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    96012 Search Results

    96012 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    91596-012TRLF Amphenol Communications Solutions Minitek®, Board to Board, Receptacle, Surface Mount, Double row, 12 Positions, 2mm (0.079inch), Vertical. Visit Amphenol Communications Solutions
    84096012A Texas Instruments Octal Buffers And Line Drivers With 3-State Outputs 20-LCCC -55 to 125 Visit Texas Instruments Buy
    85096012A Texas Instruments Dual 1-Of-4 Data Selectors/Multiplexers With 3-State Outputs 20-LCCC -55 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    96012 Price and Stock

    Shiu Li Technology LLC PR27-41.91-28.96-0.127

    THERM PAD 41.91X28.96MM GRAY
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    DigiKey PR27-41.91-28.96-0.127 Bag 20,600 1
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    • 100 $2.8721
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    HellermannTyton 169-60123

    CONVOLUTEDTUBINGSPLIT,0.5"D
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    DigiKey 169-60123 Box 1,100 1,100
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    169-60123 607 1
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    HellermannTyton 169-60125

    CONVOLUTED TUBING, SPLIT, 0.75"
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    Littelfuse Inc 39601250000

    FUSE BRD MNT 125MA 125VAC RADIAL
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    DigiKey 39601250000 Cut Tape 591 1
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    Ozdisan Elektronik 39601250000
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    HellermannTyton 169-60129

    HELLERMANNTYTONS ORANGE FLAME-RE
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    DigiKey 169-60129 Box 300 300
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    TTI 169-60129 Spool 4,800
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    96012 Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    960120010 Wurth Electronics Hardware, Fasteners, Accessories - Board Spacers, Standoffs - ROUND PLASTIC SPACER L:12,0 MM Original PDF
    960120042 Wurth Electronics Hardware, Fasteners, Accessories - Board Spacers, Standoffs - ROUND PLASTIC SPACER L:12,0 MM Original PDF
    960120084 Wurth Electronics Hardware, Fasteners, Accessories - Board Spacers, Standoffs - ROUND PLASTIC SPACER L:12,0 MM Original PDF
    960120126 Wurth Electronics Hardware, Fasteners, Accessories - Board Spacers, Standoffs - ROUND PLASTIC SPACER L:12,0 MM Original PDF
    960120-6202-AR 3M Interconnect Solutions Rectangular Connectors - Headers, Receptacles, Female Sockets, Connectors, Interconnects, CONN SOCKET SGL VERT 20POS GOLD Original PDF
    960120-6303-AR 3M Interconnect Solutions Rectangular Connectors - Headers, Receptacles, Female Sockets, Connectors, Interconnects, CONN SOCKET SGL VERT 20POS GOLD Original PDF
    960120-7102-AR 3M Interconnect Solutions Rectangular Connectors - Headers, Receptacles, Female Sockets, Connectors, Interconnects, CONN SOCKET SGL R/A 20POS GOLD Original PDF
    960120-8100-AR-TP 3M Interconnect Solutions Rectangular Connectors - Headers, Receptacles, Female Sockets, Connectors, Interconnects, CONN SOCKET 20POS SGL BRDMNT SMD Original PDF
    960120-8100-AR-TR 3M Interconnect Solutions Rectangular Connectors - Headers, Receptacles, Female Sockets, Connectors, Interconnects, CONN SOCKET 20POS SGL BRDMNT SMD Original PDF
    96012124 Rose Bopla Boxes, Boxes, Enclosures, Racks, BOX POLY 4.45X3.15X2.36" GREY Original PDF
    96012125 Rose Bopla Boxes, Boxes, Enclosures, Racks, BOX POLY 4.45X3.15X2.36" GREY Original PDF
    96012134 Rose Bopla Boxes, Boxes, Enclosures, Racks, BOX POLY 4.45X3.15X3.54" GREY Original PDF
    96012135 Rose Bopla Boxes, Boxes, Enclosures, Racks, BOX POLY 4.45X3.15X3.54" GREY Original PDF
    960121-6202-AR 3M Interconnect Solutions Rectangular Connectors - Headers, Receptacles, Female Sockets, Connectors, Interconnects, CONN SOCKET SGL VERT 21POS GOLD Original PDF
    960121-6303-AR 3M Interconnect Solutions Rectangular Connectors - Headers, Receptacles, Female Sockets, Connectors, Interconnects, CONN SOCKET SGL VERT 21POS GOLD Original PDF
    960121-7102-AR 3M Interconnect Solutions Rectangular Connectors - Headers, Receptacles, Female Sockets, Connectors, Interconnects, CONN SOCKET SGL R/A 21POS GOLD Original PDF
    960121-8100-AR-TP 3M Interconnect Solutions Rectangular Connectors - Headers, Receptacles, Female Sockets, Connectors, Interconnects, CONN SOCKET 21POS SGL BRDMNT SMD Original PDF
    960121-8100-AR-TR 3M Interconnect Solutions Rectangular Connectors - Headers, Receptacles, Female Sockets, Connectors, Interconnects, CONN SOCKET 21POS SGL BRDMNT SMD Original PDF
    960122-6202-AR 3M Interconnect Solutions Rectangular Connectors - Headers, Receptacles, Female Sockets, Connectors, Interconnects, CONN SOCKET SGL VERT 22POS GOLD Original PDF
    960122-6303-AR 3M Interconnect Solutions Rectangular Connectors - Headers, Receptacles, Female Sockets, Connectors, Interconnects, CONN SOCKET SGL VERT 22POS GOLD Original PDF

