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    2SB130 Search Results

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    2SB130 Price and Stock

    Rochester Electronics LLC 2SB1302S-TD-E

    TRANS PNP 20V 5A PCP
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    DigiKey 2SB1302S-TD-E Bulk 8,000 1,109
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    ROHM Semiconductor 2SB1308T100R

    TRANS PNP 20V 3A MPT3
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    DigiKey 2SB1308T100R Cut Tape 1
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    2SB1308T100R Digi-Reel 1
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    Mouser Electronics 2SB1308T100R
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    Bristol Electronics 2SB1308T100R 875
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    Quest Components 2SB1308T100R 700
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    Micro Commercial Components 2SB1308-P-TP

    TRANS PNP 20V 3A SOT-89
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    Micro Commercial Components 2SB1308-R-TP

    TRANS PNP 20V 3A SOT-89
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    Micro Commercial Components 2SB1308-Q-TP

    TRANS PNP 20V 3A SOT-89
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    2SB130 Datasheets (93)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB130 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB130 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB130 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB130 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB130 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB130 Unknown Vintage Transistor Datasheets Scan PDF
    2SB130 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB130 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB130 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB130 Unknown Cross Reference Datasheet Scan PDF
    2SB1300 NEC Semiconductor Selection Guide 1995 Original PDF
    2SB1300 NEC Semiconductor Selection Guide Original PDF
    2SB1300 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1300 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1300 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1300 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1300 NEC Silicon Transistor Scan PDF
    2SB1300 NEC PNP SILICON POWER TRANSISTOR Scan PDF
    2SB1301 NEC Semiconductor Selection Guide 1995 Original PDF

    2SB130 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb1302

    Abstract: No abstract text available
    Text: Ordering number: E N 2 5 5 5 A 2SB1302 N0.2555A SA\YO PNP E pitaxial P lanar Silicon T ransistor High-Current Switching Applications Applications . DC-DC converters, motor drivers, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . Low collector to emitter saturation voltage


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    2SB1302 250mm2 D268M0/4097TA 2SB1302 -10FA PDF

    2SB1308

    Abstract: 2SD1963 T100
    Text: 2SB1308 Transistors Power transistor −50V, −3A 2SB1308 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963. zExternal dimensions (Unit : mm)


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    2SB1308 2SD1963. 2SB1308 2SD1963 T100 PDF

    MCC BFR

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features • • • • • Case Material: Molded Plastic. Classification Rating 94V-0   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1308 PNP Plastic-Encapsulate


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    2SB1308 MCC BFR PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 TRANSISTOR(PNP ) FEATURES Power dissipation PCM : 0.5 Collector current ICM : -3 Collector-base voltage V BR CBO : -30 SOT-89 1.BASE


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    OT-89 2SB1308 OT-89-3L 500TYP 060TYP PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1308 TRANSISTOR PNP 1. BASE FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage 2. COLLECTOR 3. EMITTER


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    OT-89-3L OT-89-3L 2SB1308 PDF

    2SB1308

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A


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    OT-89 2SB1308 OT-89 -50ollector-base -50mA 30MHz 2SB1308 PDF

    2SB1300

    Abstract: PH 06
    Text: • 5 /— h Silicon T ran sis to r 2SB1300 is T J U M > ' =1V P N P ic f f i j a a s « * * * « *? j : c r + » * ; * < 4# v * >?m - ^ ii - f t V CE ( s a t ) ~ V 0.42 < , Ic(DO — TYP. ( @ I c /I B= — 3.0 L # ' & A S O ^ 'J A , I c(pulse)= — 5 . 0


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    2SB1300 2SD195U SC-43B CyclesS50 2SB1300 PH 06 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


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    2SB1308-P 2SB1308-Q 2SB1308-R OT-89 PDF

    2SB1302

    Abstract: ITR09567 ITR09568 ITR09570 4 a 20mA
    Text: Ordering number:ENN2555A PNP Epitaxial Planar Silicon Transistor 2SB1302 High-Current Switching Applications Applications Package Dimensions • DC-DC converters, motor drivers, relay drivers, lamp drivers. unit:mm 2038A [2SB1302] Features 4.5 1.6 1.5 0.4 1.0


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    ENN2555A 2SB1302 2SB1302] 25max 2SB1302 ITR09567 ITR09568 ITR09570 4 a 20mA PDF

    2SB1308

    Abstract: BJT BF 167
    Text: SPICE PARAMETER 2SB1308 by ROHM TR Div. * 2SB1308 PNP BJT model * Date: 2006/11/14 .MODEL 2SB1308 PNP + IS=500.00E-15 + BF=167.27 + VAF=6.0750 + IKF=13.423 + ISE=500.00E-15 + NE=1.8133 + BR=101.30 + VAR=100 + IKR=.95905 + ISC=2.4533E-12 + NC=1.2497 + NK=.74369


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    2SB1308 Q2SB1308 00E-15 4533E-12 000E-3 569E-3 05E-12 17E-12 2SB1308 BJT BF 167 PDF

    2SB1308

    Abstract: No abstract text available
    Text: h -7 > y 7. £ /Transistors 2 S B 1 3 2SB1308 I PNP '> « ;□ > b7>yz$ Epitaxial Planar PNP Silicon Transistor ftS à M M Iflî/L o w Freq. Power Amp. 8 • W fN ’jiEI/Dimensions Unit : mm 1) V cE fsa *)^ 1'« V cE (sa t)= -0 .4 5 V (Max.) *-» -S:


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    2SB1308 SC-62 30MHz 001013b PDF

    Untitled

    Abstract: No abstract text available
    Text: HOE D ROHM CO LTD n □ □ □ ¿ b lS S BBRHM 2SB1306/2SB1307M/2SB1326/2SB1386 /T ra n s is to rs 7^27-21 S B 1 3 S / 2 S B 1 3 7 2 S 3 1 3 2 3 / 2 5 3 1 3 S S 7 tl7 - Z IV 3 VhJJVSVvJI-r 2 m m m t i m m m / L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors


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    2SB1306/2SB1307M/2SB1326/2SB1386 PDF

    2SB1308Q

    Abstract: 2sb1308r MCC BFR
    Text: MCC TM Micro Commercial Components Features x • • • • 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability


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    2SB1308-P 2SB1308-Q 2SB1308-R 2SB1308Q 2sb1308r MCC BFR PDF

    2sb1308p

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x • • • • 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability


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    2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R 2sb1308p PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features x • • • • Case Material: Molded Plastic. Classification Rating 94V-0 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#


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    2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R PDF

    marking BJ pnp SOT89

    Abstract: No abstract text available
    Text: Ordering number : EN2555C 2SB1302 Bipolar Transisitor –20V, –5A, Low VCE sat PNP Single PCP http://onsemi.com Applicaitons DC-DC converters, motor drivers, relay drivers, lamp drivers • Features • Low collector to emitter saturation voltage Adoption of FBET, MBIT processes


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    EN2555C 2SB1302 marking BJ pnp SOT89 PDF

    2sd1200

    Abstract: 2SB1309
    Text: h "7 > V X £ / T ransistors 2 S B 1 3 2SB1309 I t°^ ^ r'> 77^ 7 ° U - ^ P N P '> ';= !> h ÿ > y ' z $ fëJS}j£ tl;fri|lllffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor 9 • 1 Dimensions Unit : mm K T ? a t 3 Î i T * î ‘J , * s' ^ T ' Æ . - â o


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    2SB1309 2SB1309 2SD1200. T0126F 2sd1200 PDF

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SB1308 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features TRANSISTOR PNP design, excellent power dissipation offers • Batch process better


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    OT-89 060TYP FM140-MH FM150-MH FM160-MH M180-MH FM1100-MH FM1150-MH FM1200-MH FM120-MH PDF

    MCC BFR

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


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    2SB1308-P 2SB1308-Q 2SB1308-R OT-89 MCC BFR PDF

    SMD TRANSISTOR MARKING BF

    Abstract: bf TRANSISTOR smd BF Marking transistor smd bf MARKING 15A MARKING BF 2SB1308 SMD TRANSISTOR BF
    Text: Transistors SMD Type Power Transistor 2SB1308 Features Low saturation voltage, typically VCE sat = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage


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    2SB1308 100MHz SMD TRANSISTOR MARKING BF bf TRANSISTOR smd BF Marking transistor smd bf MARKING 15A MARKING BF 2SB1308 SMD TRANSISTOR BF PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1308 Features Low saturation voltage, typically VCE sat = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO


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    2SB1308 100MHz PDF

    2SD1200

    Abstract: transistor d 2333 2SB1309 ti25 2SD120 TO-126F TO-126-F
    Text: 40E D ROHM CO LTD • 7020^=] aaOSb2D T HRHH h 7 > V ^ ^ /Transistors 2SB1309 : 2S@13< ““ “ X t ° $ * y 7 J l ' 7 ° l s - - J - B P N P T-33-/7 y V = J > ‘ :ü>Æ^^jiHlf!lffl/Lo w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • w* • ii-J fi^ jiH /'D im e n s io n s Unit : mm


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    2SB1309 T-33-/7 2SD1200tz} 2SD1200. O-126F ai/95 000SL T-33-17 Ti-25 2SD1200 transistor d 2333 2SB1309 ti25 2SD120 TO-126F TO-126-F PDF

    2SB1301

    Abstract: transistor a015 zt sot-89
    Text: -y 2 . / - S ilic o n T ra n s is to r 2SB1301 P » N P x t 7 + - > 7 ^ r i ; m ymW'Mh'Jy^'- o 3 u 7 V _ K(süi>= — 0 . 4 2 V O Tg ,r;. n ¥: ? < , 3,0 o hv-K^V.'-ï ( , 4.5 ± 0.1 TYP. L -h A , 11•<pui- 5.0 zj -7 > i} / > 1.5 + 0.1 r- ? > A


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    2SB1301 o2SD1952> 2SB1301 transistor a015 zt sot-89 PDF

    2SB1306

    Abstract: 2SB1307M
    Text: h "7 > V ^ £ /Transistors 2SB1306/2SB1307M/2SB1326/2SB1386 2 S B 1 3 0 6 /2 S B 1 3 0 7 M 2 S B 1 3 2 6 /2 S B 1 3 8 6 P N P '> U = l> h 7 > y ^ ^ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors • • ^ ii'T iilll/D im e n s io n s Unit: mm


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    2SB1306/2SB1307M/2SB1326/2SB1386 2SB1306 2SB130TM 2SB1326 2SB1386tors 2SB1307M PDF