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    AI 723 Search Results

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    AI 723 Price and Stock

    SiTime Corporation SIT8008AI-72-33E-24.000000G

    MEMS OSC XO 24.0000MHZ H/LV-CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT8008AI-72-33E-24.000000G 1
    • 1 $1.41
    • 10 $1.41
    • 100 $1.41
    • 1000 $1.41
    • 10000 $1.41
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    Avnet Americas SIT8008AI-72-33E-24.000000G Reel 12 Weeks 250
    • 1 -
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    • 1000 $0.76387
    • 10000 $0.76387
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    Newark SIT8008AI-72-33E-24.000000G Cut Tape 465 1
    • 1 $1.49
    • 10 $1.45
    • 100 $1.34
    • 1000 $1.27
    • 10000 $1.27
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    SiTime Corporation SIT1604AI-72-33E-50.000000G

    MEMS OSC XO 50.0000MHZ LVCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT1604AI-72-33E-50.000000G Cut Tape 1
    • 1 $1.18
    • 10 $1.18
    • 100 $1.18
    • 1000 $1.18
    • 10000 $1.18
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    SIT1604AI-72-33E-50.000000G Digi-Reel 1
    • 1 $1.18
    • 10 $1.18
    • 100 $1.18
    • 1000 $1.18
    • 10000 $1.18
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    SIT1604AI-72-33E-50.000000G Reel 250
    • 1 -
    • 10 -
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    • 1000 $0.9432
    • 10000 $0.9432
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    Rochester Electronics SIT1604AI-72-33E-50.000000G 195 1
    • 1 $0.9389
    • 10 $0.9389
    • 100 $0.8826
    • 1000 $0.7981
    • 10000 $0.7981
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    SiTime Corporation SIT1602AI-72-33E-48.000000D

    STANDARD FREQUENCY, LOW POWER OSCILLATOR, -40 TO 85C, 2016, 25PPM, 3.3V, 48MHZ, OE, SMD, NRND - Tape and Reel (Alt: SIT1602AI-72-33E-48.000000D)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT1602AI-72-33E-48.000000D Reel 12 Weeks 3,000
    • 1 -
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    • 10000 $0.64853
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    SiTime Corporation SIT8008AI-72-33E-8.000000E

    PROGRAMMABLE, LOW POWER OSCILLATOR, -40 TO 85C, 2016, 25PPM, 3.3V, 8MHZ, OE, SMD, NRND - Tape and Reel (Alt: SIT8008AI-72-33E-8.000000E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT8008AI-72-33E-8.000000E Reel 12 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.70032
    • 10000 $0.70032
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    SiTime Corporation SIT8008AI-72-33S-25.000000D

    PROGRAMMABLE, LOW POWER OSCILLATOR, -40 TO 85C, 2016, 25PPM, 3.3V, 25MHZ, ST, SMD, NRND - Tape and Reel (Alt: SIT8008AI-72-33S-25.000000D)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT8008AI-72-33S-25.000000D Reel 12 Weeks 3,000
    • 1 -
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    AI 723 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    common rail pressure sensor bosch

    Abstract: BOSCH 0 206 001 010 IBS ai 5118A bosch pressure sensor common rail Bosch Common Rail Sensor bosch 0 205 001 40 Klockner-Moeller GmbH AI 186 N DISTANCE MEASUREMENT
    Text: IBS AI – AI3 – AI / I – AI3 / I INTERBUS-S Data Sheet Analog Input Modules with 4 Channels Data Sheet Revision A 12/1995 Product Description The IBS AI, AI3, AI/I and AI3/I analog input modules acquire current and voltage signals on each of the 4 channels.


