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    AD 152 TRANSISTOR Search Results

    AD 152 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    AD 152 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LOGIC 4583

    Abstract: FR20 FR21 FR22 M34583EDFP M34583MD-XXXFP
    Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4583 Group REJ03B0009-0200Z Rev.2.00 2003.04.16 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION ●Interrupt . 7 sources


    Original     		REJ03B0009-0200Z 10-bit LOGIC 4583 FR20 FR21 FR22 M34583EDFP M34583MD-XXXFP PDF

    2N1174

    Abstract: 2N1179 2N1113 transistor marking WY ske 250A
    Text: ● MIL-s-19500/215 NAVV 9 November 1961 ~fTARY TRANSISTOR, 1. SPECIFICATION ‘IYPES 2N1179 ANo SCOPE 1.1 ~ - Tht8 specification covers PNP type 2N1 174 transistors, tie general 19500, unie.m otherwise specified herein. the detail requirements for germankm,


    Original     		MIL-s-19500/215 2N1179 IMDL12 2NI174; MIL-fl-19520/ll 5001he 2N1174. 2N1174 2N1113 transistor marking WY ske 250A PDF

    LP1001

    Abstract: LP1001A
    Text: MOTOROLA Order this document by LP1001/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors LP1001 LP1001A The LP1001 is designed for CATV and other Broadband linear applications. This Motorola series of small–signal plastic transistors offers superior quality


    Original     		LP1001/D LP1001 LP1001A LP1001 226AA LP1001/D* LP1001A PDF

    AN569

    Abstract: MTP40N10E ad 152 transistor
    Text: MOTOROLA Order this document by MTP40N10E/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet MTP40N10E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0.04 OHM This advanced TMOS E–FET is designed to withstand high


    Original     		MTP40N10E/D MTP40N10E AN569 MTP40N10E ad 152 transistor PDF

    capacitor 0,1 mF 50V

    Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram
    Text: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization


    Original     		P4525-ND P5182-ND 1-877-GOLDMOS 1301-PTF capacitor 0,1 mF 50V 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram PDF

    G200

    Abstract: No abstract text available
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 57% efficiency with 19 dB of gain. Nitride surface passivation and full gold metallization


    Original     		P4525-ND P5782-ND 1-877-GOLDMOS 1301-PTF G200 PDF

    KP 2010

    Abstract: M38039G8H-XXXHP
    Text: 3803H Group QzROM version Standard Characteristics Standard Characteristics Example Standard characteristics described below are just examples of the 3803H Group(QzROM version)'s characteristics and are not guaranteed.


    Original     		3803H M38039G4H-XXXHP/KP M38039G6H-XXXHP/KP M38039G8H-XXXHP/KP M38039GCH-XXXHP/KP/WG M38039G4HSP/HP/KP M38039G6HSP/HP/KP M38039G8HSP/HP/KP M38039GCHSP/HP/KP/WG KP 2010 M38039G8H-XXXHP PDF

    Untitled

    Abstract: No abstract text available
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and


    Original     		P4525-ND P5782-ND 1-877-GOLDMOS 1301-PTF PDF

    SSC 9500 ic data

    Abstract: SSC 9500 MOTOROLA SCR driver ic tft ssc 9500 D117 TRANSISTOR BJ 131 D116 D118 D119 D120
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Source Column Driver for TFT Type LCD Panel MC141524 CMOS The MC141524 is a high voltage LCD source driver. It is a low power silicongate CMOS LCD driver chip which consists of 120 channels source drive to provide the drain bus signal of a TFT (Thin-Film-Transistor) LCD panel.


    Original     		MC141524 MC141524 MC141522 98ASL00211A MC141524T1 SSC 9500 ic data SSC 9500 MOTOROLA SCR driver ic tft ssc 9500 D117 TRANSISTOR BJ 131 D116 D118 D119 D120 PDF

    HXTR-3685

    Abstract: HXTR-3686 HXTR3685 HXTR 3685
    Text: Whpì HEWLETT ll'/ U PACKARD Low Cost General Purpose Transistors Technical Data HXTR-3685 HXTR-3686 F eatures HXTR-3685 HXTR-3686 HXTR-3685 « Low Noise Figure: 1.8 dB Typical at 1 GHz • High Gain: 16.4 typ ical at 1 GHz at Noise Figure Bias • Low Cost Plastic Package


    OCR Scan     		HXTR-3685 HXTR-3686 HXTR-3685 HPAC-85 HPAC-86 HXTR-3686 HXTR3685 HXTR 3685 PDF

    AT41400

    Abstract: ad 156 transistor maximum gain 33 at 2.0 ghz
    Text: m H EW LETT PACKARD AT-f 1400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Features • • • Chip Outline Low NoiseFigure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High AssociatedGain: 14.5 dB typical at 2.0 GHz 10.5 dB typical at 4.0 GHz


    OCR Scan     		AT-41400 metal12 AT41400 ad 156 transistor maximum gain 33 at 2.0 ghz PDF

    IR LFN

    Abstract: 2SD1017 LFN ir 180W 2SB768 2SB810 2SB811 2SB812 T5L10 T8L10
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		Tc-25 2SB816 IR LFN 2SD1017 LFN ir 180W 2SB768 2SB810 2SB811 2SB812 T5L10 T8L10 PDF

    SD1019

    Abstract: TEA 1019 M130
    Text: H M S 'n m rtìr^ f- * r t I f l / C f S f ¡ I P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 SD1019 RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS CLASS C TRANSISTOR FREQUENCY


    OCR Scan     		152MHz 136MHz SD1019 Juncti8SP1019-09 S085D1019-10 SD1019 15mFSEMCOR C7AB220 150pF 14AWG. TEA 1019 M130 PDF

    BLX14

    Abstract: SOT-48 BLX88 BLX66 BLY93 BLY94 BLY33 BLY34 2N3375 810BLY transistor
    Text: Transistors n-p-n r.f. power transistors book 1 parts 1 and 2 - § Type No. Maximum Ratings ^b o v ceo *cm ° K hFE 'ciav I ® £ % T* at Ptot m in - m a x - lc f r VcE sat> m ' n* m a x - at 'c Po ,8 *• GP at ty p . f at V cc Tm£ “ (V) (V) IA)


    OCR Scan     		810BLY/A 8LX13 BLX14 BLY33 BLY34 h--22-> crt6-25 SOT-48 BLX88 BLX66 BLY93 BLY94 2N3375 810BLY transistor PDF

    TLP127F

    Abstract: No abstract text available
    Text: TLP127 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA PROGRAMMABLE CONTROLLERS DC-OUTPUT MODULE TELECOMMUNICATION The TOSHIBA MINT FLAT COUPLER TLP127 is a nmnll outline coupler, suitable for surface mount assembly. TLP127 consists of a gallium arsenide infrared emitting


    OCR Scan     		TLP127 TLP127 2500Vrms TLP127F PDF

    HVR3509

    Abstract: kbp 3510 DF101 3505G P6KE 6CA GENERAL SEMICONDUCTOR CK 6CA SMd 6CA smd diodes ke 48 model PB201M smd 8ca
    Text: iiA irr PRODUCT PACKAGING SPECIFICATIONS AMMOPAK PACKAGING FOR TRANSISTORS TO-92 PLASTIC CASE Carrier tape Specification of carrier tape T h e c a rrie r tap e c o n s is ts of a c a r d ­ b oard strip with s p ro c k e t holes. The p ins of th e tr a n s is to rs are s e c u re d


