BLS3135-20
Abstract: microwave transistor 03 SOT422A sot422
Text: DISCRETE SEMICONDUCTORS 0ÂTÂ Sin] H T BLS3135-20 Microwave power transistor Product specification Philips Sem iconductors 2000 Feb 01 PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A • S uitable fo r short and m edium pulse applications
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BLS3135-20
OT422A
BLS3135-20
microwave transistor 03
SOT422A
sot422
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transistor top 222
Abstract: LTE21025R SC15 marking code 439
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Self-aligned process entirely ion implanted
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LTE21025R
OT440A
OT440A
OT440A.
transistor top 222
LTE21025R
SC15
marking code 439
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Untitled
Abstract: No abstract text available
Text: ^ 7 SGS-THOMSON V # ^D g^ [iL[l TO(MD(gi MJE3439-SGS3439 MJE3440-SGS3440 HIGH VOLTAGE TRANSISTOR D E S C R IP T IO N The MJE3439, MJE3440, SGS3439 and SGS3440 are NPN silicon epitaxial planar transistors respec tively in TO -126 and SOT-82 plastic package. They
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MJE3439-SGS3439
MJE3440-SGS3440
MJE3439,
MJE3440,
SGS3439
SGS3440
OT-82
JE3440
S3439
JE3439
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microwave transistor 03
Abstract: sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor
Text: DISCRETE SEMICONDUCTORS PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 03 PHILIPS
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PPC5001T
OT447A
microwave transistor 03
sot447a
transistor marking code AL
PPC5001T
SC15
transistor 335
npn microwave power transistor
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il6ac
Abstract: led 7 doan HC40S1A bc55a Analog multiplexer 4051 YJ 162A S691 oscillator DUAL led 7 doan HC69SA cb 4040
Text: 2. H IG H GATE SPEED CMOS N AN O NOR AND OR INVERTER, BUFFER EXCLUCIVE O R / NOR SCHIMITT TRIGGER MULTI FUNCTION LEVELSHIFTER FLIP-FLOP SELECTION G U ID E HCOOA HCTOOA HC03A HC10A HC20A HC30A HC132A HC133A HC02A HCT02A HC27A HC4002A HC4078A HC08A HCT08A HC09A HC11A HC21A
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HC03A
HC10A
HC20A
HC30A
HC132A
HC133A
HC02A
HCT02A
HC27A
HC4002A
il6ac
led 7 doan
HC40S1A
bc55a
Analog multiplexer 4051
YJ 162A
S691 oscillator
DUAL led 7 doan
HC69SA
cb 4040
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2N5551
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING • Low curren t max. 300 mA PIN • High voltage (max. 160 V). APPLICATIONS DESCRIPTION 1 co lle cto r 2 base 3 e m itte r • S w itching and am plification in high voltage applications
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2N5550;
2N5551
SC-43
2N5551
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Untitled
Abstract: No abstract text available
Text: H C H BC857A / BC857B / BC857C F /M I L D S E M IC O N D U C T O R BC857A BC857B BC857C SOT-23 ’ B M a rk : 3 E / 3 F / 3 G PNP General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 68.
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BC857A
BC857B
BC857C
OT-23
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BFT92
Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures
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BFT92W
OT323
BFT92W
BFT92.
OT323.
711002b
BFT92
"MARKING CODE W1*"
GHz PNP transistor
marking G SOT323 Transistor
SOT323 Marking 87
SOT323 WM
marking L2 SOT23 6
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BD139
Abstract: BD136 transistors bd136 bd136 N
Text: Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING • High current max. 1.5 A PIN • Low voltage (max. 80 V). 1 e m itte r 2 collector, connected to metal part of m ounting surface 3 base APPLICATIONS
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BD136;
BD138;
BD140
BD135,
BD139.
BD138
BD139
BD136
transistors bd136
bd136 N
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transistor c 458
Abstract: BD132 transistor Bd132 BD131 power transistor transistor TO-126 Outline Dimensions power transistor sot32 c 458 c transistor
Text: DISCRETE SEMICONDUCTORS BD132 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 04 PHILIPS Philips Semiconductors
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BD132
O-126;
BD131.
