ABB THYRISTOR CONTROL UNIT Search Results
ABB THYRISTOR CONTROL UNIT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GRT155C81A475ME13J | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment |
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GRT155D70J475ME13J | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment |
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GRT155D70J475ME13D | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment |
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GRT155C81A475ME13D | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment |
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D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
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ABB THYRISTOR CONTROL UNIT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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3 phase motor soft starter circuit diagram, ABB
Abstract: abb SOFT STARTER CIRCUIT DIAGRAM thyristor testing 3 phase motor soft starter circuit diagram 3 phase motor soft starter diagram all types of thyristor and schematic igtb ABB Thyristor 1000 A thyristor ABB thyristor 5
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IGCT
Abstract: IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT
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ICPE01 IGCT IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT | |
schematic diagram igbt inverter welding machine
Abstract: wind energy simulink matlab wind SOLAR simulink matlab UNITROL 1000 rc helicopter circuit diagram abb acs800 bridge circuit diagram igct abb ABB Thyristor YST PROJECT REPORT ON 220 kv substation thyristor aeg
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abb r1561
Abstract: ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002
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D0201 D-69006 abb r1561 ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002 | |
GTO thyristor Curve properties
Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
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30J4502 35L4502 GTO thyristor Curve properties ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1 | |
Contextual Info: VDM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 2630 A = 4130 A = 43x103 A = 0.85 V = 0.16 mΩ Bi-Directional Control Thyristor 5STB 24Q2800 Doc. No. 5SYA1053-02 May 07 • Two thyristors integrated into one wafer • Patented free-floating silicon technology |
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24Q2800 5SYA1053-02 24Q2800 CH-5600 | |
ABB thyristor 5Contextual Info: VSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1580 A 2480 A 29700 A 1.2 V 0.458 mΩ Ω Bi-Directional Control Thyristor 5STB 18U6500 Doc. No. 5SYA1037-02 Apr. 02 • Two thyristors integrated into one wafer • Patented free-floating silicon technology |
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18U6500 5SYA1037-02 18U6500 18U6200 18U5800 CH-5600 ABB thyristor 5 | |
Contextual Info: VDM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1920 A = 3020 A = 32x103 A = 0.96 V = 0.285 mΩ Bi-Directional Control Thyristor 5STB 18N4200 Doc. No. 5SYA1040-04 May 07 • Two thyristors integrated into one wafer • Patented free-floating silicon technology |
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18N4200 5SYA1040-04 18N4200 CH-5600 | |
Contextual Info: VDM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 2430 A = 3820 A = 43x103 A = 0.85 V = 0.16 mΩ Bi-Directional Control Thyristor 5STB 24N2800 Doc. No. 5SYA1041-04 May 07 • Two thyristors integrated into one wafer • Patented free-floating silicon technology |
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24N2800 5SYA1041-04 24N2800 CH-5600 | |
abb phase control thyristorsContextual Info: V RM I T AV M I T(RMS) I TSM V T0 rT = 5200 V = 1980 A = 3100 A = 42x103 A = 1.06 V = 0.219 m Bi-Directional Control Thyristor 5STB 25U5200 Preliminary Doc. No. 5SYA1038-03 Aug. 10 • Two thyristors integrated into one wafer Patented free-floating silicon technology |
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25U5200 5SYA1038-03 CH-5600 abb phase control thyristors | |
Contextual Info: VDM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 May 07 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • |
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13N6500 5SYA1035-04 13N6500 CH-5600 | |
gate turn-offContextual Info: VSM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 May 06 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • |
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13N6500 5SYA1035-03 CH-5600 gate turn-off | |
ABB sContextual Info: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 m Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 • Two thyristors integrated into one wafer Patented free-floating silicon technology |
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13N6500 5SYA1035-04 13N6500 65echanical CH-5600 ABB s | |
abb phase control thyristorsContextual Info: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1580 A = 2480 A = 29.7x103 A = 1.2 V = 0.458 m Bi-Directional Control Thyristor 5STB 18U6500 Doc. No. 5SYA1037-03 Aug. 10 • Two thyristors integrated into one wafer Patented free-floating silicon technology |
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18U6500 5SYA1037-03 18U6500 650echanical CH-5600 abb phase control thyristors | |
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ABB thyristor 5
Abstract: A110 B110 C110
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25U5200 5SYA1038-02 25U5000 25U4600 CH-5600 ABB thyristor 5 A110 B110 C110 | |
5SHX 14H4502Contextual Info: Key Parameters VDRM = 4500 ITGQM = 1100 ITSM = 9 VT0 = 1.5 rT = 1.4 VDClink = 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 PRELIMINARY Doc. No. 5SYA 1227- 02 Feb. 99 • • • • • • • • Features Direct fiber optic control |
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14H4502 CH-5600 5SHX 14H4502 | |
Contextual Info: Key Parameters VDRM = 5500 ITGQM = 280 ITSM = 3 VT0 = 1.5 rT = 5.4 VDClink = 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 03D6004 PRELIMINARY Doc. No. 5SYA 1225-02 Feb. 99 • • • • • • • • Features Direct fiber optic control |
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03D6004 CH-5600 | |
Contextual Info: Key Parameters VDRM = 5500 ITGQM = 900 ITSM = 8 VT0 = 1.5 rT = 1.64 VDClink = 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 PRELIMINARY Doc. No. 5SYA 1226-02 Feb. 99 • • • • • • • • Features Direct fiber optic control |
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10H6004 CH-5600 | |
Contextual Info: Key Parameters VDRM = 4500 ITGQM = 340 ITSM = 3 VT0 = 1.5 rT = 4.4 VDClink = 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 PRELIMINARY Doc. No. 5SYA 1224-02 Feb. 99 • • • • • • • • Features Direct fiber optic control |
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04D4502 CH-5600 | |
ABB MCCB 160
Abstract: ABB MCCB pst 39 transformer PSR37-600-81 ABB soft starter PSTB MANUAL abb soft start PSR16 OS160D PSR105-MS495 OS125D
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1SXU000023C0202 ta23C0202 PSR105 PSR25 ABB MCCB 160 ABB MCCB pst 39 transformer PSR37-600-81 ABB soft starter PSTB MANUAL abb soft start PSR16 OS160D PSR105-MS495 OS125D | |
hp 2800 diodeContextual Info: Key Parameters VDRM = 4500 ITGQM = 630 ITSM = 5 VT0 = 1.5 rT = 2.38 VDClink = 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 PRELIMINARY Doc. No. 5SYA1223-03 Feb. 99 • • • • • • • • Features Direct fiber optic control |
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08F4502 5SYA1223-03 CH-5600 hp 2800 diode | |
abb phase control thyristors
Abstract: 5szk
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04D4200 5SYA1025-05 04D4200 CH-5600 abb phase control thyristors 5szk | |
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 19x103 A = 0.95 V = 0.575 mW Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-06 Jul 13 • Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications |
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12F4200 5SYA1021-06 CH-5600 | |
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 470 A = 740 A = 7.1•103 A = 1V = 1.5 mW Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA1025-07 Nov. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications |
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04D4200 5SYA1025-07 CH-5600 |