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    12-bit common rail pressure sensor bosch BOSCH 0 206 001 010 IBS ai 5118A bosch pressure sensor common rail Bosch Common Rail Sensor bosch 0 205 001 40 Klockner-Moeller GmbH AI 186 N DISTANCE MEASUREMENT PDF

    ZN 3055 transistor

    Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
    Text: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K


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    AI203 OT-32, O-126) O-220 O-220, ZN 3055 transistor Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622 PDF

    271-14.eps

    Abstract: TS271
    Text: SGS-THOMSON ¡y TS271C/I/M PROGRAMMABLE SINGLE CMOS OPERATIONAL AMPLIFIERS N DIPS Plastic Package D S08 (Plastic Micropackage) ORDER CODES Part Number Temperature Range Pac tage N D TS271C/AC/BC TS271 l/AI/BI 0°C, +70°C -40°C, +105°C • • • TS271M/AM/BM


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    TS271C/I/M UA776 TS271C/AC/BC TS271 TS271M/AM/BM TS271ACN TS271C 130nA 271-14.eps PDF

    HARRIS IRFD110

    Abstract: IRF510
    Text: H AR RIS SEIUCOND SECTOR bflE D • 430EB71 O D S lD ib ■ HAS PCF110W HARRIS a 41b SEMICONDUCTOR P January1993 ^ j F 1 1 O D N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-Ti-NI


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    430EB71 PCF110W ry1993 Mll-Std-750, IRF510 IRFD110 IRFU110 IRFF110 2N6782 PCF110W HARRIS IRFD110 IRF510 PDF

    Untitled

    Abstract: No abstract text available
    Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Small diameter Wide resistance range Good resolution Linear tapers Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control Initial Electrical Characteristics1 Standard Resistance ohms to 1 megohm


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    Untitled

    Abstract: No abstract text available
    Text: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • ■ ■ ■ ■ Small diameter Wide resistance range Good resolution Linear tapers Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control Initial Electrical Characteristics1 Standard Resistance ohms to 1 megohm


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    NT101

    Abstract: bourns potentiometer 321
    Text: *R oH VE S CO AV R M AI SIO PL LA N IA BL S NT E Features • Small diameter Non-RoHS versions are available, but not recommended for new designs. ■ Wide resistance range ■ Good resolution ■ Linear tapers ■ Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control


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    h20 mosfet

    Abstract: No abstract text available
    Text: HARRI S SENI COND SECTOR bôE D • 4302271 0DS111E HAFRFRIS 4TT ■ HAS PCF210W F2 1OD S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-NI


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    0DS111E PCF210W Mil-Std-750, IRF610 IRFD210 IRFF210 2N6784 PCF210D 1-800-4-HARRIS h20 mosfet PDF

    transistor N43

    Abstract: harris 34
    Text: HARRIS SENICOND SECTOR g ì H W bôE D • 4302271 OGSlllfl ÌO? ■ HAS PCF420W a r r is F4SP SE MI C ON D UC T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization • Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni


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    PCF420W Mil-Std-750, IRF820 IRFF420 IRFU420 PCF420W PCF420D 1-800-4-HARRIS transistor N43 harris 34 PDF

    475 50K 030

    Abstract: No abstract text available
    Text: *R oH VE S CO AV R M AI SIO PL LA N IA BL S NT E Features • Small diameter ■ Wide resistance range ■ Good resolution ■ Linear tapers ■ Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control Initial Electrical Characteristics1 Standard Resistance Range .100 ohms to 1 megohm


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Small diameter Wide resistance range Good resolution Linear tapers Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control Initial Electrical Characteristics1 Standard Resistance ohms to 1 megohm


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Small diameter Wide resistance range Good resolution Linear tapers Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control Initial Electrical Characteristics1 Standard Resistance ohms to 1 megohm


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: *R oH VE S CO AV R M AI SIO PL LA N IA BL S NT E Features • Small diameter ■ Wide resistance range ■ Good resolution ■ Linear tapers ■ Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control Initial Electrical Characteristics1 Standard Resistance Range .100 ohms to 1 megohm


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Tas droits stricter««* m e re *. Reproduction ou communication a des Sen M tn fle sous quelque forme que ce so* sane autorisation écrits du propietain. Propriété d e 8ERG QÜTOOM CS. Droits de reproduction BERG ELECTRONICS NC . AI right» «*ric% reserved. Reproduction or issue to third porta


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    I0/13/99 V71561 V94048 0/13/9S PDF

    IRF9530 Harris

    Abstract: No abstract text available
    Text: HARRIS £ * H A SEmCOND R R SECTOR 430 2 27 1 o a s i i a a 54T bflE D PCF12P10W PCF12P10D I S SEMI C ON DU C T O R P-Channel MOS Chip January 1993 Die Features • HAS Passivated • Contact Metallization - Gate and Source - Aluminum - Drain-Tri-Metal AI-TI-Ni)


