xxww
Abstract: Chip Inductor CS Coilcraft
Text: Coilcraft S-Parameter Data for RF Surface Mount Inductors 1008LS Series Chip Inductors Version 1008LS August, 2012 Coilcraft, Inc. 2012 Coilcraft two-port S-parameter data files are based on empirical measurements of Coilcraft RF Surface Mount Inductors. The data files are used as "black box"
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1008LS
xxww
Chip Inductor CS Coilcraft
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ADF41020
Abstract: db18 DB9 db15 DB-21 DB14 pin configuration DB21 DB16 1030401 MAG-S11 DB23
Text: AVDD DVDD VP RSET CPGND REFERENCE REFIN CLK DATA LE 24-BIT INPUT REGISTER R COUNTER PHASE FREQUENCY DETECTOR R COUNTER LATCH LOCK DETECT FUNCTION LATCH A, B COUNTER LATCH CHARGE PUMP CP CURRENT SETTING 1 CURRENT SETTING 2 CPI3 CPI2 CPI1 CPI6 CPI5 CPI4 HIGH Z
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24-BIT
ADF41020
ADSP-BF527
ADuC7020
08-16-2010-B
MO-220-WGGD-1.
ADF41020
db18
DB9 db15
DB-21
DB14 pin configuration
DB21
DB16
1030401
MAG-S11
DB23
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PDF
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MHz frequency counter
Abstract: No abstract text available
Text: PLL Frequency Synthesizer ADF4106-EP Data Sheet FEATURES GENERAL DESCRIPTION 6.0 GHz bandwidth 2.7 V to 3.3 V power supply Separate charge pump supply VP allows extended tuning voltage in 3 V systems Programmable dual-modulus prescaler 8/9, 16/17, 32/33, 64/65
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ADF4106-EP
ADF4106-EP
16-Lead
20-Lead
04-09-2012-B
RU-16
CP-20-1
CP-20-1
MHz frequency counter
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VCO190-902T
Abstract: M3500-2235 8051 edge detection M3500
Text: RF PLL Frequency Synthesizers ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet FEATURES GENERAL DESCRIPTION ADF4110: 550 MHz; ADF4111: 1.2 GHz; ADF4112: 3.0 GHz; ADF4113: 4.0 GHz 2.7 V to 5.5 V power supply Separate charge pump supply VP allows extended tuning
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ADF4110/ADF4111/ADF4112/ADF4113
ADF4110
13-bit)
14-bit
16-Lead
CP-20-6
CP-20-1
D03496-0-8/12
VCO190-902T
M3500-2235
8051 edge detection
M3500
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TDS714L
Abstract: modulator 26MHz AD8302 spur spur free fractional PLL pong VCO190-1843T ADF4193 DCS1800 GSM900 TRANSISTOR SDM M6
Text: Low Phase Noise, Fast Settling PLL Frequency Synthesizer ADF4193 FEATURES GENERAL DESCRIPTION New, fast settling, fractional-N PLL architecture Single PLL replaces ping-pong synthesizers Frequency hop across GSM band in 5 s with phase settled by 20 μs 0.5° rms phase error at 2 GHz RF output
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ADF4193
ADF4193
CP-32-3)
ADF4193BCPZ
ADF4193BCPZ-RL1
ADF4193BCPZ-RL71
EVAL-ADF4193EB1
EVAL-ADF4193EB2
32-Lead
TDS714L
modulator 26MHz
AD8302
spur
spur free fractional PLL pong
VCO190-1843T
DCS1800
GSM900
TRANSISTOR SDM M6
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ADF4206
Abstract: ADF4207 ADF4208 VCO190-1068U wcdma receiver 902D ad4208
Text: a Dual RF PLL Frequency Synthesizers ADF4206/ADF4207/ADF4208 FEATURES ADF4206: 550 MHz/550 MHz ADF4207: 1.1 GHz/1.1 GHz ADF4208: 2.0 GHz/1.1 GHz 2.7 V to 5.5 V Power Supply Selectable Charge Pump Supply VP Allows Extended Tuning Voltage in 3 V Systems Selectable Charge Pump Currents
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ADF4206/ADF4207/ADF4208
ADF4206:
Hz/550
ADF4207:
ADF4208:
ADF4206
precision-20)
C01036
RU-16)
ADF4207
ADF4208
VCO190-1068U
wcdma receiver
902D
ad4208
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47-2001
Abstract: ANG-S21 TGF4124-EPU
Text: 4124 TGF4124-EPU • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz
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TGF4124-EPU
TGF4124-EPU
47-2001
ANG-S21
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86185
Abstract: No abstract text available
Text: PLL Frequency Synthesizer ADF4108 Data Sheet FEATURES GENERAL DESCRIPTION 8.0 GHz bandwidth 3.2 V to 3.6 V power supply Separate charge pump supply VP allows extended tuning voltage in 3.3 V systems Programmable, dual-modulus prescaler 8/9, 16/17, 32/33, or 64/65
