AC 128 TRANSISTOR Search Results

germanium transistor ac 128

Abstract: transistor ac 127 AC127 valvo ac128 valvo transistoren transistor ac 132 germanium transistor ac 132 transistor ac 128 ac 127
Contextual Info: N ICH T FÜR N E U E N T W IC K L U N G E N AC 127 GERMANIUM - NPN - NF - TRANSISTOR ftir Endstufen, in Verbindung mit AC 128 oder AC 132 als komplementäres Paar Mechanisehe Daten; Gehäuse: Metall, JEDEC TO-1, 1 A 3 DIN 41 871 Alle Elektroden sind vom Gehäuse isoliert*

AN AD7195

Abstract: transistor 2440 50 hz Oscillator FS19 REJ60 FS12 0con-200 Registers MIC4427 Application Notes amplifier strain gage discrete transistor
Contextual Info: 4.8 kHz, Ultralow Noise, 24-Bit Sigma-Delta ADC with PGA and AC Excitation AD7195 FEATURES Chromatography PLC/DCS analog input modules Data acquisition Medical and scientific instrumentation AC or DC sensor excitation RMS noise: 8.5 nV at 4.7 Hz gain = 128

Contextual Info: 4.8 kHz, Ultralow Noise, 24-Bit Sigma-Delta ADC with PGA and AC Excitation AD7195 FEATURES Chromatography PLC/DCS analog input modules Data acquisition Medical and scientific instrumentation AC or DC sensor excitation RMS noise: 8.5 nV at 4.7 Hz gain = 128

sysdrive 3g3mv parameters

Abstract: 3G3MV-AB004 manual Sysdrive 3G3MV A4015 omron sysdrive 3g3iv
Contextual Info: SYSDRIVE 3G3MV AC INVERTER • Omron’s new SYSDRIVE 3G3MV Series AC Inverter SHOWN AT ACTUAL SIZE - 128 mm 5.04 in. Giving you the perfect combination of advanced speed control and customized functionality in an extraordinarily compact housing! This powerful inverter really

Contextual Info: 4.8 kHz, Ultralow Noise, 24-Bit Sigma-Delta ADC with PGA and AC Excitation AD7195 FEATURES Chromatography PLC/DCS analog input modules Data acquisition Medical and scientific instrumentation AC or DC sensor excitation RMS noise: 8.5 nV at 4.7 Hz gain = 128

FX3G-24M

Abstract: FX3G-14M mitsubishi plc FX3g 40m communication FX3G24M FX3G-40M mitsubishi MODBUS RTU mitsubishi plc FX3g 60m communication mitsubishi plc FX3g FX3G24M CAD FX3G-60M
Contextual Info: Specifications /// MITSUBISHI ELECTRIC Product Information EBG 196-EN Specifications FX3G-14M„ FX3G-24M„ I/O points Max. 128 direct addressing and max. 128 remote I/O Power supply FX3G 100–240 V AC +10 % / -15 % , 50/60 Hz Program memory 32,000 steps EEPROM (internal), exchangeable EEPROM memory cassette with loader function

AC128

Abstract: transistor AC128 AC128 transistor germanium transistor ac 128 valvo transistoren ac128 pnp germanium transistor ac128 ac128 germanium valvo valvo transistor
Contextual Info: NICHT FÜR N E U E N T W I C K L U N G E N AC 128 GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit AC 127 als komplementäres Paar Mechani sehe Daten: Gehäuse: Metall, JEDEC T0-1, 1 A 3 DIN 41 871

1307 TRANSISTOR

Abstract: H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 4N38A IC VS 1307 H11AA1 H11AA2 H11B2
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? I I 20% 10% 1500 1500 ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100

germanium transistor ac 128

Abstract: AC 128 pnp transistor AC128 AC128K germanium transistoren transistor ac 128 valvo valvo transistoren AC 128 valvo germanium
Contextual Info: NICHT FÜR N E U E N T W I C K L U N G E N AC 128 K GERMANIUM - PNP - TRANSISTOR für Endstufen als Transistorpaar für Gegentakt-B-Schaltungen Mechanische Daten: Gehäuse: Metall, JEDEC TO-1, 1 A 3 nach DIN 41 871 mit ) Kühlklotz Alle Elektroden sind vom Gehäuse isoliert.

photo interrupter module

Abstract: GE SCR 1000 GE SCR 1000 AMP H11C H13B1 4N38 4N38A H11A10 H11AA1 H11AA2
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? 1500 1500 I I 20% 10% ID nA MAX. BV c e o (VOLTS) MIN. 50 30 100 200 30 30 100 100

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 1/2014 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies

valvo

Abstract: valvo b8 320 valvo transistoren NTC Valvo ac128 valvo ntc AC127 AC 128 C3320 ScansUX7
Contextual Info: NICHT FÜR N E U E N T W IC K L U N G E N TRANSISTORSATZ Unter der Typenbezeichnung 40 809 wird ein kompletter Transistorsatz für gle i chst romgekoppe1te Iransformatorlose K omplementär-Endstufen ge liefert. Der Transistorsatz besteht aus AC 127 Vorstufe

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1007H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1007HR5 MMRF1007HSR5 RF power transistors designed for applications operating at frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 3, 6/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies

Freescale Xtrinsic

Abstract: C182 MRF6V12500H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 3, 6/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies

ATC100B1R0CT500XT

Abstract: Variable Gain Amplifiers freescale MRF6VP121KHR6 LDMOS push pull
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 0, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

r2561

Abstract: MRF6V12500H A114 A115 AN1955 C101 JESD22 MRF6V12500HR3 MRF6V12500HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies

GRM31CR72A105K

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 1, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies

MRF6V12250HSR3

Abstract: MRF6V12250H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 0, 5/2009 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies

wiring diagram OMRON CPM1A-30CDR

Abstract: CPM1A-30CDR-A omron CPM1-CIF01 rs 232 manual cpm1a cable OMRON CPM1A-30CDR manual CPM1-CIF01 CPM1A-40CDR-A CPM1A-20EDR CPM1A-TS101-DA TS101DA
Contextual Info: R Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include AC inputs/relay outputs, DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the

G2225X7R225KT3AB

Abstract: MRF6V12250HSR3 AN1955 MRF6V12250HR3 J162 250GX-0300-55-22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 2, 4/2010 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies

G2225X7R225KT3AB

Abstract: ATC100B330 ATC100B9R1CT500XT ATC100B102 96012 ad255 960-1215mhz A115 AN1955 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 1, 7/2009 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies