AFPV Search Results

Contextual Info: HITACHI/ LINEAR DEVICES SbE » HA11517BNT- — • 44^502 001 C H S 3 Q T -7 7 -0 7 -C I Display Deflection Signal Processor The HA11517BNT is a horizontal and vertical diflection signal processing IC for display use constructed in a bipolar IIL process.

Y34A burndy hypress

Abstract: YAZ8C2TC1045 fci burndy y644m dieless hypress Y14MV y644 A69J
Contextual Info: 1 HEJtfTHS'nS" S E 2 1 1915 CONDUCTOR CATALOG NO. CODE AWG NAVY BOLT SIZE YAZV10-2TC10 FIG. NO. DIMENSIONS B ±.04 C ±.04 .69 [18] .36 [9] #10 YAZV10-2TC10-45 E ±.02 .62 [16] 14-10 YAZV10-2TC14-45 2^ 5mm2 STR 4mmi SOL 4mm2 STR H REF. .77 [20] .41 [10]

BAT35

Abstract: SD352 Y60BHU Y35P
Contextual Info: SD35209 I CATALOG <1 NUMBER ^ _|_ I_i_ I_ STRANDED COPPER CONDUCTOR ACCOMMODATED CODE AUG MÍÜTftló NAVY SIZE BOLT SIZE (CU SS 2) DIMENSIONS METRIC BOLT SIZE YA31L-2TC14E2 1/4 YA31L-2NTC516 5/16 .75 [19] .75 YA31-2L 3/8 1.06

122XX-51X0-00

Abstract: 122XX
Contextual Info: 8 7 6 3M Shrunk DeIta R ibbon SL S D R C o n n e c t o r s , 122 Ser ies □80 mm Through -Ho Ie g Right- Angle Receptacle, Shielded DIM. "A" ±.20— [DIM. "A” ±.008] [ (9.55) (.376) 1 n O 15□55 [.6 1 2 O ± □30 ± .0 1 2 ] 6 0 ± 15 [.24 ±.006]

TS-0142

Contextual Info: 7 8 6 4 SL 3 NOTES S D R C o n n e c t o r s , 122 S e r ¡ es Receptacle, o 1— 1 □80 mm Boardmount: g T h r o u g h - H o Ieg Vertical a 3 M S h r u n k D e Ita R ibbon DIM. DIM. M A T E R IAL s INSULATIONS H I G H T E M P E R A T U R E N Y L O N

3M 78-9101-5361-4

Abstract: 789101 ic 381 DIM MCU p 36079 d772
Contextual Info: 4 SL Notes: 1 Material: Body: PBT, UL94V-0 Cover: Nylon Contacts: Copper Alloy 3M LINK CONNECTOR, 2.54mm[.100"], WIREMOUNT, HERMAPHRODITIC, 381 SERIES D 2) Plating: 1.27f f Nickel underplate 0.2//”min. Gold with Lubricant in wiping area Nickel on IDC

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Abstract: Y C DEFLECTION PROCESSOR HITACHI
Contextual Info: HA11517BNT Display Deflection Signal Processor The HA11517BNT is a horizontal and vertical diflection signal processing IC for display use constructed in a bipolar IIL process. Functions • • • • • • Horizontal AFC Horizontal oscillator X-Ray protection

AFTV

Contextual Info: AFPV/AFTV55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The AFPV/AFTV is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a

Contextual Info: SK 95 DGL 126 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Chopper N$OP A$ A$HV NBOP @-I JKL$M 407,- %*8,23.-, -', .6.,+ @- I JK <SR? L$ A$HVI J ; A$0%&M *' I Q &- @Y Diode - Chopper SEMITOP 3 3-phase bridge rectifier +

NEGATIVE Composite Sync

Abstract: afpv HITACHI FILTER HA1151 HA11517BNT horizontal Hitachi Scans-001
Contextual Info: HITACHI/ LINEAR DEVICES abE D HA11517BNT H 44=113502 001 M S B 0 WM T -7 7 -0 7 -II Display Deflection Signal Processor The HA11517BNT is a horizontal and vertical diflection signal processing IC for display use constructed in a bipolar IIL process. Functions

HA11235

Contextual Info: HA11235 Synchronous Signal Processing System Functions • Sync separator • H orizontal autom atic frequency control A FC • H orizontal oscillator • X -ray protector • Vertical oscillator • Vertical driver Features • F ew er external com ponents

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Contextual Info: AFPV/AFTV55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The AFPV/AFTV is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a

78510

Abstract: RD36079
Contextual Info: 4 SL Notes: 1 Material: Body: PBT, U L 9 4 V - 0 C on tacts: Copper Alloy 3 M LINK CONNECTOR, 2.54mm[.100”] BOARDMOUNT, STR AIG H T AND RIGHT ANGLE, 382 SERIES STRAIGHT RIGHT ANGLE D 2) Plating: 2.54//” Nickel underplate 0.2//”min. Gold with Lubricant

Contextual Info: SK 55 DGL 126 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Chopper N$OP A$ A$HV NBOP @-I JKL$M 407,- %*8,23.-, -', .6.,+ @- I JK <SR? L$ A$HVI J ; A$0%&M *' I Q &- @Y Diode - Chopper SEMITOP 3 3-phase bridge rectifier +

Contextual Info: 7 8 6 4 SL 3 NOTES 3M Shrunk DeIta R ibbon □80 mm S u r T a c e Mount: g R ig h t- A n g l e SDR Connectors R e c e p ta c le , D 122 Ser¡es MATERIALS INSULATIONS 14 P IN s PPS 9 26 P IN s COLORS BLACK 9 U L 9 4 V - 0 S h ie ld e d DIM. A" ± .2 0 —

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Abstract: SD347 YAV28-L14 VAV21
Contextual Info: r atAWlHfl <i. SD34764 CfiPPKRA IR C R A fT. M5Z0659 STUO S j~ATALO<* ASH . _ /'NUMBER C A B LE MIL-W-5C3G KJO— SHE c_ *70Z0 1 / 4 yAV2fc-L\ us.:. 5Mfe> YAsV2fe-'-2 2o: V S ,y £ /v ze > - 1» . Y ._ N._ *.010 M IN .4 6 7 .'480 1.847 MAX. .I _ MAX