AO3423
Abstract: HTGB
Text: AOS Semiconductor Product Reliability Report AO3423/AO3423L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Apr 19, 2006 1 This AOS product reliability report summarizes the qualification result for AO3423. Accelerated
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Original
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AO3423/AO3423L,
AO3423.
AO3423
Mil-Std-105D
HTGB
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PDF
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Untitled
Abstract: No abstract text available
Text: AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3423/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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Original
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AO3423
AO3423/L
AO3423
AO3423L
-AO3423L
O-236
OT-23)
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PDF
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AO3423
Abstract: No abstract text available
Text: AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3423/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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Original
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AO3423
AO3423/L
AO3423
AO3423L
-AO3423L
O-236
OT-23)
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PDF
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AO3423
Abstract: No abstract text available
Text: AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3423 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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Original
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AO3423
AO3423
AO3423L
O-236
OT-23)
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PDF
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