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    AC780 Search Results

    AC780 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DAC7800LP Texas Instruments Dual Monolithic CMOS 12-Bit Multiplying Digital-to-Analog Converter 16-PDIP -40 to 85 Visit Texas Instruments
    DAC7800KU Texas Instruments Dual Monolithic CMOS 12-Bit Multiplying Digital-to-Analog Converter 16-SOIC -40 to 85 Visit Texas Instruments Buy
    DAC7800KU/1K Texas Instruments Dual Monolithic CMOS 12-Bit Multiplying Digital-to-Analog Converter 16-SOIC -40 to 85 Visit Texas Instruments Buy
    DAC7801KU Texas Instruments Dual Monolithic CMOS 12-Bit Multiplying Digital-to-Analog Converter 24-SOIC -40 to 85 Visit Texas Instruments Buy
    DAC7802KU Texas Instruments Dual Monolithic CMOS 12-Bit Multiplying Digital-to-Analog Converter 24-SOIC -40 to 85 Visit Texas Instruments Buy
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    AC780 Price and Stock

    KEMET Corporation CA064X153K1RAC7800

    CAP ARRAY 0.015UF 100V X7R 0612
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CA064X153K1RAC7800 Digi-Reel 15,475 1
    • 1 $0.44
    • 10 $0.259
    • 100 $0.1661
    • 1000 $0.1168
    • 10000 $0.1168
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    CA064X153K1RAC7800 Cut Tape 15,475 1
    • 1 $0.38
    • 10 $0.248
    • 100 $0.38
    • 1000 $0.1286
    • 10000 $0.1286
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    CA064X153K1RAC7800 Reel 12,000 4,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.09218
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    KEMET Corporation CA064X332K2RAC7800

    CAP ARRAY 3300PF 200V X7R 0612
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    DigiKey CA064X332K2RAC7800 Digi-Reel 11,593 1
    • 1 $0.44
    • 10 $0.259
    • 100 $0.1657
    • 1000 $0.11643
    • 10000 $0.11643
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    CA064X332K2RAC7800 Cut Tape 11,593 1
    • 1 $0.38
    • 10 $0.246
    • 100 $0.38
    • 1000 $0.12785
    • 10000 $0.12785
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    CA064X332K2RAC7800 Reel 8,000 4,000
    • 1 -
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    • 10000 $0.09162
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    KEMET Corporation C0805C680KBRAC7800

    CAP CER 68PF 630V X7R 0805
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    DigiKey C0805C680KBRAC7800 Cut Tape 4,720 1
    • 1 $0.41
    • 10 $0.254
    • 100 $0.41
    • 1000 $0.12597
    • 10000 $0.12597
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    KEMET Corporation CA064X223K1RAC7800

    CAP ARRAY 0.022UF 100V X7R 0612
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CA064X223K1RAC7800 Digi-Reel 4,000 1
    • 1 $0.31
    • 10 $0.203
    • 100 $0.1216
    • 1000 $0.08107
    • 10000 $0.08107
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    CA064X223K1RAC7800 Cut Tape 4,000 1
    • 1 $0.31
    • 10 $0.203
    • 100 $0.1216
    • 1000 $0.08107
    • 10000 $0.08107
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    CA064X223K1RAC7800 Reel 4,000 4,000
    • 1 -
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    • 10000 $0.1
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    KEMET Corporation CA064X103K3RAC7800

    CAP ARRAY 10000PF 25V X7R 0612
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CA064X103K3RAC7800 Digi-Reel 3,850 1
    • 1 $0.36
    • 10 $0.213
    • 100 $0.1351
    • 1000 $0.0939
    • 10000 $0.0939
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    CA064X103K3RAC7800 Cut Tape 3,850 1
    • 1 $0.31
    • 10 $0.191
    • 100 $0.31
    • 1000 $0.09212
    • 10000 $0.09212
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    Find more AC780 price and stock on Findchips.com

