44800P PIN DIAGRAM of IC AD 524 IN2045
Contextual Info: TMS44800, TMS44800P 524 288-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS480B-AUGUST1992-REVISED DECEMBER 1992 This data sheet is applicable to all TMS44800/Ps symbolized with Revision“B" and subsequent revisions as described on page 22. * Organization . . . 524 288 x 8

Contextual Info: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70

MATRA

Contextual Info: Te m ic HM 65764 MATRA MHS 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum power consumption of only 743 mW.

Contextual Info: SONY CXK77410J -10/12/15 262,144-WORD by 4-BIT HIGH SPEED CMOS SYNCHRONOUS STATIC RAM PRELIMINARY Description The CXK77410J is a high speed CMOS syn­ chronous static RAM with separate I/O pins, or­ ganized as 262,144-words by 4-bits. This synchronous SRAM integrates input registers,

7A SF 51

Abstract: BCE-078 2900Hz haf0
Contextual Info: Hybrid ICs T D K CORP SäE D • 0 0 2 1 2 4 0 D D D b 4 b ? T3T ■ TDKA DIGITAL AUDIO ACTIVE LOW PASS FILTERS, AL SERIES EXAMPLE A LO 17 A fi Part No. Filter factor AL017 9th 9th AL018 AL030 Cut-off frequency (kHz) Ripple (dB) Attenuation (dB) Distortion

AK6321024

Abstract: AK63232Z AK63264
Contextual Info: Accutek Microcircuit Corporation AK63232Z 32,768 x 32 Bit CMOS / BiCMOS Static Random Access Memory DESCRIPTION The Accutek AK63232Z SRAM Module consists of fast high performance SRAMs mounted on a low profile, 64 pin ZIP Board. The module utilizes four 28 pin 32K x 8 SRAMs in 300 mil SOJ packages

Q67100-Q3018

Abstract: Q67100-Q3019
Contextual Info: SIEM EN S 8M X 36-Bit EDO-DRAM Module HYM 368035S/GS-60 Advanced Inform ation • 8 388 608 words by 36-Bit organization in 2 banks • Fast access and cycle time 60 ns RAS access time 15 ns CAS access tim e 104 ns cycle time • Hyper page mode EDO capability

PDM44018

Contextual Info: bTHlDTD OODCmS? Tbfc. IP AT PDM 44018 64K x 18 Fast CMOS Synchronous Static SRAM with Burst Counter Features Description □ Interfaces directly with the i486 , Pentium™ processors 66.6,60,50,40,33.3 MHz The PDM44018 is a 1,179,648 bit synchronous ran­

DS24

Contextual Info: O K I Semiconductor MSC238361A-xxBS24/PS24 8,388,608-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI M SC238361A-xxBS24/ DS24 is a fully decoded 8,388,608-word x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 16-Mb DRAMs 4M x 4 in SOJ packages

12024-3

Abstract: 74LVT16652 74LVT16652MEA 74LVT16652MEAX 74LVT16652MTD 74LVT16652MTDX LVT16652 MTD56
Contextual Info: LVT16652 ADVANCE INFORMATION National Semiconductor 74LVT16652 3.3V ABT 16-Bit Transceiver/Register with TRI-STATE Outputs General Description Features The LVT16652 consists of sixteen bus transceiver circuits with D-type flip-flops, and control circuitry arranged for multi­

Contextual Info: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase