AMPLIFIER 32 OHM Search Results

Contextual Info: SPA-100-32-003-SMA DATA SHEET 500 MHz to 10 GHz, Broadband Amplifier with 25 dBm, 32 dB Gain and SMA SPA-100-32-003-SMA is a broadband GaAs PHEMT MMIC-based 300 mW coaxial low noise amplifier, operating in the 0.5 to 10 GHz frequency range. The amplifier offers 32 dBm of P1dB and 32 dB small signal gain, with the excellent gain

Contextual Info: SLNA-030-32-30-SMA DATA SHEET 2.5 dB NF Low Noise Amplifier Operating From 0.009 MHz to 3 GHz with 32 dB Gain, 16 dBm P1dB and SMA SLNA-030-32-30-SMA is a wideband low noise RF coaxial amplifier operating in the 9 kHz to 3 GHz frequency range. The amplifier offers 2.5 dB noise figure,

Contextual Info: 25 dBm P1dB, 500 MHz to 10 GHz, Medium Power Broadband Amplifier, 32 dB Gain, 33 dBm IP3, 3 dB NF, SMA TECHNICAL DATA SHEET PE15A3005 PE15A3005 is a broadband GaAs PHEMT MMIC-based 300 mW coaxial low noise amplifier, operating in the 0.5 to 10 GHz frequency range. The amplifier offers 32 dBm of P1dB and 32 dB small signal gain, with the excellent gain flatness of ±1 dB,

HMC268LM1

Contextual Info: HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz FEBRUARY 2001 Features General Description SMT mmWAVE PACKAGE The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier LNA in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1

HMC261LM1

Contextual Info: HMC261LM1 MICROWAVE CORPORATION SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz V01.0900 FEBRUARY 2001 AMPLIFIERS 1 Features General Description SMT mmWAVE PACKAGE The HMC261LM1 is a GaAs MMIC distributed amplifier in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true

GaN amplifier

Abstract: Aeroflex GaN power amplifier PA001040-32
Contextual Info: Broadband Standard Product PA001040-32 GaN High Efficiency Driver Amplifier Broadband Power 100MHz to 4GHz February 9, 2009 www.aeroflex.com/bband DESCRIPTION FEATURES The PA001040-32 is a broadband high efficiency driver amplifier in a compact package and is ideal for use as a stable gain block, IF

Contextual Info: RDA1005L RDA1005LDigital Controlled Variable Gain Amplifier 50MHz to 4000MHz, 6 Bit DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT Features AMPIN 1 GND 2 GND CLK 29 DATA 30 LE GND 31 GND GND 32 AMPOUT GND Package: MCM, 32-Pin, 5.2mm x 5.2mm

Contextual Info: Subsystems & Accessories 32 x 64 Matrix Features o o o o o o 32 input fan-out to 64 outputs Frequency Band: 3.4-4.2 GHz 50 Ohm impedance SMA Connectors GaAs MMIC Switching design. RS422 control 2way div/ amplifier In 1 - 16 64 cables SP2T Output 1 16 x 32

Contextual Info: y2 k n ew ! HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz JUNE 2000 Features General Description SMT mmWAVE PACKAGE The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier LNA in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1

HMC143

Abstract: HMC203 HMC258 HMC264 HMC265 HMC281
Contextual Info: HMC281 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz FEBRUARY 2001 V02.0500 Features General Description EXCELLENT NOISE FIGURE: 2.5 dB The HMC281 chip is a three stage GaAs MMIC Low Noise Amplifier LNA which covers the frequency range of 18 to 32 GHz. The chip can

Contextual Info: HMC281 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz FEBRUARY 2000 V01.0300 Features General Description EXCELLENT NOISE FIGURE: 2.5 dB The HMC281 chip is a three stage GaAs MMIC Low Noise Amplifier LNA which covers the frequency range of 18 to 32 GHz. The chip can