    96012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S21ME8

    Abstract: 9601-2
    Text: SPE . NO. ED-96012 s~ Is#flpk.2 1996 PAW: i ‘[$p,g!>/ . ‘~ ,! .2 J REPRESENTAT~\~ ,fi + ,/, >. .> OPTO-ELECTRO’MC DEVICES DIV. ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION / \ DEVICE SPECIFICATION FOR PHOTOTRLAC COUPLER MODEL No, S21ME8


    Original     		PDF ED-96012 S21ME8 S21ME8 9601-2

    Untitled

    Abstract: No abstract text available
    Text: PD - 96012A IRF6100PbF HEXFET Power MOSFET l l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free VDSS RDS(on) max ID -20V


    Original     		PDF 6012A IRF6100PbF OT-23 Interna08] EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: P1/11 IC-SP-96012 R2 ＥＣＮ３０２１／３０２２ アプリケーションノート １．概要 ＥＣＮ３０２１ＥＣＮ３０２２は、ＩＧＢＴ Insulated Gate Bipolar Transistor を ６個内蔵したワンチップ三相ブリッジＩＣです。


    Original     		PDF P1/11 IC-SP-96012 P2/11 ECN3021/3022 P8/11 P9/11

    mosfet p channel irf

    Abstract: 4.5v to 100v input regulator
    Text: PD - 96012B IRF6100PbF HEXFET Power MOSFET l l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free VDSS RDS(on) max ID -20V


    Original     		PDF 96012B IRF6100PbF OT-23 GP86UDPI mosfet p channel irf 4.5v to 100v input regulator

    IRF P-Channel FET 100v

    Abstract: 4.5v to 100v input regulator
    Text: PD - 96012 IRF6100PbF HEXFET Power MOSFET l l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free VDSS RDS(on) max ID -20V


    Original     		PDF IRF6100PbF OT-23 EIA-481 EIA-541. IRF P-Channel FET 100v 4.5v to 100v input regulator

    TAN15

    Abstract: No abstract text available
    Text: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor


    Original     		PDF TAN15 TAN15 25oC2

    AJT150

    Abstract: ASI10548
    Text: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45° 2xB C F E D G 2xR FEATURES:


    Original     		PDF AJT150 AJT150 ASI10548

    AJT006

    Abstract: ASI10544 transistor j852
    Text: AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI AJT006 is Designed for 9 – 1215 MHz, JTIDS Applications. ØE D F G H I FEATURES: M • Internal Input/Output Matching Network • PG = 9.3 dB at 6.0 W/1215 MHz


    Original     		PDF AJT006 AJT006 ASI10544 transistor j852

    TAN300

    Abstract: No abstract text available
    Text: TAN 300 300 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN 300 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven


    Original     		PDF 25oC2 TAN300 TAN300

    375-500

    Abstract: No abstract text available
    Text: Standard Bandwidth Models SPECIFICATIONS MODEL I-332.5/85 I-437.5/125 Frequency MHz I-575/150 1-750/200 I-975/250 I-1090/260 I-1425/350 I-2050/700 290-375 375-500 500-650 650-850 850-1100 960-1220 1250-1600 1700-2400 Impedance: (Ohms) 50 50 50 50 50 50 50


    Original     		PDF I-332 I-437 I-575/150 I-975/250 I-1090/260 I-1425/350 I-2050/700 375-500

    Untitled

    Abstract: No abstract text available
    Text: High Power Bi-Directional Coupler 50Ω 24dB Coupling Maximum Ratings DC Pass SYBD-24-142HP+ 960 to 1400 MHz Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C DC Current 2A Permanent damage may occur if any of these limits are exceeded.


    Original     		PDF SYBD-24-142HP+ JB1233 2002/95/EC) M119986 ED-12832/4

    HVV0912-800

    Abstract: SEMICONDUCTORS INC
    Text: HVV0912-800 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV0912-800 HVV0912-800 429-HVVi EG-01-POXXX1 SEMICONDUCTORS INC

    Untitled

    Abstract: No abstract text available
    Text: Part Number : 18640350C Serial Number : 18640 Based LEDs Based LED type MegaStarLED Size inch T-5 Size (mm) T16 Housing size 16x35mm Base BA15d Chip number 6 Chip color red Wavelengh (mA) 628 Op. voltage (V) 24-28V AC/DC Rectifier Bridge AC current 32-42mA


