AD 303 TRANSISTOR Search Results

b0375

Abstract: D-12
Contextual Info: MPCFPE32B/AD 12/2001 REV 2 Programming Environments Manual For 32-Bit Implementations of the PowerPC Architecture HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217 1-303-675-2140 or 1-800-441-2447

Contextual Info: MPC603EUM/AD Q2/02 REV 3 MPC603e RISC Microprocessor User’s Manual HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd. SPS, Technical Information Center

SIEMENS 1200

Abstract: siemens dioden bup203 C67078-A4400-A2
Contextual Info: SIEMENS IGBTLeistungstransistoren Bestellnummer Ordering code h LU Typ Type IGBT Power transistors A Gehäuse Package Bild Figure BUP 202 1000 12.0 C67078-A4401-A2 TO-220 AB 8b BUP 203 1000 21.0 C67078-A4402-A2 TO-220 AB 8b BUP 302 1000 12.0 C67078-A4205-A2

930 TSSOP8

Abstract: NTQD6866T1 NTQD6866 NP1F
Contextual Info: NTQD6866 Product Preview HDTMOS3e TSSOP-8 Dual, Common-Drain Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com Features • • • • • • • New Low Profile TSSOP–8 Package Ultra Low RDS on Higher Efficiency Extending Battery Life

mps3646 equivalent

Abstract: transistor N 343 AD MPS3646 ad 303 transistor
Contextual Info: ON Semiconductort Switching Transistor MPS3646 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage

1N916

Abstract: P2N2907A
Contextual Info: ON Semiconductort Amplifier Transistor P2N2907A PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –60 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous

MARKING P2F

Abstract: 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3 p2f sot-223
Contextual Info: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount

MPS6507

Contextual Info: Amplifier Transistor MPS6507 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C

MPS4250

Contextual Info: Transistor MPS4250 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Emitter Voltage VCES –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous

MPS4126

Abstract: MSP41 MCP4126
Contextual Info: Amplifier Transistor MPS4126 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCE –25 Vdc Collector–Base Voltage VCB –25 Vdc Emitter–Base Voltage VEB –4.0 Vdc Collector Current — Continuous IC –200 mAdc Total Power Dissipation @ TA = 25°C

MPS6560

Contextual Info: ON Semiconductort MPS6560 Audio Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C

MPS3906

Contextual Info: ON Semiconductort MPS3906 General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous

MPSA27

Abstract: MPS-A27
Contextual Info: ON Semiconductort Darlington Transistor MPSA27 NPN Silicon MAXIMUM RATINGS Rating Symbol MPSA27 Unit Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C

bc368 equivalent

Abstract: BC368 BC369
Contextual Info: ON Semiconductort NPN BC368, -25 PNP BC369 Amplifier Transistors COLLECTOR 2 COLLECTOR 2 3 BASE 3 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO

1N3195

Abstract: MPS5179
Contextual Info: High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 2.5 Vdc Collector Current — Continuous

BF493S

Abstract: MPSA92 MPSA93
Contextual Info: ON Semiconductort BF493S High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –350 Vdc Collector–Base Voltage VCBO –350 Vdc Emitter–Base Voltage VEBO –6.0 Vdc Collector Current — Continuous

BC372

Abstract: BC373
Contextual Info: BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 2 Vdc Collector Current — Continuous

MPS6428

Contextual Info: Amplifier Transistor MPS6428 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C

BC639RL1

Abstract: BC639ZL1 BC635 BC635RL1 BC635ZL1 BC637 BC639
Contextual Info: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR

BC639

Abstract: BC635 BC635RL1 BC635ZL1 BC637 BC639RL1 BC639ZL1
Contextual Info: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR

MJE18002

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 mpf930a
Contextual Info: ON Semiconductort MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state–of–the–art die

BC549B

Abstract: BC550B TRANSISTOR BC550B NPN Transistor BC549B BC549 BC550
Contextual Info: Low Noise Transistors BC549B,C BC550B,C NPN Silicon MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit Collector–Emitter Voltage VCEO 30 45 Vdc Collector–Base Voltage VCBO 30 50 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 100

Contextual Info: NTGS3446 Product Preview HDTMOS3e Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery

MPSA28

Abstract: MPSA29
Contextual Info: ON Semiconductort MPSA28 MPSA29* Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector–Emitter Voltage VCES 80 100 Vdc Collector–Base Voltage VCBO 80 100 Vdc Emitter–Base Voltage