Contextual Info: SmartStep Subsystems 32 x 64 Matrix Features o o o o o o 32 input fan-out to 64 outputs Frequency Band: 3.4-4.2 GHz 50 Ohm impedance SMA Connectors GaAs MMIC Switching design. RS422 control 2way div/ amplifier SP2T In 1 - 16 64 cables Output 1 16 x 32 Fan Out

Contextual Info: '9 9 n ew ! HMC281 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz SEPTEMBER 1999 Features General Description EXCELLENT NOISE FIGURE: 2.5 dB The HMC281 chip is a three stage GaAs MMIC Low Noise Amplifier LNA which covers the frequency range of 18 to 32 GHz. The chip can

15 watt power amplifier " 15 GHz"

Abstract: HMMC-5032 HMMC-5040 HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram Die Attach and Bonding Guidelines
Contextual Info: Agilent HMMC-5032 17.7-32 GHz Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. It provides 22 dBm of output power

Contextual Info: TAT3814 5-300 MHz Variable Gain Return Path Amplifier Applications Return Path Amplifier System Amplifier Line Amplifier DOCSIS Return Path VGA Bonded Channel Cable Modem Return Path 6x6 mm 40 Pin leadless SMT Package General Description 31 V3ADJ 32 GND 33 GND

Contextual Info: TAT3814 5-300 MHz Variable Gain Return Path Amplifier Applications Return Path Amplifier System Amplifier Line Amplifier DOCSIS Return Path VGA Bonded Channel Cable Modem Return Path 6x6 mm 40 Pin leadless SMT Package General Description 31 V3ADJ 32 GND 33 GND

Contextual Info: 2.5 dB NF, 16 dBm P1dB, 0.009 MHz to 3 GHz, Low Noise Amplifier, 32 dB Gain, SMA TECHNICAL DATA SHEET PE15A1007 PE15A1007 is a wideband low noise RF coaxial amplifier operating in the 9 kHz to 3 GHz frequency range. The amplifier offers 2.5 dB typical noise figure, 16 dBm of P1dB and high 32 dB minimum small signal gain with gain flatness of ±1.5dB maximum.

Contextual Info: 2.5 dB NF, 16 dBm P1dB, 0.009 MHz to 3 GHz, Low Noise Amplifier, 32 dB Gain, SMA TECHNICAL DATA SHEET PE15A1007 PE15A1007 is a wideband low noise RF coaxial amplifier operating in the 9 kHz to 3 GHz frequency range. The amplifier offers 2.5 dB noise figure, 16 dBm of P1dB and high 32 dB minimum small signal gain with gain flatness of ±1.5dB maximum. This

HMC414MS8G

Contextual Info: HMC414MS8G v02.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE

HMC414MS8G

Contextual Info: HMC414MS8G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE

Contextual Info: HMC414MS8G v02.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE

Contextual Info: MAAM-011139 Driver Amplifier 27.5 - 33.4 GHz Rev. V2 VG1 VD1 VG2 VD2 N/C • 3 Stage Driver Amplifier for 28/32 GHz Bands • 21 dB Gain • 32 dBm Output Third Order Intercept OIP3 • 20 dBm Output P1dB • Variable Gain with Adjustable Bias • Lead-Free 4 mm 24 Lead PQFN Package

Contextual Info: TDA7050TD Linear ICs Dual-Channel Audio Power/Output Amplifier status Outp Pwr Min.140m @R load (Ohms)32 Upper 3dB Frequency (Hz) AV (dB) Min.32Â Input Resistance Min. (Ohms)1.0M THD Max. (%) Quies. Pwr (W) Nom. Supp (V)3.0 Minimum Operating Temp (øC)0

Contextual Info: TDA7050TN Linear ICs Dual-Channel Audio Power/Output Amplifier status Outp Pwr Min.140m @R load (Ohms)32 Upper 3dB Frequency (Hz) AV (dB) Min.32Â Input Resistance Min. (Ohms)1.0M THD Max. (%) Quies. Pwr (W) Nom. Supp (V)3.0 Minimum Operating Temp (øC)0