NGSB120075HS0CA
Abstract: C100 MM-214
Text: 5 Sonnenschein – SB12/75 A data sheet Terminal: Drawing: Specifications: Part numbers not valid for North America, use type for ordering! Exide type designation Nom. Voltage V SB12/75 A 12 Nom. capacity C100 Nom.
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SB12/75
75Vpc
NGSB120075HS0CA
NGSB120075HS0CA
C100
MM-214
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12M250
Abstract: ABB inverter motor fault code ptc s1450 MC4046 REC310PE72 10 amp 12 volt solar charger circuits SOLAR INVERTER 1000 watts circuit diagram
Text: Contents System Design. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Batteries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 Grid-Tie Systems. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
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C100
Abstract: NGSB120060HS0CA
Text: 5 Sonnenschein – SB12/60 A data sheet Terminal: Drawing: Specifications: Part numbers not valid for North America, use type for ordering! Exide type designation Nom. Voltage Nom. V capacity C100 Nom. capacity
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SB12/60
75Vpc
NGSB120060HS0CA
C100
NGSB120060HS0CA
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lead acid batteries exide
Abstract: NGSO1206D6HS0SA NGSO120230HS0CA NGS6021200HS0FA NGSB060330HS0CA NGSO120060HS0CA NGS6020300HS0FA NGS6020240HS0FA NGSB120130HS0CA NGS6021400HS0FA
Text: Industrial Batteries – Network Power Sonnenschein Solar Safe storage capacity for renewable energy. Specifications The compact alternative for smaller solar applications. Sonnenschein Solar batteries are specially designed for small to medium performance requirements in
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NXSSOTEPDF00106
lead acid batteries exide
NGSO1206D6HS0SA
NGSO120230HS0CA
NGS6021200HS0FA
NGSB060330HS0CA
NGSO120060HS0CA
NGS6020300HS0FA
NGS6020240HS0FA
NGSB120130HS0CA
NGS6021400HS0FA
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HN27C4096AG-12
Abstract: HN27C4096ACC-10 HN27C4096AG-10 HN27C4096A HN27C4096ACC-12 HN27C4096ACC-15 HN27C4096AG-15 CC44 Hitachi DSA00314
Text: HN27C4096AG/ACC Series 262144-word x 16-bit CMOS UV Erasable and Programmable ROM Description The Hitachi HN27C4096AG/ACC is a 4-Mbit ultraviolet erasable and electrically programmable ROM, featuring high speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry
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HN27C4096AG/ACC
262144-word
16-bit
HN27C4096A
16-bit
HN27C4096A
cerdip-40pin
JLCC-44pin.
ns/120
HN27C4096AG-12
HN27C4096ACC-10
HN27C4096AG-10
HN27C4096ACC-12
HN27C4096ACC-15
HN27C4096AG-15
CC44
Hitachi DSA00314
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HN27C4096ACC-10
Abstract: HN27C4096AG-10 HN27C4096ACC-12 HN27C4096AG-12 HN27C4096A HN27C4096ACC-15 HN27C4096AG-15 Hitachi DSA00777
Text: HN27C4096AG/ACC Series 262144-word x 16-bit CMOS UV Erasable and Programmable ROM ADE-203Rev. 0.0 Dec. 1, 1995 Description The Hitachi HN27C4096AG/ACC is a 4-Mbit ultraviolet erasable and electrically programmable ROM, featuring high speed and low power dissipation. Fabricated on advanced fine process and high speed
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HN27C4096AG/ACC
262144-word
16-bit
ADE-203Rev.
HN27C4096A
cerdip-40pin
JLCC-44pin.
HN27C4096ACC-10
HN27C4096AG-10
HN27C4096ACC-12
HN27C4096AG-12
HN27C4096ACC-15
HN27C4096AG-15
Hitachi DSA00777
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HN27C4096ACP
Abstract: HN27C4096ACP-12 HN27C4096ACP-15 HN27C4096CP Hitachi DSA00314
Text: HN27C4096ACP Series 262144-word x 16-bit CMOS One Time Programmable ROM ADE-203-240B Z Rev. 2.0 Jun. 22, 1995 Description The Hitachi HN27C4096ACP is a 4-Mbit one time programmable ROM, featuring high speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry technique, the HN27C4096ACP
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HN27C4096ACP
262144-word
16-bit
ADE-203-240B
HN27C4096ACP
44-pin
ns/150
HN27C4096ACP-12
HN27C4096ACP-15
HN27C4096CP
Hitachi DSA00314
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HN27C4000
Abstract: HN27C4000FP HN27C4000FP-12 HN27C4000FP-15 HN27C4096 Hitachi DSA00777
Text: HN27C4000FP Series 524288-Word x 8-Bit/262144-Word × 16-Bit CMOS One Time Programmable ROM ADE-203-310B Z Rev. 2.0 Jun. 22, 1995 Description The Hitachi HN27C4000FP is a 4-Mbit one time programmable ROM that is organized either as 524288word × 8-bit or as 262144-word × 16-bit, featuring extra-high speed burst mode that gives two times
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HN27C4000FP
524288-Word
8-Bit/262144-Word
16-Bit
ADE-203-310B
524288word
262144-word
16-bit,
HN27C4096
HN27C4000
HN27C4000FP-12
HN27C4000FP-15
Hitachi DSA00777
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HN27C4000
Abstract: HN27C4000FP HN27C4000FP-12 HN27C4000FP-15 HN27C4096 Hitachi DSA00314
Text: HN27C4000FP Series 524288-Word x 8-Bit/262144-Word × 16-Bit CMOS One Time Programmable ROM ADE-203-310B Z Rev. 2.0 Jun. 22, 1995 Description The Hitachi HN27C4000FP is a 4-Mbit one time programmable ROM that is organized either as 524288word × 8-bit or as 262144-word × 16-bit, featuring extra-high speed burst mode that gives two times faster 4word or 8-byte serial access than normal. And also high speed and fast programming are served as well as the
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HN27C4000FP
524288-Word
8-Bit/262144-Word
16-Bit
ADE-203-310B
524288word
262144-word
16-bit,
HN27C4096
HN27C4000
HN27C4000FP-12
HN27C4000FP-15
Hitachi DSA00314
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HN27C4000G Series
Abstract: HN27C4000 HN27C4000G-10 HN27C4000G-12 HN27C4000G-15 HN27C4096 Hitachi DSA00314
Text: HN27C4000G Series 524288-Word x 8-Bit/262144-Word × 16-Bit CMOS UV Erasable and Programmable ROM Description The Hitachi HN27C4000 is a 4-Mbit UV erasable and electrically programmable ROM that is organized either as 524288-word × 8-bit or as 262144-word × 16 bit, featuring extra-high speed burst mode that gives
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HN27C4000G
524288-Word
8-Bit/262144-Word
16-Bit
HN27C4000
262144-word
HN27C4096
HN27C4001.
HN27C4000G Series
HN27C4000G-10
HN27C4000G-12
HN27C4000G-15
Hitachi DSA00314
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HN27C4001TT
Abstract: HN27C4001TT-12 HN27C4001TT-15 Hitachi DSA00314
Text: HN27C4001TT Series 524288-word x 8-bit CMOS One Time Electrically Programmable ROM Description The Hitachi HN27C4001TT is a 512-kword × 8-bit one time electrically programmable ROM, featuring high speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry technique, the
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HN27C4001TT
524288-word
512-kword
32-pin
HN27C4001TT-12
HN27C4001TT-15
Hitachi DSA00314
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HN27C4001TT
Abstract: HN27C4001TT-12 HN27C4001TT-15 Hitachi DSA00777
Text: HN27C4001TT Series 524288-word x 8-bit CMOS One Time Electrically Programmable ROM ADE-203Rev. 0.0 Dec. 1, 1995 Description The Hitachi HN27C4001TT is a 512-kword × 8-bit one time electrically programmable ROM, featuring high speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry
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HN27C4001TT
524288-word
ADE-203Rev.
512-kword
32-pin
HN27C4001TT-12
HN27C4001TT-15
Hitachi DSA00777
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HN27C4001G-10
Abstract: HN27C4001G HN27C4001G-12 HN27C4001G-15 HN27C4001G 32pin Hitachi DSA00314 HN27C4001G Series
Text: HN27C4001G Series 524288-word x 8-bit CMOS UV Erasable and Programmable ROM Description The Hitachi HN27C4001G is a 4-Mbit ultraviolet erasable and electrically programmable ROM, featuring high speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry
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HN27C4001G
524288-word
ns/120
ns/150
HN27C4001G-10
HN27C4001G-12
HN27C4001G-15
HN27C4001G 32pin
Hitachi DSA00314
HN27C4001G Series
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K7A403600M
Abstract: advh
Text: K7A403600M 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft April . 14. 1998 Preliminary 0.1 Change Undershoot spec from -3.0V pulse width ≤20ns to -2.0V(pulse width ≤ t CYC/2)
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K7A403600M
128Kx36
128Kx36-Bit
100-TQFP-1420A
K7A403600M
advh
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ups numeric
Abstract: numeric ups 600 MSB6 MSB05
Text: M SB05 M SB1, M SB2, M SB4, M SB6, M SB8, M SB 10 Mien emiCorp. The diode experts SCOTTSDALE, AZ SANTA ANA. CA For more information call: 602 941-6300 FEA TU R ES • • • • • • • DUAL IN-LINE SUBMINIATURE PACKAGE (DIP] MACHINE tNSERTABLE MOLDED EPOXY PACKAGE
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MILSTD-202,
MSB05,
ups numeric
numeric ups 600
MSB6
MSB05
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S01G
Abstract: No abstract text available
Text: SB16Z POTITRQNC INDWREP BELEyEB THE MM ON THIS DATEREV 9-» PI C a-* 91 D 1-91 91 I a-a 91 Ï □RAMflNS TD K ISL IM L C . SM CE THE TECHNICAL n ra ra iA T D N a b v e n m e o f d -w rg c . t h e u s e r EMPLOTS SUCH INFORMATION AT H3 OÑN DISCRETIDN ANO R B K . PD 5IT m N C M 3U 5TRS3 ASSUUCS ND
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SB16Z
-110J2
00JHD024]
D68Sia
afl10]
36F9300A
S01G
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Untitled
Abstract: No abstract text available
Text: SB16Z DATEREV POTITRQNC I N D W R E P BELEyEB THE M M ON THIS □RAMflNS TD K ISL IM L C . SM CE THE TECHNICAL n ra ra iA T D N a b v e n m e o f d -w r g c . t h e u s e r EM PLOTS SUCH INFORMATION AT H B OHN DISCRETIDN ANO R S K . PD 5 IT m N C M 3U5TRS 3 ASSUUCS ND
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SB16Z
-110J2
D25/J
090-D
DJ151
34ff7
36F9300À
S01G2
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jrm a55
Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Text: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.
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64/256K
RS232C-A
jrm a55
tip 0ff 0401 ANALOG
irf 5630
ko 224 4K tantalum capacitors jrm a45
irf 7408
bt 4840 pinout diagram
A9F7
29 INCH crt tv FBT pinout
chassis 3111 253 3266 2e
jrm A45
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Untitled
Abstract: No abstract text available
Text: LITE«: I SEM ICONDUCTORS SB120 thru SB160 VO LTAG E RANGE 20 TO 60 Volts DARPIER R EC TintíH S C URREN T 1.0 Ampere _I DO-41 FEATURES • Metal-Semiconductor junction with guard ring • Epitaxial construction • 034 .86 7 “ Low forward voltage drop
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SB120
SB160
DO-41
DO-41,
DO-15
D0201AD
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T5LC 1005 256K X 4 SR AM MICRON 256K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE FEATURES • High speed: 20,25,35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE and OE options
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28-Pin
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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T4LS
Abstract: CE5 marking
Text: M I CR ON S E M I C O N D U C T O R INC b?E D • blllS^H GDO^bTH 230 HMRN PRELIMINARY M IC R O N 128K SRAM MODULE X MT4LS12832 32 SRAM MODULE 128Kx 32 SRAM LOW VOLTAGE • • • • • • • • • • High speed: 20*, 25 and 35ns High-density 512KB design
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MT4LS12832
128Kx
512KB
64-Pin
T4LS
CE5 marking
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Untitled
Abstract: No abstract text available
Text: |V|IC=RON 128K S R A M 1 2 8 K x 8 MT5C1008 X 8 SRAM S R A M FEATURES • High speed: 12,15,20 and 25 • Available in 300 mil- and 400 mil-wide SOJ packages • High-performance, low-power, CMOS double-metal process • Single +5V +10% power supply • Easy memory expansion with CE1, CE2 and OE
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MT5C1008
32-Pin
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Untitled
Abstract: No abstract text available
Text: 3.0 V & 3.3 V S u p p ly HM65V8512 Series 524288-Word x 8-Bit High Speed Pseudo Static RAM Description Ordering Information Type No. Access tim e HM65V8512DFP-12 120 ns HM65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns
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HM65V8512
524288-Word
HM65V8512DFP-12
HM65V8512DFP-15
HM65V8512LFP-12
HM65V70
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