77106
Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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L7805CV morocco
Abstract: 2N3055 HV2 STMicroelectronics to-220 date code MOROCCO STMicroelectronics pentawatt date code mosfet morocco STMicroelectronics date code TO-220 2n3055 malaysia L7805CV LM324N
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG/03/368 "Discrete and Standard ICs Group":Products in Through-Hole packages:Lead Free component connections 2003/11/27 PCN DSG/03/368 Product Family /Commercial Product All product in Through Hole packages Type Of Change
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DSG/03/368
10-Feb-2004
27-Nov-2003
L7805CV morocco
2N3055 HV2
STMicroelectronics to-220 date code
MOROCCO
STMicroelectronics pentawatt date code
mosfet morocco
STMicroelectronics date code TO-220
2n3055 malaysia
L7805CV
LM324N
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3p4j
Abstract: d1833 3P4J-ZK 3p4j thyristor
Text: DATA SHEET THYRISTORS 3P4J,3P4J-Z,3P4J-ZK 3 A MOLD THYRISTOR The 3P4J, 3P4J-Z, and 3P4J-ZK are a P gate all diffused mold type Thyristor granted 3 A On-state Average Current TC = 103°C with rated voltages up to 400 V. <R> FEATURES • For a small and light package, miniaturization of a set is easy.
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IEC60947-4-2
Abstract: CELPAC IEC60947-4-3 AC51 SIT865390
Text: S/TRI/SIT865390/C/28/06/2004 celpac page 1 / 3 GB Three Phase Solid State Relays SIT865390 • Solid State Relay for all type of loads with integrated heatsink • DIN rail or panel mounting 24-520 VAC - 3 x 50A AC-51 : 3 x 22 ARMS (AC-53 : 3 x 12 ARMS)
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S/TRI/SIT865390/C/28/06/2004
SIT865390
AC-51
AC-53
1500A2s
10-30VAC
EN60950
IEC60947-4-3
5000A2s
20000A2s
IEC60947-4-2
CELPAC
IEC60947-4-3
AC51
SIT865390
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22ARMS
Abstract: IEC60947 IEC60947-4-2 IEC60947-4-3 AC51
Text: S/TRI/SIT865990/C/28/06/2004 celpac page 1 / 3 GB Three Phase Solid State Relays SIT865990 24-520 VAC - 3 x 50A AC-51 : 3 x 22 ARMS (AC-53 : 3 x 12 ARMS) • Solid State Relay for all type of loads with integrated heatsink • DIN rail or panel mounting
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S/TRI/SIT865990/C/28/06/2004
SIT865990
AC-51
AC-53
1500A2s
90-240VAC
EN60950
IEC60947-4-3
5000A2s
20000A2s
22ARMS
IEC60947
IEC60947-4-2
IEC60947-4-3
AC51
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IEC60947-4-2
Abstract: IEC60947-4-3 AC51
Text: celpac S/TRI/SIT865390/A/13/01/2003 page 1 / 3 GB SIT865390 Three Phase Solid State Relays 24-520 VAC - 3 x 50A AC-51 : 3 x 22 ARMS (AC-53 : 3 x 12 ARMS) • Solid State Relay for all type of loads with integrated heatsink • DIN rail or panel mounting
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S/TRI/SIT865390/A/13/01/2003
SIT865390
AC-51
AC-53
1500A2s
10-30VAC
EN60950
IEC60947-4-3
5000A2s
20000A2s
IEC60947-4-2
IEC60947-4-3
AC51
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Thyristor catalog
Abstract: EIA-468-B EIA-468 THYRISTOR PRODUCT CATALOG 202 N thyristor AP 4812 EIA-481-2 L401E6 RS-296 M3 DO-214
Text: M3 Packing Options M3 Packing options include: • Bulk Pack • Reel Pack RP • Ammo Pack (AP) • Tube Pack (TP) • Embossed Carrier (RP) See “Package Type and Packing Options” on page M3-2. 2004 Littelfuse, Inc. Thyristor Product Catalog Sample Instructions for Choosing a
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L401E6"
L401E6
L401E6
EIA-481-1
DO-15X
DO-35
RS-296
DO-15X
DO-35
Thyristor catalog
EIA-468-B
EIA-468
THYRISTOR PRODUCT CATALOG
202 N thyristor
AP 4812
EIA-481-2
M3 DO-214
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din IEC 68
Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
Text: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types
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IXTD08N100P-1A
Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types
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Untitled
Abstract: No abstract text available
Text: FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Rectifier Diode and Thyristor Chips Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling
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30kV thyristor
Abstract: Thyristor 6kV