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    PCF12P10W PCF12P10D MII-Std-750, RFP12P10 IRF9530 IRF9130 2N6849 PCF12P10D 1-800-4-HARRIS IRF9530 Harris PDF

    R433T

    Abstract: r2332 R3110P R1117 R3324 R133L R742 R5115 R4110A R4337
    Text: ,JIANN MA ELECTRONICS CO LED LAMP 54E D 4*175305 ODODODS D • RECTANGULAR TYPE LENS COLOR RECTANGULAR TYPE 5x5m/m 5x5m/m ai <*8 5^5m/m a»a^-Ñl h L Í6 -9 7 - ia 3 25x5m/m 25x5m/m 25x5m/m JJL IE 2x5m/m “Ä 3 Color Diffused TYP 1 Color Transparent fTYP 2)


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    P25-13 R1110 R2110 R3110 R3110P R4110 R5110 R7110 R1310 R2310 R433T r2332 R3110P R1117 R3324 R133L R742 R5115 R4110A R4337 PDF

    RFD8P05SM

    Abstract: No abstract text available
    Text: HARRIS SEHICOND SECTOR bfiE D • 4302E71 00510^5 070 ■ PCF8P05W P^^FSPOSD HARRIS S E M I C O N D U C T O R P-Channel MOS Chip January 1993 Features • HAS Die Passivated • Contact Metallization - Gate and Source - Aluminum Silicon • Drain • Tri-Metal AI-Ti-NI


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    4302E71 PCF8P05W MII-Std-750, RFD8P05 RFD8P05SM RFP8P05 PCF8P05D 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEflICOND SECTOR bflE D • 430B271 Q0S10A5 T21 ■ £15 H A R R IS W PCFC40W 4QIP S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features • HAS Die Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni


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    430B271 Q0S10A5 PCFC40W MII-Std-750, IRFBC40 IRFPC40 IRFAC40 PCFC40D 1-800-4-HARRIS PDF

    PA710

    Abstract: No abstract text available
    Text: PA710 Series 5-200 MHz. Cascadable Amplifier -PHO£W< M /C /?O m i/£ Corp. Typical Performance Curves -B-55°C +25°C - A - +85°C G ai n vs. F r e q u e n c y See Short Form Chart and Mechanical Section for available outline drawings. N F v s . F requency


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    PA710 -B--55 from-55 PDF

    Untitled

    Abstract: No abstract text available
    Text: «•/et a» Mt-i ma •o[f. “8 \ ss 0" 0*0 . ï s is 58 - «g H ÿï ♦ï » ël II 00 CUPS! 000 0 0 0 S JESLJmA oior 0 1 1 1 ® 000 0® ® 00 ® 000 000 000 T T PROCHJCT NO D E S C R IP T IO N SEE TABLE -DIM AI .010/723 a scalci i^isilmiaj.LQi.LDLiaj.inJ.ieiiaj.teilsi.Lai.isL^


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    002/lT PDF

    PSNK

    Abstract: CK3300
    Text: DATA COM MUNICATIONS A Nl I<AI l\ S I R I A U M CK3300 4 Digit Clock Radio Circuit FEATURES • ■ ■ ■ • ■ ■ • ■ ■ ■ ■ 4 D igits plus colons LED d ire ct duplex drive No display-IC interface com ponents No radio fre q u en cy interference problem s


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    CK3300 50/60Hz --50/60Hz PSNK CK3300 PDF

    RFL10N15

    Abstract: 330 e57
    Text: H A RR IS S E N I C O N D SECT OR bflE D • 430 E57 1 G D S 1 QT 4 t,43 ■ HARRIS HAS P C F 10N 15W P^jF1 0N15D SEMICONDUCTOR January 1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal AI-TI-Ni


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    0N15D Mii-Std-750, RFM10N15 RFP10N15 RFL10N15 PCF10N15W PCF10N15D 122x122 1-800-4-HARRIS RFL10N15 330 e57 PDF

    NE850R5

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device


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    NE850R5 NE850R599 CODE-99 PDF

    63000-000

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device


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    NE850R5 E850R599 CODE-99 63000-000 PDF