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20-lead
ADF4108
ADF4108
detectorDF4108BCPZ-RL7
EVAL-ADF4108EBZ1
012508-B
CP-20-1
86185
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RO4850
Abstract: 113 marking code transistor ROHM A004R MCH155 MGA-655T6 c1005* MCH155 MCR 052 PIN 100
Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’
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MGA-655T6
MGA-655T6
AV02-0322EN
RO4850
113 marking code transistor ROHM
A004R
MCH155
c1005* MCH155
MCR 052 PIN 100
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Fujitsu GaAs FET application note
Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was
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fcs64
magS22
angS22
Fujitsu GaAs FET application note
atc100a
FLL810
Hp 2564
FLL810IQ-3C
IMT-2000
S03A2750N1
RFP 1026 resistor
fujitsu x band amplifiers
"15 GHz" power amplifier 41dBm
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Untitled
Abstract: No abstract text available
Text: TGF4118 18 mm Discrete HFET August 5,2008 • • • • • ο4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm
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TGF4118
TGF4118
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ANGS11
Abstract: No abstract text available
Text: MMA-022028 2 - 20 GHz Fully Matched Distributed Power Amplifier 28 dBm Power Amplifier Preliminary Data Sheet August 2007 Features: • Usable Frequency Range: 2-20 GHz • Excellent RF Performance: o 28 dBm P1dB o 7 dB Gain • MTTF > 100 years @ 85°C ambient temperature
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MMA-022028
MMA-022028
ANGS11
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RO4850
Abstract: 113 marking code transistor ROHM C1005C0G1H4R7C c1005* MCH155 toko 4828 PHEMT marking code a 0322E GaAs 0.15 pHEMT A004R MCH155
Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’
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MGA-655T6
MGA-655T6
AV02-0322EN
RO4850
113 marking code transistor ROHM
C1005C0G1H4R7C
c1005* MCH155
toko 4828
PHEMT marking code a
0322E
GaAs 0.15 pHEMT
A004R
MCH155
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Untitled
Abstract: No abstract text available
Text: Ceramic Packaged GaAs Power pHEMT AM030WX-BH-R March 2010 Rev 0 DC-10 GHz DESCRIPTION AMCOM’s AM030WX-BH-R is part of the BH series of GaAs pHEMTs. This part has a total gate width of 6mm. The AM030WX-BH-R is designed for high power microwave applications, operating up to 10 GHz. The
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AM030WX-BH-R
DC-10
AM030WX-BH-R
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Untitled
Abstract: No abstract text available
Text: Low Phase Noise, Fast Settling, 6 GHz PLL Frequency Synthesizer ADF4196 Data Sheet FEATURES GENERAL DESCRIPTION Fast settling, fractional-N PLL architecture Single PLL replaces ping-pong synthesizers Frequency hop across GSM band in 5 s with phase settled
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ADF4196
ADF4196
CP-32-2)
ADF4196BCPZ
ADF4196BCPZ-RL7
EVAL-ADF4193EBZ1
EVAL-ADF4193EBZ2
32-Lead
GSM1800)
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Untitled
Abstract: No abstract text available
Text: High Frequency Divider/PLL Synthesizer ADF4007 Data Sheet FEATURES GENERAL DESCRIPTION 7.5 GHz bandwidth Maximum PFD frequency of 120 MHz Divide ratios of 8, 16, 32, or 64 2.7 V to 3.3 V power supply Separate charge pump supply VP allows extended tuning
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ADF4007
ADF4007
ADF4007BCPZ
ADF4007BCPZ-RL
ADF4007BCPZ-RL7
EVAL-ADF4007EBZ1
20-Lead
CP-20-6
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16166
Abstract: RLAS2026A Box393
Text: RLAS2026A 2000 ~ 2600 MHz Super Low Noise Amplifier1 RLAS2026A is an ultra low noise figure, wideband, and unconditionally stable SMT packaged amplifier with exceptionally low input and output VSWR. The amplifier offers typical 0.60 dB noise figure, 20 dB input and output return losses, 26.0 dB
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RLAS2026A
RLAS2026A
MIL-STD-202
MILSTD-883.