    Original     		PDF 18640350C 16x35mm BA15d 4-28V 32-42mA 960-1260mcd

    35 W 960 MHz RF POWER TRANSISTOR NPN

    Abstract: 40w electronic ballast diode gp 421 Electronic ballast 40W MAPRST0912-350 transistor j08
    Text: AVIONICS PULSED POWER TRANSISTOR 350 WATTS, 960-1215 MHz, 10us PULSE, 10% DUTY 01 Nov 2006 Outline Drawing Features • • • • • • • • • MAPRST0912-350 NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation


    Original     		PDF MAPRST0912-350 35 W 960 MHz RF POWER TRANSISTOR NPN 40w electronic ballast diode gp 421 Electronic ballast 40W MAPRST0912-350 transistor j08

    MAPRST0912-50

    Abstract: No abstract text available
    Text: AVIONICS PULSED POWER TRANSISTOR 50 WATTS, 960-1215 MHz, 10us PULSE, 10% DUTY 01 Nov 2006 Outline Drawing Features • • • • • • • • • MAPRST0912-50 NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation


    Original     		PDF MAPRST0912-50 MAPRST0912-50

    FW206

    Abstract: No abstract text available
    Text: FW206 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features • High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 4-volt-drive, N channel MOSFET in one package.


    Original     		PDF FW206 1000mm 960126TM2fXHD FW206

    TACAN transistor

    Abstract: No abstract text available
    Text: MS2209 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION Features • · · · · REFRACTORY/GOLD METALIZATION LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY EMITTER SITE BALLASTED DESCRIPTION: THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND,


    Original     		PDF MS2209 MS2209 100ns 10msec, TACAN transistor

    MS2209

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2209 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • 225 MHz BANDWIDTH COMMON BASE GOLD METALLIZATION CLASS C OPERATION POUT = 90 W MIN. WITH 13 dB GAIN


    Original     		PDF MS2209 MS2209 op---12 960-1215MHz

    JTDB75

    Abstract: No abstract text available
    Text: JTDB 75 75 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The JTDB 75 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven


    Original     		PDF 25oC2 JTDB75

    TRW mmic

    Abstract: No abstract text available
    Text: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for


    OCR Scan     		PDF TLH124C TLH124C 90-degree 50-ohm 9701455-S-J1 TRW mmic

    MSH 11

    Abstract: 37.5 GHz SCHOTTKY DIODE
    Text: MSH108C HEMT Schottky Diode Mixer GaAs Telecom Products Features • RF frequency: 35 to 40 GHz • Conversion loss: 6 dB • Functions as upconverter and downconverter • Singly balanced mixer topology Description and Applications The MSH108C is a monolithic HEMi scnottKy diode, smgiy-Daianced mixer designed tor use in com­


    OCR Scan     		PDF MSH108C MSH108C 9701455-S-J1 SA038 im-2500 MSH 11 37.5 GHz SCHOTTKY DIODE

    CB410

    Abstract: stu 407 2804lSL CB-50 CB303 1090 TACAN CB-303 CB-408 SD1543-2
    Text: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications DME/IFF/TACAN puisées, classe C TYPE PAC K AG E CONFIG. Vcc V SD 1528 .280 4L STUD (A) SD 1528-1 .280 4LSL (A) SD 1528-8 .250 2LFL HERM SD 1530 .280 4L STUD (A) SD 1530-1 .280 4LSL (A)


    OCR Scan     		PDF CB-403) CB-410) CB-303) CB-4111 CB-306) CB-407) 1CB-404) CB-408) CB-409) 52LFL CB410 stu 407 2804lSL CB-50 CB303 1090 TACAN CB-303 CB-408 SD1543-2

    M171

    Abstract: AM0912-080 TACAN SD1550 M198 AM0912-300 S042 SD1512 SD8250
    Text: S IL IC O N P O W E R T R A N S IS T O R S .400 .400 2LFL S036 .400 X .500 2LFL (SO38) .400 x .400 2NLFL (S042) X .310 x .310 2LFL (S064) 960-1215 MHz CLASS C, COM MON BASE, PULSED, TACAN A P PLIC A TIO N S Vcc (V) SD1550 960-1215 15 1.5 10.0 40 40 3.3 20


    OCR Scan     		PDF SD1550 AM0912-080 SD8250 AM0912-300 AM0912-350f MIN98 SD1512* AM80912-005 AM80912-015 AM80912-030 M171 AM0912-080 TACAN SD1550 M198 AM0912-300 S042 SD1512 SD8250

    Untitled

    Abstract: No abstract text available
    Text: Order this data sheet MOTOROLA by M R F10120H/D SEMICONDUCTOR TECHNICAL DATA MRF10120H* MHz Microwave Power Transistor 120 Watts NPN 960-1215 MHz .ill! CPT0 Designed for long pulsed common base amplifiers. Guaranteed Performance at 1215 MHz - Output Power = 120 Watts Peak


    OCR Scan     		PDF F10120H/D MRF10120H* MRF10120HX MRF10120HXV MRF10120HS MRF10120HC 355C-02 1PHX31251-1 MRF10120H/D