Text: Product – Specification 1st April 2003 ISSUE 15 TYPE CJS SERIES High Power Resistors - Custom Capability TYPE CJS SERIES KEY FEATURES The CJS is a new family of mineral insulated resistors. Developed as damping resistors for High Voltage G.T.O. thyristor control
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thyristor Q 720
Abstract: fuse thyristor GR-1089 TISP4070L3BJ TISP4350L3BJ ER diode SMB
Text: TISP4070L3BJ, TISP4350L3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 1999, Power Innovations Limited, UK AUGUST 1999 — REVISED NOVEMBER 1999 FCC PART 68 AND UL 1950 OVERVOLTAGE PROTECTORS ● MODEM Protection against: — FCC Part 68 Type A & B surge
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TISP4070L3BJ,
TISP4350L3BJ
TISP4070L3BJ
thyristor Q 720
fuse thyristor
GR-1089
TISP4070L3BJ
TISP4350L3BJ
ER diode SMB
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TISP4070L3BJ
Abstract: TISP4350L3BJ
Text: TISP4070L3BJ, TISP4350L3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS AUGUST 1999 FCC PART 68 AND UL 1950 OVERVOLTAGE PROTECTORS ● MODEM Protection against: — FCC Part 68 Type A & B surge — UL 1950, Clause 6. power cross — CSA 22.2 No. 950, Clause 6. power cross
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TISP4070L3BJ,
TISP4350L3BJ
TISP4070L3BJ
TISP4070L3BJ
TISP4350L3BJ
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Untitled
Abstract: No abstract text available
Text: TISP4070L3BJ, TISP4350L3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 1999, Power Innovations Limited, UK AUGUST 1999 FCC PART 68 AND UL 1950 OVERVOLTAGE PROTECTORS ● MODEM Protection against: — FCC Part 68 Type A & B surge — UL 1950, Clause 6. power cross
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TISP4070L3BJ,
TISP4350L3BJ
TISP4070L3BJ
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kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
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DCR2950W
Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
igbt types 6000v
igbt sinewave inverter
thyristor phase control 600v to 1600v
DCR2630Y
Tag 225-600
PT85QWX45
HVDC plus
bi-directional switches IGBT
GTO hvdc thyristor
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Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
Tag 225-600
IGBT cross-reference
SCR GTO
fast diode 3000V
tag 200-600
522.500. 5 x 20 mm
HVDC plus
scr phase control battery charger
esm 30 450 v
GTO thyristor Application notes
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G1500N
Abstract: No abstract text available
Text: WESTCODE An Date:- 19 Feb, 2004 Data Sheet Issue:- 1 IXYS Company Anode-Shorted Gate Turn-Off Thyristor Type G1500NC250 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 2500 V VRSM Non-repetitive peak off-state voltage, (note 1)
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G1500NC250
500x10
G1500NC250
G1500N
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CBV2
Abstract: HN27C301
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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BYX38-600
Abstract: germanium rectifier diode byx38 diode germanium varactor diode BYX38
Text: TYPE DESIGNATION J^ PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits — , multiples of such devices and semiconductor chips. "Although not all type numbers accord with the Pro Electron system, the following explanation is given
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BYX38-600
BZY93-C7V5
BYX38
BZY93
germanium rectifier diode
byx38 diode
germanium varactor diode
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flash 32 Pin PLCC 16mbit
Abstract: 398x
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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CBV2
Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Rectifier Diode and Thyristor Chips Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling
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1999IXYS
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BT thyristor
Abstract: thyristor BT thyristor bt 3A
Text: a ix Y S FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Pow er switches (IG BT, M O S F E T , BJT, G T O ) for applications in electronics are only a s go o d a s their a sso ciated free wheeling diodes. At increasing switching frequencies, the pro
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