AK006M1 Search Results

Contextual Info: GaAs MMIC SPST FET Switch Chip EUAlpha With Integral Driver DC-6 GHz AK006L1-00, AK006M1-00, AK006R1-00 Features • Multiple Use Options: Low Loss Reflective; High Isolation Non-Reflective; High Isolation Reflective ■ Low D.C. Power Consumption - 2 0 mW

AK006M1-10

Abstract: AK006M1-01
Contextual Info: GaAs IC SPST Switch With Integral Driver Non-Reflective DC–6 GHz AK006M1-01, AK006M1-10 Features • Integral Driver ±5 V Supply Voltages ■ High Isolation, Non-Reflective -01 0.220 5.59 mm 0.210 (5.33 mm) 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package

Contextual Info: GaAs 1C SPST Switch With Integral Driver Non-Reflective DC-6 GHz ESAlpha AK006M1-01, AK006M1-10 F eat ur e s • Integral Driver ±5 V Supply Voltages ■ High Isolation, Non-Reflective -01 0.220 5.59 mm 0.210 (5.33 mm) ■0.130 (3.30 mm) TYP. 0.130 (3.30 mm) TYP.

Contextual Info: Preliminary GaAs 1C SPST Switch With Integral Driver Non-Reflective DC-6 GHz Features -93 • Integral Driver ± 5 V Supply Voltages ■ High Isolation, Non-Reflective ■ Broadband D C -6 G H z ra EBAlpha AK006M1-93 0.160 0.140 ■ 0.100 • 0.020 • 0.000

Contextual Info: GaAs 1C SPST Switch Chip With Integral Driver DC-6 GHz ESAlpha AK006L1-00, AK006M1-00, AK006R1-00 Chip Outline Features •St ■ On-Chip Integral Driver CO T- CM Tt O 1- CO CD iO Ò Ò Ò o Ò ■ CMOS and TTL Compatible ■ Non-Reflective or Reflective Option

Contextual Info: GaAs IC SPST Switch Chip With Integral Driver DC-6 GHz ESAlpha AK006L1-00, AK006M1-00, AK006R1-00 Chip Outline F eat ur e s • On-Chip Integral Driver ■ CMOS and TTL Com patible ■ Non-Reflective or Reflective Option ■ Fully Passivated De s c ri p t io n

SN6337

Abstract: AK006M1-93
Contextual Info: GaAs IC SPST Switch With Integral Driver Non-Reflective DC–6 GHz AK006M1-93 Features • Integral Driver ±5 V Supply Voltages -93 0.160 0.140 ■ High Isolation, Non-Reflective ■ Broadband DC–6 GHz 0.100 ■ Small Low Cost “Chip on Board” Package

AK006L1-00

Abstract: AK006M1-00 AK006R1-00
Contextual Info: Preliminary GaAs IC SPST Switch Chip With Integral Driver DC–6 GHz AK006L1-00, AK006M1-00, AK006R1-00 • CMOS and TTL Compatible 0.910 0.134 ■ On-Chip Integral Driver 0.661 Chip Outline 0.420 Features 1.095 0.995 ■ Non-Reflective or Reflective Option

Contextual Info: GaAs 1C SPST Switch With Integral Driver Non-Reflective DC-6 GHz ESAlpha AK006M1-93 Features -93 • Integral Driver ±5 V Supply Voltages ■ High Isolation, Non-Reflective re 0.160 ■ 0.140 ■ s ■ Broadband D C -6 GHz 0 .1 0 0 ■ Small Low Cost “Chip on Board” Package

Contextual Info: GaAs MMIC SPST FET Switch With Integral Driver Non-Reflective DC-6 GHz ESA lpha AK006M1-01, AK006M1-10, AK004M1-11 Features • Integral Driver +5V, - 5 V Bias Voltages C M O S & TTL Compatible ■ Low D.C. Power Consumption - 2 0 mW ■ High Isolation ■

Contextual Info: GaAs 1C SPST Switch With Integral Driver Non-Reflective DC-6 GHz ESAlpha AK006M1-93 Features 3 • Integral Driver ±5 V Supply Voltages ■ High Isolation, Non-Reflective re 0.160 ■ 0.140 ■ ■ Broadband D C -6 GHz 0.100 ■ Small Low Cost “Chip on Board” Package

Contextual Info: GaAs 1C SPST Switch With Integral Driver Non-Reflective DC-6 GHz ESAlpha AK006M1-01, AK006M1-10 Features -01 • Integral Driver ±5 V Supply Voltages ■ High Isolation, Non-Reflective 0.220 5.59 mm 0.210 (5.33 mm) -0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP.

Contextual Info: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16

DSB3665-02

Contextual Info: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C

Contextual Info: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■

Contextual Info: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■

Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias

SMS1526-10

Contextual Info: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity

Contextual Info: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages

Contextual Info: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability

Contextual Info: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ^A Low Differential Phase Between Paths Meets M IL -S T D -88 3 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description The A D 004T2-00 is a GaAs 4 Port FET switch

AF002C1-32

Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Contextual Info: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power: