ACESS CONTROL SYSTEM Search Results
ACESS CONTROL SYSTEM Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TB9M003FG |
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Pre-Driver For Automobile / 3-Phase Brushless Pre-Driver / Vbat(V)=-0.3~+40 / AEC-Q100 / P-HTQFP48-0707-0.50-001 |
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TB9120AFTG |
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Stepping motor driver for automobile / Driver for a 2-phase bipolar stepping motor / AEC-Q100 / P-VQFN28-0606-0.65 |
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DCM340D01 |
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Digital Isolator / VDD=3.0~5.5V / 50Mbps / 4 channel(F:R=4:0) / Default Output Logic: High / AEC-Q100 |
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DF2B7AFS |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-923, AEC-Q101 |
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SSM6J808R |
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MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 |
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ACESS CONTROL SYSTEM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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A4998
Abstract: IXF1002 gmii phy A4989 a4945 PKC 2135
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IXF1002 IXP1002 1000BASE-X A4998 gmii phy A4989 a4945 PKC 2135 | |
MSP430
Abstract: 00CFh 01FFH 0212H
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MSP430 00CFh 01FFH 0212H | |
mbus acquisition
Abstract: mbus controllers 106 25K
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KS0155 KS0155 27Mbps. 27MHz. CCIR-656 27MHz 100-TQFP-1414-AN mbus acquisition mbus controllers 106 25K | |
ADI1981
Abstract: BCM2035 20XCD Broadcom shell
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44064MB 333MHz 40/60GB) iEEE1394, ADI1981 BCM2035 20XCD Broadcom shell | |
WC1G
Abstract: ct Potentiometer ground relay CURRENT TRANSFORMER Acess control SYSTEM
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120AC 220AC 230AC 380AC 400AC 460AC 480AC 575AC WC1G-120AC WC1G ct Potentiometer ground relay CURRENT TRANSFORMER Acess control SYSTEM | |
2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM
Abstract: rf based intruder alarm HCS08QE 4 bit RF based remote control circuit diagram window curtain automation MC1323X wireless SURROUND sound system circuit diagram of wireless door 20 pin diagram of zigbee Zigbee-pro
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MC1323x HCS08QE 16-bit 48-LGA MC13233C 48-LGA 260/tray 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM rf based intruder alarm 4 bit RF based remote control circuit diagram window curtain automation wireless SURROUND sound system circuit diagram of wireless door 20 pin diagram of zigbee Zigbee-pro | |
Contextual Info: Fact Sheet MC1323x 2.4 GHz IEEE 802.15.4/ZigBee® System-onChip Solution Applications Overview Consumer Our fourth-generation 2.4 GHz IEEE 802.15.4/ ZigBee® ready solution has been designed to serve the requirements of the consumer electronics market, yet offers a feature set and |
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MC1323x MC13234 MC13237, MC1323x, MC13237CHT MC13237CHTR2 12-bit 48-LGA, 260/tray | |
H3084
Abstract: RMII PHY MTD505 h1838
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MTD505 10M/100M MTD505 IEEE802 MTD505, H3084 RMII PHY h1838 | |
TXD70
Abstract: RMII PHY MTD508
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MTD508 10M/100M IEEE802 pressure/802 75MHz MTD508 TXD70 RMII PHY | |
BGB100Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGB100 0 dBm TrueBlue radio module Preliminary specification 2001 Oct 25 Philips Semiconductors Preliminary specification 0 dBm TrueBlue radio module BGB100 FEATURES APPLICATIONS • Plug-and-play Bluetooth class 2 radio module, needs |
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BGB100 SCA73 budgetnum/ed/pp16 | |
DECT RF Transceiver 1.9 ghz
Abstract: RF MODULE CIRCUIT DIAGRAM dect BGB100 GSM-900 SOT649 BGB1000