    OCR Scan     		KBL005, KBL01, RS401S-RS407S RS501S-RS507S. KBP005G KBP10G, KBP2005G KBP210G, E95060A D1I/0118310 HVR3509 kbp 3510 DF101 3505G P6KE 6CA GENERAL SEMICONDUCTOR CK 6CA SMd 6CA smd diodes ke 48 model PB201M smd 8ca PDF

    transistor 2222a

    Abstract: pm 2222a 3316 TRANSISTOR
    Text: Thp m LriM I H E W LE T T P ack ard 4.8 VNPN Silicon Bipolar Common Emitter Transistor Ifechnical Data A T-38086 F eatures • 4.8 Volt Pulsed pulse width = 577 jisec, duty cycle = 12.5% /CW Operation • +28 dBm Pulsed Pout @ 900 MHz, Typ. • +23.5 dBm CWPout


    OCR Scan     		T-38086 AT-38086 1998Hewlett-Packard 5965-5959E 5966-3835E transistor 2222a pm 2222a 3316 TRANSISTOR PDF

    internal circuit of UM3561

    Abstract: Siren Sound Generator circuit diagram UM3561 um3562 UM3561 pin diagram Siren Sound Generator 4 sound UM3561 Siren Sound Generator 5 sound siren police diagram Siren Sound Generator transistor UM3561
    Text: UNICORN MICROELECTRONICS E4E » • ia7fl?fiö 0001543 1 ■ T - 17^13 U M 3561 Three Siren Sound Generator Features ■ A magnetic speaker can be driven by connecting an ■ Four sounds can be selected NPN transistor ■ Typical 3V operating voltage ■ Power on reset


    OCR Scan     		UM3561 UM3561 2SC9013 T27fl DGD154ti- VssSEL20SC2 UM3S61 internal circuit of UM3561 Siren Sound Generator circuit diagram um3562 UM3561 pin diagram Siren Sound Generator 4 sound UM3561 Siren Sound Generator 5 sound siren police diagram Siren Sound Generator transistor UM3561 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    RT150B

    Abstract: THP47 transistor TF78 2N2467 2SB331 AC117 AC178 AD164 xc121 TF78/30
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. 2N2535T 2N2536T 2SB130 AD169 133m0 300kt RT150B THP47 transistor TF78 2N2467 2SB331 AC117 AC178 AD164 xc121 TF78/30 PDF

    transistor vergleichsliste

    Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
    Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N


    OCR Scan     		PDF

    OKI EM-318

    Abstract: No abstract text available
    Text: 12R & 13R & 98R .D S Page 1 M onday, August 5, 1996 3:08 PM Oki Semiconductor_ MSM12R0000/MSM13R0000/MSM98R000 0.5|.im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays DESCRIPTION OKI's 0.5|^m ASIC products, specially designed for m ixed 3-V /5-V applications, are now available in both


    OCR Scan     		MSM12R0000/MSM13R0000/MSM98R000 MSM13R MSM98R 16-Mbit 12R/13R OKI EM-318 PDF

    KA317LZ

    Abstract: No abstract text available
    Text: KA317L ADJUSTABLE VOLTAGE REGULATOR POSITIVE 3-TERMINAL 0.1A POSITIVE ADJUSTABLE REGULATOR The KA317L is a 3-terminai adjustable positive voltage raguiatof capable of supplying in exca*»of100mA over an out­ put voltage ranoe of 1 ,2Vto 37V. This voltage regulator is ex­


    OCR Scan     		KA317L KA317L of100mA 100mA KA317LZ 0-125T; KSP2222 PDF

    TIC 136 Transistor

    Abstract: 2.22 pf trimmer
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF4427R2 D e s ig n e d fo r a m p lifie r, fre q u e n c y m u ltip lie r, o r o s c illa to r a p p lic a tio n s in in d u stria l e q u ip m e n t co n s tru c te d w ith su rfa c e m o u n t c o m p o n e n ts . S u ita b le fo r


    OCR Scan     		MRF4427R2 --j13 TIC 136 Transistor 2.22 pf trimmer PDF