AMPLIFICATION AUDIO Search Results
AMPLIFICATION AUDIO Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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AV-THLIN2RCAM-005 |
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Amphenol AV-THLIN2RCAM-005 Thin-line Single RCA Coaxial Cable - RCA Male / RCA Male (Coaxial Digital Audio Compatible) 5ft | Datasheet | ||
COMBOAUDIODISPLAY |
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DRV8662 Piezo Haptic Driver with Integrated Boost Converter |
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OPA689MJD |
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Military Wideband, High Gain Voltage Limiting Amplifer 8-CDIP SB -55 to 125 |
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THS4041IDRQ1 |
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Automotive Catalog 165-MHz C-Stable High Speed Amplifer 8-SOIC -40 to 85 |
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AMPLIFICATION AUDIO Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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diodes V3F
Abstract: mitsubishi weekly code mitsubishi production year 47K variable resistor M52765FP TP10 mitsubishi Lot No. Year code
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M52765FP G465098 75MHz, 25MHz, diodes V3F mitsubishi weekly code mitsubishi production year 47K variable resistor M52765FP TP10 mitsubishi Lot No. Year code | |
AD8668ARZ
Abstract: AD8648 AD8662 AD8666 AD8668 MO-187-AA MS-012-AA RU-14 AD8666ARMZ-R2
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AD8666/AD8668 AD8666 AD8666, 14-Lead AD8668ARZ AD8648 AD8662 AD8666 AD8668 MO-187-AA MS-012-AA RU-14 AD8666ARMZ-R2 | |
2SC5471
Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
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2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor | |
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification |
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NESG2101M16 NESG2101M16 M8E0904E | |
NESG2101M16
Abstract: NESG2101M16-T3 NESG2101M16-T3-A
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NESG2101M16 M8E0904E NESG2101M16 NESG2101M16-T3 NESG2101M16-T3-A | |
NESG2101M16
Abstract: NESG2101M16-T3
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NESG2101M16 NESG2101M16 NESG2101M16-T3 | |
microphone preamp
Abstract: preamp mic ic AN-450 LM4830 LM4830M LM4830N M24B N24A
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LM4830 LM4830 microphone preamp preamp mic ic AN-450 LM4830M LM4830N M24B N24A | |
12v 100w AUDIO AMPLIFIER CIRCUIT
Abstract: 12v 100w amplifier 100w 12v POWER AMPLIFIER 100w audio amplifier pcb 100w 12V audio amplifier circuit 12v 100w amp audio amplifier 100W 5kw power amplifier 50W linear power amplifier 100W AUDIO AMP
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PC1353 PC1353 DIP-14H Typical80dB) 400Hz 25kHz 10mVrms 50x50 12v 100w AUDIO AMPLIFIER CIRCUIT 12v 100w amplifier 100w 12v POWER AMPLIFIER 100w audio amplifier pcb 100w 12V audio amplifier circuit 12v 100w amp audio amplifier 100W 5kw power amplifier 50W linear power amplifier 100W AUDIO AMP | |
transistor T1J
Abstract: NESG2101M05-T1 NESG2101M05
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NESG2101M05 PU10190EJ02V0DS transistor T1J NESG2101M05-T1 NESG2101M05 | |
transistor T1J
Abstract: T1J marking
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NESG2101M05 NESG2101M05 transistor T1J T1J marking | |
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification |
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NESG2101M16 PU10395EJ01V0DS | |
sta338
Abstract: digital to analog tv converter ic STA321 4x50W 2.1 ch audio amplifiers Karaoke Processor IC STA558 STA330 STA331 STA510F
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BRFFX0108 sta338 digital to analog tv converter ic STA321 4x50W 2.1 ch audio amplifiers Karaoke Processor IC STA558 STA330 STA331 STA510F | |
Contextual Info: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification |
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NESG2101M05 R09DS0036EJ0300 | |
Contextual Info: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification |
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NESG2101M05 R09DS0036EJ0300 | |
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RG508
Abstract: PC1353 v10-20 400HZ if audio amplifier 16 dip Datasheet V10-20 25KHZ DIP-14H I-10A
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PC1353 PC1353 DIP-14H Typical80dB) 30mVrms 400Hz 25kHz 10mVrms 50x50 QW-R111-002 RG508 v10-20 400HZ if audio amplifier 16 dip Datasheet V10-20 25KHZ DIP-14H I-10A | |
AN-450
Abstract: LM4830 LM4830M LM4830N M24B N24A
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LM4830 LM4830 is959 AN-450 LM4830M LM4830N M24B N24A | |
sta339
Abstract: STA369BWS STA539 STA339BW sta520b sta533 200w audio amplifier circuit diagram Karaoke Processor IC audio output ic sharp micro component system STA533WF
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STA369BWS BRFFX0210 sta339 STA539 STA339BW sta520b sta533 200w audio amplifier circuit diagram Karaoke Processor IC audio output ic sharp micro component system STA533WF | |
sta339
Abstract: STA339BW STA335ML STA339BWS STA559BWS STA520B STA533 audio limiter ic STA321 STA529
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BRFFX0309 sta339 STA339BW STA335ML STA339BWS STA559BWS STA520B STA533 audio limiter ic STA321 STA529 | |
Contextual Info: UTC PC1353 LINEAR INTEGRATED CIRCUIT TV AUDIO PROCESSING CIRCUIT DESCRIPTION UTC PC1353 is designed for TV SIF signal amplification and audio power amplification purpose. It includes SIF amplifier, FM, frequency discriminator, DC volume control, 2.4W power amplifier and voltage regulator. |
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PC1353 PC1353 DIP-14H Typical80dB) QW-R111-002 | |
marking VB
Abstract: NPN Silicon Epitaxial Planar Transistor 2SC3930W 2SA1532 marking code vc sot sot-323 transistor marking code 15 AM SOT-323
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2SC3930W 2SA1532. OT-323 BL/SSSTF036 marking VB NPN Silicon Epitaxial Planar Transistor 2SC3930W 2SA1532 marking code vc sot sot-323 transistor marking code 15 AM SOT-323 | |
NEC JAPAN
Abstract: NESG3031M14 NESG3031M14-T3
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NESG3031M14 NESG3031M1conductor NEC JAPAN NESG3031M14 NESG3031M14-T3 | |
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification |
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NESG2031M05 NESG2031M05 NESG2031M05-T1 | |
AN-450
Abstract: C1996 LM4830 LM4830M LM4830N M24B N24A
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LM4830 LM4830 AN-450 C1996 LM4830M LM4830N M24B N24A | |
nec 2501
Abstract: ic nec 2501 NESG250134 2501 NEC
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NESG250134 NESG250134-Tconductor nec 2501 ic nec 2501 NESG250134 2501 NEC |