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    AGR09060E Search Results

    AGR09060E Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR09060EF Agere Systems FET, 60W, 865MHz-895MHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR09060EF Agere Systems 60 W, 865 MHz - 895 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR09060EU Agere Systems FET, 60W, 865MHz-895MHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR09060EU Agere Systems 60 W, 865 MHz - 895 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF

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    JESD22-C101-A

    Abstract: AGERE JESD22-C101A AGR09060E AGR09060EF AGR09060EU
    Text: Preliminary Product Brief November 2003 AGR09060E 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09060E Hz--895 AGR09060E PB04-010RFPP PB03-084RFPP) JESD22-C101-A AGERE JESD22-C101A AGR09060EF AGR09060EU

    AGR09060EF

    Abstract: AGR09060EU JESD22-A114
    Text: Preliminary Product Brief April 2003 AGR09060E 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09060E Hz--895 AGR09060E PB03-084RFPP PB03-074RFPP) AGR09060EF AGR09060EU JESD22-A114