ADVANCED LPSRAM Search Results
ADVANCED LPSRAM Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPN4800CQH |
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N-ch MOSFET, 150 V, 18 A, 0.048 Ω@10 V, TSON Advance |
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TPN19008QM |
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MOSFET, N-ch, 80 V, 34 A, 0.019 Ohm@10V, TSON Advance |
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TPN12008QM |
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MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance |
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TPN8R408QM |
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MOSFET, N-ch, 80 V, 32 A, 0.0084 Ohm@10V, TSON Advance |
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TPHR7404PU |
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N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOSⅨ-H |
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ADVANCED LPSRAM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary RMLV0416E Series 4Mb Advanced LPSRAM 256k word x 16bit R10DS0205EJ0001 Rev.0.01 2013.09.10 Description The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher |
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RMLV0416E 16bit) R10DS0205EJ0001 144-word 16-bit, 44-pin 48-ball | |
Contextual Info: RMLV0408E Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0206EJ0100 Rev.1.00 2014.2.27 Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher |
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RMLV0408E 512-kword R10DS0206EJ0100 288-word 32-pin | |
Contextual Info: Preliminary RMLV0414E Series 4Mb Advanced LPSRAM 256k word x 16bit R10DS0216EJ0001 Rev.0.01 2013.09.10 Description The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0414E Series has realized higher density, higher |
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RMLV0414E 16bit) R10DS0216EJ0001 144-word 16-bit, 44-pin 45/55ns | |
Contextual Info: RMLV0414E Series 4Mb Advanced LPSRAM 256-kword x 16-bit R10DS0216EJ0100 Rev.1.00 2014.2.27 Description The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0414E Series has realized higher density, higher |
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RMLV0414E 256-kword 16-bit) R10DS0216EJ0100 144-word 16-bit, 44-pin | |
RMLV0408EGSB-4S2
Abstract: RMLV0408EGSB4
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RMLV0408E R10DS0217EJ0001 288-word 32-pin 45/55ns RMLV0408EGSB-4S2 RMLV0408EGSB4 | |
Contextual Info: RMLV0416E Series 4Mb Advanced LPSRAM 256-kword x 16-bit R10DS0205EJ0100 Rev.1.00 2014.2.27 Description The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher |
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RMLV0416E 256-kword 16-bit) R10DS0205EJ0100 144-word 16-bit, 44-pin | |
52-pin uTSOP
Abstract: 52-pin TSOP
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R1LV1616R wordx16bit REJ03C0101-0201Z 16-Mbit 1048576-words 16-bit, 52pin 52-pin uTSOP 52-pin TSOP | |
52-pin uTSOPContextual Info: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0200Z Rev.2.00 2005.11.07 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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V3216R wordx16bit) REJ03C0215-0200Z R1WV3216R 32-Mbit 2097152-words 16-bit, 16Mbit 52-pin uTSOP | |
R1LV1616
Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
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R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls R1WV6416R R1LV1616 ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817 | |
RENESAS tft application notes
Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
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R1LV1616R wordx16bit REJ03C0101-0300Z 16-Mbit 1048576-words 16-bit, 52pin RENESAS tft application notes R1LV1616RBG-5S R1LV1616RSA-5S uTSOP | |
Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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R1LV1616R wordx16bit REJ03C0101-0400Z 16-Mbit 1048576-words 16-bit, 52pin | |
Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls | |
0.4mm pitch BGA
Abstract: 52-pin uTSOP din 6887 R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S
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R1LV1616R wordx16bit REJ03C0101-0400Z 16-Mbit 1048576-words 16-bit, 52pin 0.4mm pitch BGA 52-pin uTSOP din 6887 R1LV1616RBG-5S R1LV1616RSA-5S | |
R1LV1616RBA-5SI
Abstract: R1LV1616R R1LV1616RBA uTSOP
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R1LV1616RBA-5SI wordx16bit REJ03C0340-0001 R1LV1616R 16-Mbit 1048576-words 16-bit, R1LV1616RBA 48balls R1LV1616RBA-5SI uTSOP | |
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Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls | |
Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls | |
52-pin uTSOP
Abstract: 52-pin TSOP 52PTG R1WV3216R RENESAS tft application notes uTSOP
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V3216R wordx16bit) REJ03C0215-0300Z R1WV3216R 32-Mbit 2097152-words 16-bit, 16Mbit 52-pin uTSOP 52-pin TSOP 52PTG RENESAS tft application notes uTSOP | |
uTSOP
Abstract: 52-pin uTSOP
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V3216R wordx16bit) REJ03C0215-0300Z R1WV3216R 32-Mbit 2097152-words 16-bit, 16Mbit uTSOP 52-pin uTSOP | |
Contextual Info: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0300Z Rev.3.00 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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V3216R wordx16bit) REJ03C0215-0300Z R1WV3216R 32-Mbit 2097152-words 16-bit, 16Mbit | |
R1LV0816ASB-5SI
Abstract: R1LV0816A
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R1LV0816ASB 16bit) REJ03C0387-0100 R1LV0816ASB 288-words 16-bit, 44pin 44-pin R1LV0816ASB-5SI R1LV0816A | |
R1LV0808ASB-5Si
Abstract: R1LV08 r1lv0808 R1LV0808ASB 44P3F
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R1LV0808ASB 1024k REJ03C0394-0100 R1LV0808ASB 576-words R1LV08808ASB 44pin 44-pin R1LV0808ASB-5Si R1LV08 r1lv0808 44P3F | |
Contextual Info: Specifications in this document are tentative and may be subject to change. R1LP5256E Series 256Kb Advanced LPSRAM 32k word x 8bit R10DS0070EJ0001 Rev.0.01 2010.12.09 Description The R1LP5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated |
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R1LP5256E 256Kb R10DS0070EJ0001 256-Kbit 768-word 28-pin | |
R1LV0816ASB
Abstract: R1LV0816ASB-5SI R1LV0816A R1LV0816ASB-7SI
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R1LV0816ASB 16bit) REJ03C0387-0100 R1LV0816ASB 288-words 16-bit, 44pin 44-pin R1LV0816ASB-5SI R1LV0816A R1LV0816ASB-7SI | |
Contextual Info: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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R1LV0816ASB 16bit) REJ03C0387-0100 R1LV0816ASB 288-words 16-bit, 44pin 44-pin |