AN7514 Search Results

Contextual Info: New Quad 1W BTL Audio Power IC AN7514SH • Overview Unit : mm 14.00±0.10 6.90 (1.00) (5.65) 0.60±0.05 (3.70) 6.10±0.10 8.10±0.20 29 56 (2.45) 0 ~ 8° 0.50±0.10 0.10 ● Minimum external components. • Built-in output oscillation prevention capacitor and resistor.

Common rail piezo injector driver

Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
Contextual Info: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or

Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge

Contextual Info: FDB075N15A_F085 N-Channel Power Trench MOSFET 150V, 110A, 7.5mΩ D D Features „ Typ rDS on = 5.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263 FDB SERIES Applications

FDD8870

Abstract: FDU8870 M038 FDD8870-F085
Contextual Info: FDD8870_F085 / FDU8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDB8442

Abstract: FDB8442-F085
Contextual Info: FDB8442_F085 N-Channel PowerTrench MOSFET 40V, 80A, 2.9mΩ Applications „ Typ rDS on = 2.1mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 181nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

FDD5810-F085

Abstract: FDD5810 FDD5810_F085
Contextual Info: FDD5810_F085 N-Channel Logic Level Trench MOSFET 60V, 36A, 27m: Features Applications „ RDS ON = 22m: Typ.), VGS = 5V, ID = 29A „ Motor / Body Load Control „ Qg(5) = 13nC (Typ.), VGS = 5V „ ABS Systems „ Low Miller Charge „ Powertrain Management

FDP8442

Contextual Info: FDP8442_F085 N-Channel PowerTrench MOSFET 40V, 80A, 3.1mΩ Applications „ Typ rDS on = 2.3mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 181nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

TC11E

Abstract: 19E-9 FDP8870 RS21E
Contextual Info: FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

FDB8444

Contextual Info: FDB8444_F085 N-Channel PowerTrench MOSFET 40V, 70A, 5.5mΩ Features Applications „ Typ rDS on = 3.9mΩ at VGS = 10V, ID = 70A „ Automotive Engine Control „ Typ Qg(TOT) = 91nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

FDP047AN

Abstract: FDH047AN08A0 FDI047AN08A0 FDP047AN08A0 FDH047AN08 FDH047AN FDP047
Contextual Info: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

C7 MARKING Fairchild

Contextual Info: FDM3622 N-Channel PowerTrench MOSFET tm 100V, 4.4A, 60m: General Description Features r DS ON = 44m: (Typ.), VGS = 10V, ID = 4.4A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

fds8878

Contextual Info: FDS8878 N-Channel PowerTrench MOSFET tm 30V, 10.2A, 14mΩ Features General Description „ rDS on = 14mΩ, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDB8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

d 42030 transistor

Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A

Contextual Info: FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r DS ON = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

19E-9

Contextual Info: FDP8870 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

FDB16AN08A0

Abstract: FDP16AN08A0 260uH
Contextual Info: FDP16AN08A0 / FDB16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 58A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 58A • 42V Automotive Load Control • Qg(tot) = 28nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge

Contextual Info: FDP3682 N-Channel PowerTrench MOSFET 100 V, 32 A, 36 mΩ Features Applications • RDS on = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 32 A • Consumer Appliances • QG(tot) = 18.5 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit

Contextual Info: FDP16AN08A0 N-Channel PowerTrench MOSFET 75 V, 58 A, 16 mΩ Features Applications • RDS on = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 58 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Battery Protection Circuit

FDD2582

Abstract: m067 82855
Contextual Info: N-Channel PowerTrench MOSFET 150V, 21A, 66mΩ Features Applications • r DS ON = 58mΩ (Typ.), VGS = 10V, ID = 7A • DC/DC converters and Off-Line UPS • Qg(tot) = 19nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

FDP3682

Abstract: FDB3682 TO-263 Package
Contextual Info: N-Channel PowerTrench MOSFET 100V, 32A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 32A • DC/DC converters and Off-Line UPS • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

FDP2552

Abstract: FDB2552 25E5 tube marking m062 25E5
Contextual Info: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs