ALL TYPE OF THYRISTOR Search Results

CBV2

Abstract: HN27C301
Contextual Info: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

77106

Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Contextual Info: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

BYX38-600

Abstract: germanium rectifier diode byx38 diode germanium varactor diode BYX38
Contextual Info: TYPE DESIGNATION J^ PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits — , multiples of such devices and semiconductor chips. "Although not all type numbers accord with the Pro Electron system, the following explanation is given

flash 32 Pin PLCC 16mbit

Abstract: 398x
Contextual Info: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

CBV2

Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Contextual Info: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

L7805CV morocco

Abstract: 2N3055 HV2 STMicroelectronics to-220 date code MOROCCO STMicroelectronics pentawatt date code mosfet morocco STMicroelectronics date code TO-220 2n3055 malaysia L7805CV LM324N
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG/03/368 "Discrete and Standard ICs Group":Products in Through-Hole packages:Lead Free component connections 2003/11/27 PCN DSG/03/368 Product Family /Commercial Product All product in Through Hole packages Type Of Change

3p4j

Abstract: d1833 3P4J-ZK 3p4j thyristor
Contextual Info: DATA SHEET THYRISTORS 3P4J,3P4J-Z,3P4J-ZK 3 A MOLD THYRISTOR The 3P4J, 3P4J-Z, and 3P4J-ZK are a P gate all diffused mold type Thyristor granted 3 A On-state Average Current TC = 103°C with rated voltages up to 400 V. <R> FEATURES • For a small and light package, miniaturization of a set is easy.

IEC60947-4-2

Abstract: CELPAC IEC60947-4-3 AC51 SIT865390
Contextual Info: S/TRI/SIT865390/C/28/06/2004 celpac page 1 / 3 GB Three Phase Solid State Relays SIT865390 • Solid State Relay for all type of loads with integrated heatsink • DIN rail or panel mounting 24-520 VAC - 3 x 50A AC-51 : 3 x 22 ARMS (AC-53 : 3 x 12 ARMS)

22ARMS

Abstract: IEC60947 IEC60947-4-2 IEC60947-4-3 AC51
Contextual Info: S/TRI/SIT865990/C/28/06/2004 celpac page 1 / 3 GB Three Phase Solid State Relays SIT865990 24-520 VAC - 3 x 50A AC-51 : 3 x 22 ARMS (AC-53 : 3 x 12 ARMS) • Solid State Relay for all type of loads with integrated heatsink • DIN rail or panel mounting

IEC60947-4-2

Abstract: IEC60947-4-3 AC51
Contextual Info: celpac S/TRI/SIT865390/A/13/01/2003 page 1 / 3 GB SIT865390 Three Phase Solid State Relays 24-520 VAC - 3 x 50A AC-51 : 3 x 22 ARMS (AC-53 : 3 x 12 ARMS) • Solid State Relay for all type of loads with integrated heatsink • DIN rail or panel mounting

Thyristor catalog

Abstract: EIA-468-B EIA-468 THYRISTOR PRODUCT CATALOG 202 N thyristor AP 4812 EIA-481-2 L401E6 RS-296 M3 DO-214
Contextual Info: M3 Packing Options M3 Packing options include: • Bulk Pack • Reel Pack RP • Ammo Pack (AP) • Tube Pack (TP) • Embossed Carrier (RP) See “Package Type and Packing Options” on page M3-2. 2004 Littelfuse, Inc. Thyristor Product Catalog Sample Instructions for Choosing a

din IEC 68

Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
Contextual Info: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

Contextual Info: FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Rectifier Diode and Thyristor Chips Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling

BT thyristor

Abstract: thyristor BT thyristor bt 3A
Contextual Info: a ix Y S FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Pow er switches (IG BT, M O S F E T , BJT, G T O ) for applications in electronics are only a s go o d a s their a sso ciated free­ wheeling diodes. At increasing switching frequencies, the pro­

30kV thyristor

Abstract: Thyristor 6kV
Contextual Info: Product – Specification 1st April 2003 ISSUE 15 TYPE CJS SERIES High Power Resistors - Custom Capability TYPE CJS SERIES KEY FEATURES The CJS is a new family of mineral insulated resistors. Developed as damping resistors for High Voltage G.T.O. thyristor control

thyristor Q 720

Abstract: fuse thyristor GR-1089 TISP4070L3BJ TISP4350L3BJ ER diode SMB
Contextual Info: TISP4070L3BJ, TISP4350L3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 1999, Power Innovations Limited, UK AUGUST 1999 — REVISED NOVEMBER 1999 FCC PART 68 AND UL 1950 OVERVOLTAGE PROTECTORS ● MODEM Protection against: — FCC Part 68 Type A & B surge

TISP4070L3BJ

Abstract: TISP4350L3BJ
Contextual Info: TISP4070L3BJ, TISP4350L3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS AUGUST 1999 FCC PART 68 AND UL 1950 OVERVOLTAGE PROTECTORS ● MODEM Protection against: — FCC Part 68 Type A & B surge — UL 1950, Clause 6. power cross — CSA 22.2 No. 950, Clause 6. power cross

Contextual Info: TISP4070L3BJ, TISP4350L3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 1999, Power Innovations Limited, UK AUGUST 1999 FCC PART 68 AND UL 1950 OVERVOLTAGE PROTECTORS ● MODEM Protection against: — FCC Part 68 Type A & B surge — UL 1950, Clause 6. power cross

DCR2950W

Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DCR2950W

Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

G1500N

Contextual Info: WESTCODE An Date:- 19 Feb, 2004 Data Sheet Issue:- 1 IXYS Company Anode-Shorted Gate Turn-Off Thyristor Type G1500NC250 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 2500 V VRSM Non-repetitive peak off-state voltage, (note 1)