MAM272
O-126
transistor c 458
BD132
transistor Bd132
BD131
power transistor
transistor TO-126 Outline Dimensions
power transistor sot32
c 458 c transistor
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transistor marking fl
Abstract: BF822W
Text: Philips Semiconductors Product specification NPN high-voltage transistors BF820W; BF822W FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional com m unication equipment.
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BF820W;
BF822W
BF820W
OT323)
BF822W
BF820ALUE
transistor marking fl
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55ay
Abstract: AL SOT-89 BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX52-16 BCX53 BCX54
Text: • b b S B ^ l 0D2MbD5 55ß BIAPX N AMER PHILIPS/DISCRETE BCX51 BCX52 BCX53 b?E T> SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended fo r applications in thick and thin -film circuits. These transistors are intended fo r general purposes as well as fo r use in driver staqes
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BCX51
BCX52
BCX53
BCX54,
BCX55
BCX56
BCX52
55ay
AL SOT-89
BCX51
BCX51-10
BCX51-16
BCX52-10
BCX52-16
BCX53
BCX54
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN medium frequency transistor BFR54 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 1 5 V ). APPLICATIONS DESCRIPTION 1 em itter 2 base 3 collector • Active probes • Frequency m ultipliers
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BFR54
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • AM m ixers • IF am plifiers in A M /FM receivers.
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BF240
SC-43
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 e m itte r • V ery high DC current gain (min. 3 0000). 2 base 3 co lle cto r APPLICATIONS
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BC517
BC516.
SC-43
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector • High DC current gain (min. 10000). 2 base 3 em itter APPLICATIONS • High gain am plification.
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MPSA14
MPSA64.
SC-43
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PMBTA64
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP Darlington transistor PMBTA64 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 base • High DC current gain (min. 10000). 2 e m itte r 3 co lle cto r APPLICATIONS
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PMBTA64
BTA14.
PMBTA64
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low curren t max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 co lle cto r • High DC current gain (min. 10000). 2 base 3 e m itte r APPLICATIONS
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MPSA64
PSA14.
SC-43
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transistor cc 5551
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low curren t max. 300 mA PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 co lle cto r 2 base 3 e m itte r • G eneral purpose sw itching and am plification
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2N5401
SC-43
transistor cc 5551
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP general purpose transistor PMBTA56 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • G eneral purpose sw itching and am plification, e.g.
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PMBTA56
PMBTA06.
BTA56
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T346
Abstract: 2P transistor
Text: Philips Semiconductors Product specification 2PB709A PNP general purpose transistor FEATURES PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • G eneral purpose sw itching and am plification.
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2PB709A
B601A
MAM322
SC-59)
OT346
T346
2P transistor
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marking code VV transistors
Abstract: PNP TRANSISTOR "SOT89" marking aa
Text: Philips Semiconductors Product specification PNP medium power transistors BCX51 ; BCX52; BCX53 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Medium power general purposes
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BCX51
BCX52;
BCX53
BCX54,
BCX55
BCX56.
BCX51
BCX51-10
BCX51-16
BCX52
marking code VV transistors
PNP TRANSISTOR "SOT89" marking aa
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Untitled
Abstract: No abstract text available
Text: • bb53T31 0Q24b77 744 APX N AUER PHILIPS/DISCRETE L7E BF721 BF723 J> SILICON EPITAXIAL TRANSISTORS PNP transistors in a microminiature plastic envelope intended for application in class-B video output stages in colour television receivers, and general purpose high voltage circuits.
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bb53T31
0Q24b77
BF721
BF723
BF720
BF722
0Q24b7T
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BSS63
Abstract: bss63 bm on pnp low saturation transistor sot23 BSS64 MV TRANSISTOR SOT23 sot23 marking JR Philips BSS63
Text: Philips Semiconductors Product specification PNP high-voltage transistor BSS63 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 100 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • H igh-voltage general purpose
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BSS63
BSS64.
bss63 bm on
pnp low saturation transistor sot23
BSS64
MV TRANSISTOR SOT23
sot23 marking JR
Philips BSS63
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