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    AB-162 TRANSISTOR Search Results

    AB-162 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AB-162 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DICLAD522T

    Abstract: NEL2001 NEL2004 NEL2012 NEL2035 NEL2035F03-24 V06C ZO 189 transistor
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier OUTLINE DIMENSIONS Unit: mm 2.8 ±0.2 NEL2035F03-24 of NPN epitaxial microwave power transistors 2 It incorporates emitter ballast resistors, gold metallizations and


    Original     		PDF NEL2035F03-24 NEL2035F03-24 DICLAD522T NEL2001 NEL2004 NEL2012 NEL2035 V06C ZO 189 transistor

    j608

    Abstract: 10R1 MRF6522-10R1
    Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 MRF6522-10R1 j608 10R1 MRF6522-10R1

    MRF6522-10

    Abstract: MRF6522-10R1 10R1 Ni200 mosfet 4496
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 MRF6522-10R1 MRF6522-10 MRF6522-10R1 10R1 Ni200 mosfet 4496

    j608

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 j608

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522â MRF6522-10R1

    class d amp ic

    Abstract: MRF1000MA MRF1000MB 2N3906 20 A class b power transistors current gain S22 Package equivalent 1090 Z1-Z10
    Text: Order this document by MRF1000MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1000MB Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.


    Original     		PDF MRF1000MB/D MRF1000MB MRF1000MA/D class d amp ic MRF1000MA MRF1000MB 2N3906 20 A class b power transistors current gain S22 Package equivalent 1090 Z1-Z10

    905-170

    Abstract: MRF3010 VK200 VK20019-4B
    Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    Original     		PDF MRF3010/D MRF3010 905-170 MRF3010 VK200 VK20019-4B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    Original     		PDF MRF3010/D MRF3010 MRF3010 MRF3010/D

    Ericsson 20082

    Abstract: 20082 PTB 20082
    Text: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion


    Original     		PDF 1-877-GOLDMOS 1301-PTB Ericsson 20082 20082 PTB 20082

    Ericsson 20082

    Abstract: No abstract text available
    Text: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion


    Original     		PDF 1-877-GOLDMOS 1301-PTB Ericsson 20082

    class d amp ic

    Abstract: 2N3906 MOTOROLA MRF1000 MRF1000MB 2N3906 J500
    Text: MOTOROLA Order this document by MRF1000MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1000MB Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.


    Original     		PDF MRF1000MB/D MRF1000MB class d amp ic 2N3906 MOTOROLA MRF1000 MRF1000MB 2N3906 J500

    Q11K1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1000MB/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistors MRF1000MB Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.


    Original     		PDF MRF1000MB/D MRF1000MB MRF1000MB MRF1000MB/D Q11K1

    sy 164

    Abstract: sy 166 sy 160 OC870 sy-162 sy162 sy 103 OC824 SY164 OC872
    Text: UMSCHLÜSSELLUNGSLISTE DDR-TRANSISTOREN und -DIODEN gültig ab 01.01.1964 nach TGL 19 442 NEUER TYP ALTER TYP NEUER BASTELTYP ALTER BASTELTYP GC 100 GC 101 OC 870 F≤ 25 dB OC 870 F≤ 10 dB LC 810 LC 810 LA 25 LA 25 GC 115 GC 116 GC 117 GC 118 GC 121 GC 122


    Original     		PDF

    j718

    Abstract: VK200/10-3B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    OCR Scan     		PDF MRF3010 DL110/D) MRF3010 VK200 j718 VK200/10-3B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pulse Pow er Transistors Designed for Class A and AB common emitter amplifier applications in the low-power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A


    OCR Scan     		PDF IS21I MRF1000MB

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pulse Pow er Transistors M RF1000M B Designed for Class A and AB common emitter amplifier applications in the low-power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A


    OCR Scan     		PDF RF1000M IS11I IS12I MRF1000MB

    RF power transistors with s-parameters

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1000MA MRF1000MB The RF Line M icrowave Pulse Power Transistors . . . designed for Class A and AB common emitter amplifier applications in the low-power stages of IFF, DME, TACAN, radar transmitters, and CW systems.


    OCR Scan     		PDF MRF1000MA MRF1000MB RF1000M RF power transistors with s-parameters

    2N2708

    Abstract: Ferranti ZT84 ferranti 2N2907a 2N3571 2N3571 NPN BFY90 T018 ZT189 ZT211 ZT86
    Text: NPN LOW NOISE TABLE 5 NPN SILICON PLANAR LOW NOISETRANSISTORS The transistors shown in this table are characterised for lo w noise, low level am plification and are particularly suitable for audio pre-am plifiers as well as universal applications. The devices are listed in order of decreasing Breakdown Voltage V c e o / decreasing Collector


    OCR Scan     		PDF 2N3571 2N3572 2N2102 2N4036 2N2708 Ferranti ZT84 ferranti 2N2907a 2N3571 NPN BFY90 T018 ZT189 ZT211 ZT86

    Ericsson 20082

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion


    OCR Scan     		PDF Collector-91 Ericsson 20082

    2N1893

    Abstract: 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
    Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


    OCR Scan     		PDF 2N3571 2N3572 2N2102 2N4036 2N1893 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92

    Untitled

    Abstract: No abstract text available
    Text: 12E D I b3b?2S4 OOfiflETM b | T MOTOROLA MOTOROLA SC SEMICONDUCTOR XSTRS/R - 3 3 '2 .7 F TECHNICAL DATA T P A 0102-130 The RF Line V H F P o w e r T ra n sis to r . . . designed prim arily fo r w ideband, large-signal output and driver am plifier stages in


    OCR Scan     		PDF

    transistor cq 415

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20239 12 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description The PTB 20239 is a class AB, NPNI, com m on em itter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz Rated at 12 watts minimum output power, it m ay be used for both CW


    OCR Scan     		PDF

    C735

    Abstract: C749 NPN C460 C644 BS9300 c495 C-725 CV7580 c496 c727
    Text: 7 BS9000 Converted CV Case Outlines Small Signal Transistors . B S Type Number Com m ercial Equivalent Case Outline Polarity Ab solute Maximum Rating VCB V VCE V h F E at Co llecto r Current VEB V hFE min. hFE max. 1C mA M in. fT MHz Com m ents 0-76 0 -4 8 0


    OCR Scan     		PDF BS9000 8S9300 BS9300 2N2221A' 2N2222A* 2N1893 2N1613 C735 C749 NPN C460 C644 c495 C-725 CV7580 c496 c727

    sy 160

    Abstract: Scans-048 OC871 gf 122 DSAGER00037 GC101 OC870 OC883 LF 833
    Text: UMSCHLÜSSELLUNGSLISTE DDR-TRANSISTOREN und -DIODEN gültig ab 01.01.1964 nach TGL 19 442 NEUER ALTER NEUER TYP_ TYP_ BASTELTYP ALTER BASTELTYP GC 100 GC 101 OC 870 F< 25 dB OC 870 F< 10 dB LC 810 LC 810 LA 25 LA 25 GC GC GC GC GC GC


    OCR Scan     		PDF