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BGB100 SCA73 budgetnum/ed/pp16 DECT RF Transceiver 1.9 ghz RF MODULE CIRCUIT DIAGRAM dect BGB100 GSM-900 SOT649 BGB1000 | |
En1522
Abstract: RMII12 "filtering database" RMII PHY uplink DMA13 MTD516 REG14 RXD11 RMII Specification revision 1.2
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MTD516 10M/100M IEEE802 pressure/802 83MHz MTD516 En1522 RMII12 "filtering database" RMII PHY uplink DMA13 REG14 RXD11 RMII Specification revision 1.2 | |
ANT 7910 regulator
Abstract: BGB100 GSM-900 CNR50
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BGB100 budgetnum/ed/pp16 ANT 7910 regulator BGB100 GSM-900 CNR50 | |
3DSD3G48VQ6486Contextual Info: MEMORY MODULE SDRam 64Mx48-QFP Synchronous Dynamic Ram MODULE 3DSD3G48VQ6486 3Gbit SDRam organized as 64Mx48, based on 32Mx16 Pin Assignment Top View QFP 114-(Pitch : 0.635mm) - Organized as 64Mx48-bit. - Single +3.3V power supply. 27 28 29 30 31 32 33 34 |
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64Mx48-QFP 3DSD3G48VQ6486 64Mx48, 32Mx16 635mm) 64Mx48-bit. 133MHz/CL3 3DFP-0486-REV 3DSD3G48VQ6486 | |
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Contextual Info: moi _ C Electronic DMlgn» Ine. EDI411024C High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with |
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EDI411024C EDI411024C | |
XS 3860 bContextual Info: Advance Information X28TC256 256K 32K x 8 Bit Turbo Access E2PROM FEATURES DESCRIPTION * 25ns Access Time —Within 64-Byte Page Boundaries —Page Crossing Status Output—WAIT * 5 Volt Byte and Page Alterable —Write From One to Sixty-Four Bytes —Write Time— 5ms Max. |
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X28TC256 64-Byte X28TC256 XS 3860 b | |
EDI411024CContextual Info: ^ E D _ I Electronic Detlgns Inc. EDI411024C High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with |
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EDI411024C EDI411024C | |
MemoryContextual Info: 512Kx8/256Kx16/128Kx32, 15 - 35ns, 30A167-00 A Surface Mount FTE32KX32XP/XHP 1 Megabit CMOS EEPROM DESCRIPTION: The FTE32KX32XP/XHP is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organised as 32K X 32, 64K X 16 or 128K |
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512Kx8/256Kx16/128Kx32, 30A167-00 FTE32KX32XP/XHP FTE32KX32XP/XHP 16-bit 32-bit 64-BWDW Memory | |
a719
Abstract: EDI411024C 150ni 15trc 1MX1
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EDI411024C EDI4110240 T-46-23-15 EDI411024Ã Noie27 EDI411024C a719 150ni 15trc 1MX1 | |
Contextual Info: ^EDI _EDI411024C Electronic Detlgns Inc. High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with |
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EDI411024C EDI411024C | |
D12TEST
Abstract: PDIUSBD12 USB Printer BLM32A07 self BLM32A07 MC68331 PDIUSBD11 PDIUSBD12 philips softconnect softconnect re-enumeration
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PDIUSBD12 PDIUSBD11 PDIUSBD12 D12TEST PDIUSBD12 USB Printer BLM32A07 self BLM32A07 MC68331 philips softconnect softconnect re-enumeration | |
Contextual Info: TC51W3216XB-80,-85 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51W3216XB is a 33,554,432-bit pseudo static random access memory PSRAM organized as 2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high density, high |
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TC51W3216XB-80 152-WORD 16-BIT TC51W3216XB 432-bit | |
Contextual Info: TC51W6416XB-80,-85 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51W6416XB is a 67,108,864-bit pseudo static random access memory PSRAM organized as 4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high density, high |
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TC51W6416XB-80 304-WORD 16-BIT TC51W6416XB 864-bit | |
EDI411024CContextual Info: m o _ EDI411024C i Electronic D*4gn» Ine. High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic railLDHflDNAmf Features The ED 1411024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x1. The use of triple-layer polysilicon process, combined with |
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EDI411024C 1411024C EDI411024C |