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    ABB VS 4000 Search Results

    ABB VS 4000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PTRF4000LB Coilcraft Inc Tip/Ring Filter, 4 Function(s), 0.5A, ROHS COMPLIANT PACKAGE-8 Visit Coilcraft Inc
    TTTRF4000L Coilcraft Inc Filter, tip/ring, SMT, RoHS Visit Coilcraft Inc
    DLF 4000 Coilcraft Inc NOT RoHS. Common mode filter, data line, 4 line (add 'L' for compliant version) Visit Coilcraft Inc Buy
    TTDLF 4000LB Coilcraft Inc Filter, data line, SMT, RoHS Visit Coilcraft Inc Buy
    DLF 4000L Coilcraft Inc Common mode filter, data line, 4 line, RoHS Visit Coilcraft Inc Buy

    ABB VS 4000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 2.10 rT = 0.58 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 40L4501 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.20 rT = 0.65 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-04 April 98 Features The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static


    Original     		PDF 40L4502 40L4502 CH-5600

    GTO thyristor ABB

    Abstract: 40L4502
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4502 5SYA1209-04 40L4502 CH-5600 GTO thyristor ABB

    GTO thyristor

    Abstract: ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.20 0.65 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4502 40L4502 CH-5600 GTO thyristor ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB

    5SGA40L4501

    Abstract: ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 2.10 0.58 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 CH-5600 5SGA40L4501 ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB

    5SGF40L4502

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Feb. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4502 5SYA1209-04 40L4502 CH-5600 5SGF40L4502

    ABB thyristor 5

    Abstract: GTO thyristor ABB THYRISTOR GTO
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.08 0.29 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 mΩ V MARKETING INFORMATION Doc. No. 5SYA 1235-00 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 40L4502 40L4502 CH-5600 ABB thyristor 5 GTO thyristor ABB THYRISTOR GTO

    40L4502

    Abstract: 123500
    Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.08 rT = 0.29 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 Marketing Information mΩ V Doc. No. 5SYA 1235-00 Oct. 98 Features The 5SGT 40L4502 is an 91 mm buffered layer, Transparent Emitter non-shorted anode GTO


    Original     		PDF 40L4502 40L4502 CH-5600 123500

    press pack thyristor 10000 VDRM

    Abstract: LS 7313 S 5SGA40L4501 LS 7313 - S
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 March 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 5SYA1208-02 CH-5600 press pack thyristor 10000 VDRM LS 7313 S 5SGA40L4501 LS 7313 - S

    35L4502

    Abstract: 106A2 IGCT thyristor ABB high power igct abb IGCT
    Text: Key Parameters VDRM = 4500 V ITGQM = 4000 A ITSM = 25 kA VT0 = 1.2 V rT = 0.37 mΩ VDClink = 2800 V Integrated Gate-Commutated Thyristor 5SHY 35L4502 PRELIMINARY Doc. No. 5SYA 1218-04 Feb. 99 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 35L4502 HFBR-2412T, HFBR-1412T, CH-5600 35L4502 106A2 IGCT thyristor ABB high power igct abb IGCT

    5sya2020

    Abstract: 5SDD40H4000
    Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 3930 6170 46x103 0.885 0.135 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-01 Okt. 08 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1


    Original     		PDF 40H4000 5SYA1176-01 CH-5600 5sya2020 5SDD40H4000

    40H4000

    Abstract: No abstract text available
    Text: 5SDD 40H4000 5SDD 40H4000 Old part no. DV 889-4000-40 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 4 000 I FAVm = 3 847 I FSM = 46 000 V TO = 0.900


    Original     		PDF 40H4000 1768/138a, DV/078/02d Aug-11 Aug-11 40H4000

    5SDD 54N4000

    Abstract: D150 Rectifier A150 B150 C150 D150 VF150 VF25
    Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V mΩ Ω 5SDD 54N4000 Doc. No. 5SYA1171-00 Dec. 03 • Patented free-floating silicon technology • Very low on-state losses • Optimum power handling capability


    Original     		PDF 54N4000 5SYA1171-00 CH-5600 5SDD 54N4000 D150 Rectifier A150 B150 C150 D150 VF150 VF25

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 Apr. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 5SYA1208-02 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 4140 6500 46x103 0.905 0.109 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-00 Sept. 07 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1


    Original     		PDF 40H4000 5SYA1176-00 CH-5600

    HFBR-2521Z

    Abstract: 6227-1 j-900 HFBR-1528Z
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4521 Doc. No. 5SYA1253-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency  High electromagnetic immunity


    Original     		PDF 35L4521 5SYA1253-00 CH-5600 HFBR-2521Z 6227-1 j-900 HFBR-1528Z

    Untitled

    Abstract: No abstract text available
    Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V 5SDD 54N4000 mW Doc. No. 5SYA1171-01 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability


    Original     		PDF 54N4000 5SYA1171-01 CH-5600

    IGCT

    Abstract: igct application
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-03 May 08 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and


    Original     		PDF 35L4512 5SYA1233-03 CH-5600 IGCT igct application

    IGCT thyristor

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 April 04 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100Hz) and wide


    Original     		PDF 35L4512 5SYA1233-02 100Hz) CH-5600 IGCT thyristor

    IGCT thyristor ABB

    Abstract: high power igct abb IGCT thyristor current max igct application 35L4512
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 June 07 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and


    Original     		PDF 35L4512 5SYA1233-02 CH-5600 IGCT thyristor ABB high power igct abb IGCT thyristor current max igct application 35L4512

    35L4520

    Abstract: IGCT high voltage
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4520 Doc. No. 5SYA1248-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency  High electromagnetic immunity


    Original     		PDF 35L4520 5SYA1248-00 CH-5600 35L4520 IGCT high voltage

    35L4522

    Abstract: high power igct abb
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4522 Doc. No. 5SYA1249-00 Feb.12 • High snubberless turn-off rating  Optimizedfor low frequency  High electromagnetic immunity


    Original     		PDF 35L4522 5SYA1249-00 CH-5600 35L4522 high power igct abb

    high power igct abb

    Abstract: IGCT thyristor current max amp mta 156
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 6500 3800 26x103 1.88 0.56 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6500 Doc. No. 5SYA1245-03 June 10 • High snubberless turn-off rating • High electromagnetic immunity • Simple control interface with status feedback


    Original     		PDF 42L6500 5SYA1245-03 CH-5600 high power igct abb IGCT thyristor current max amp mta 156

    IGCT thyristor ABB

    Abstract: IGCT thyristor current max IGCT A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 igct abb
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 6500 4200 26x103 2.0 0.54 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6530 PRELIMINARY Doc. No. 5SYA1246-00 Aug. 07 • High snubberless turn-off rating • Wide temperature range


    Original     		PDF 42L6530 5SYA1246-00 CH-5600 IGCT thyristor ABB IGCT thyristor current max IGCT A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 igct abb