    AC780 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NPTB00004

    Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100
    Text: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for


    Original     		NPTB00004 PO150S NPT25015 NPT35015 NPT1012 2xNPT25100 NPTB00004 NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100 PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		NPT35050A 3A001b 750mA, NDS-003 PIMD3 PDF

    ifr 2390A

    Abstract: 2390a EN55011-1991 AC0410 return loss bridge 2392A 2392A-110 M10HW AC238 ma 8620
    Text: Spectrum Analyzers 2390A series Spectrum Analyzers A range of RF and Microwave Spectrum Analyzers that offer value and performance to both field and bench users • Fully synthesized Spectrum Analyzers to 26.5 GHz • 3 Hz to 30 MHz resolution bandwidth filters


    Original     		PDF

    NPT1007

    Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99
    Text: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature


    Original     		NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 PDF

    NPT25100

    Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P
    Text: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader


    Original     		NPTB00004 PO150S 99GHz 17GHz -35dBc NPT25015 NPT25100 800-1000MHz NPT25100 NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P PDF

    NPT25100

    Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
    Text: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		NPT35050A 3A001b 750mA, NPT35050A NDS-003 PIMD3 PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3 PDF

    NPTB00004

    Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate
    Text: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.


    Original     		NPTB00004 PO150S NPT25015 NPTB00004 NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate PDF

    NPT25100

    Abstract: PIMD3
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		NPT25100 2700MHz 10MHz 3A982 NDS-001 NPT25100 PIMD3 PDF

    NPTB0004

    Abstract: NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz
    Text: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with large-area silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and


    Original     		NPT25015 PO150S NPT251 NPTB00025 AC200B NPTB00040 AC360C NPTB00050 AC360B NPTB0004 NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		NPT35050A 3A001b 750mA, NDS-003 PIMD3 PDF

    TRANSISTOR J15

    Abstract: PIMD3
    Text: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature


    Original     		NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 TRANSISTOR J15 PIMD3 PDF

    PIMD3

    Abstract: npT1007 TRANSISTOR J15
    Text: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature


    Original     		NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 PIMD3 npT1007 TRANSISTOR J15 PDF

    AC712

    Abstract: No abstract text available
    Text: B U R R -B R O W N DAC712 16-BIT DIGITAL-TO-ANALOG CONVERTER With 16-Bit Bus Interface DESCRIPTION FEATURES HIGH-SPEED 16-BIT PARALLEL DOUBLEBUFFERED INTERFACE DAC712 is a complete 16-bit resolution D/A converter with 16 bits of monotonicity over temperature.


    OCR Scan     		DAC712 16-BIT 15-BIT 600mW 28-LEAD DAC712 AC712 PDF

    Untitled

    Abstract: No abstract text available
    Text: OCT 1 9 ' s2° B U R R -B R O W N AC7800 AC7801 AC7802 I e s Im b B Dual Monolithic CMOS 12-Bit Multiplying DIGITAL-TO-ANALOG CONVERTERS APPLICATIONS FEATURES PROCESS CONTROL OUTPUTS ATE PIN ELECTRONICS LEVEL SETTING PROGRAMMABLE FILTERS PROGRAMMABLE GAIN CIRCUITS


    OCR Scan     		DAC7800 DAC7801 DAC7802 12-Bit -94dB DAC7800, PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual Monolithic CMOS 12-Bit Multiplying DIGITAL-TO-ANALOG CONVERTERS FEATURES APPLICATIONS • TWO D/As IN A 0.3" WIDE PACKAGE • • SINGLE +5V SUPPLY • ATE PIN ELECTRONICS LEVEL SETTING • • PROGRAMMABLE FILTERS • PROGRAMMABLE GAIN CIRCUITS HIGH SPEED DIGITAL INTERFACE:


    OCR Scan     		12-Bit DAC7800 DAC7801 DAC7802 -94dB DAC7800, DAC7801 AC7802 PDF