16166
Box393
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micronetics M3500
Abstract: No abstract text available
Text: RF PLL Frequency Synthesizers ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet FEATURES GENERAL DESCRIPTION ADF4110: 550 MHz; ADF4111: 1.2 GHz; ADF4112: 3.0 GHz; ADF4113: 4.0 GHz 2.7 V to 5.5 V power supply Separate charge pump supply VP allows extended tuning
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ADF4110/ADF4111/ADF4112/ADF4113
ADF4110:
ADF4111:
ADF4112:
ADF4113:
ADF4110
CP-20-1
RU-16
micronetics M3500
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Untitled
Abstract: No abstract text available
Text: AVDD DVDD VP RSET CPGND REFERENCE REFIN CLK DATA LE 24-BIT INPUT REGISTER R COUNTER PHASE FREQUENCY DETECTOR R COUNTER LATCH LOCK DETECT FUNCTION LATCH A, B COUNTER LATCH CHARGE PUMP CP CURRENT SETTING 1 CURRENT SETTING 2 CPI3 CPI2 CPI1 CPI6 CPI5 CPI4 HIGH Z
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24-BIT
ADF41020
ADSP-BF527
ADuC7020
MO-220-WGGD-1.
08-16-2010-B
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Untitled
Abstract: No abstract text available
Text: Low Phase Noise, Fast Settling, 6 GHz PLL Frequency Synthesizer ADF4196 Data Sheet FEATURES GENERAL DESCRIPTION Fast settling, fractional-N PLL architecture Single PLL replaces ping-pong synthesizers Frequency hop across GSM band in 5 s with phase settled
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ADF4196
ADF4196
MO-220-VHHD-2
32-Lead
CP-32-2)
ADF4196BCPZ
ADF4196BCPZ-RL7
EV-ADF4196SD1Z
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Untitled
Abstract: No abstract text available
Text: Low Phase Noise, Fast Settling PLL Frequency Synthesizer ADF4193 Data Sheet FEATURES GENERAL DESCRIPTION New, fast settling, fractional-N PLL architecture Single PLL replaces ping-pong synthesizers Frequency hop across GSM band in 5 µs with phase settled
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ADF4193
ADF4193
D05328-0-2/13
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ADF4106SCPZ-EP
Abstract: ADF4106 E4440A adf4106e
Text: PLL Frequency Synthesizer ADF4106-EP FEATURES GENERAL DESCRIPTION 6.0 GHz bandwidth 2.7 V to 3.3 V power supply Separate charge pump supply VP allows extended tuning voltage in 3 V systems Programmable dual-modulus prescaler 8/9, 16/17, 32/33, 64/65 Programmable charge pump currents
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ADF4106-EP
ADF4106-EP
ADF4106-SRU-EP
ADF4106-SRU-EP-R7
ADF4106-SCPZ-EP
ADF4106-SCPZ-EP-R7
16-Lead
20-Lead
ADF4106SCPZ-EP
ADF4106
E4440A
adf4106e
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Untitled
Abstract: No abstract text available
Text: TGF4118-EPU 18 mm Discrete HFET 4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4118-EPU RF Performance at F = 2.3 GHz
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OCR Scan
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TGF4118-EPU
TGF4118-EPU
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PDF
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Untitled
Abstract: No abstract text available
Text: TGF4124-EPU 4124 24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5% at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz
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TGF4124-EPU
TGF4124-EPU
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