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    AM29F060

    Abstract: Am29F080
    Text: PRELIMINARY Am29F080 Advanced 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory iw IÌ DISTINCTIVE CHARACTERISTICS • 5.0 Volt ±10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards


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    PDF Am29F080 40-pin 44-pin AM29F060

    AM29F060

    Abstract: AM29F060B
    Text: •1H?•L:f*1!f»Av AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35(un process technology


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    PDF Am29F080B Am29F080 preve-539-6490 -eO3296 0H276-6O3211 AM29F060 AM29F060B

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    Abstract: X886 Am29F08QB AM29F060
    Text: AM D3 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation —- Minimizes system level power requirements ■ Manufactured on 0.35 |jm process technology


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    PDF Am29F080B Am29F080 -l276-803299 55M-6/98-0 21503D BQQ-57Q-G48 CHINA TV uoc X886 Am29F08QB AM29F060