BCP51M
Abstract: BCP52M BCP53M BCP54M BCP56M SCT595 SCT-595
Text: BCP51M.BCP53M PNP Silicon AF Transistor 4 For AF driver and output stages 5 High collector current Low collector-emitter saturation voltage 3 Complementary types: BCP54M.BCP56M NPN 2 1 VPW05980 Type Marking Pin Configuration Package BCP51M AAs
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BCP51M.
BCP53M
BCP54M.
BCP56M
VPW05980
BCP51M
BCP52M
SCT595
BCP51M
BCP52M
BCP53M
BCP54M
SCT595
SCT-595
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BCP51M
Abstract: BCP52M BCP53M BCP54M BCP56M SCT595 FE1600 EHP00264
Text: BCP51M.BCP53M PNP Silicon AF Transistor 4 For AF driver and output stages 5 High collector current Low collector-emitter saturation voltage 3 Complementary types: BCP54M.BCP56M NPN 2 1 VPW05980 Type Marking Pin Configuration Package BCP51M AAs
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BCP51M.
BCP53M
BCP54M.
BCP56M
VPW05980
BCP51M
BCP52M
SCT595
BCP51M
BCP52M
BCP53M
BCP54M
SCT595
FE1600
EHP00264
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microwave limiter
Abstract: MMIC limiter microwave chip limiter LNA at microwave range mmic A TRANSISTOR noise figure measurements MTT-38 microwave receiver mtt38 AuSn solder
Text: April 2003 New Technology Advance in Integrated High Power Limiter/LNA Performance by Inder J. Bahl, M/A-COM, Inc. G aAs MMIC devices are commonly used in both commercial and military microwave systems. Because they comprise fine transistor geometries, these devices are susceptible
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10dBm
MTT-38,
microwave limiter
MMIC limiter
microwave chip limiter
LNA at microwave range
mmic A
TRANSISTOR noise figure measurements
MTT-38
microwave receiver
mtt38
AuSn solder
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directional coupler chip 8 GHz
Abstract: x-band limiter electromagnetic pulse generator x-band mmic lna 5310 MMIC limiter band Limiter circulator monolithic "electromagnetic pulse" electromagnetic pulse
Text: An Examination of Recovery Time of an Integrated Limiter/LNA • Jim Looney, David Conway, and Inder Bahl G aAs monolithic microwave integrated circuits MMICs are widely used in commercial and military microwave systems. Due to the fine geometry used in MMIC transistors, these circuits are susceptible to
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2.5 GHz RF power transistors with s-parameters
Abstract: No abstract text available
Text: 1Stanford Microdevices SHF-0186K Product Description Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky
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SHF-0186K
SHF-0186K
SHF-0186K-TR1
SHF-0186K-TR2
SHF-0186K-TR3
2.5 GHz RF power transistors with s-parameters
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Untitled
Abstract: No abstract text available
Text: S Stanford Microdevices SHF-0187 Product Description Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current
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SHF-0187
SHF-0187
DC-12
SHF-0187-TR1
F-0187-TR2
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Untitled
Abstract: No abstract text available
Text: 1Stanford Microdevices Product Description SHF-0186K Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky
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SHF-0186K
SHF-0186K
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fet K 793
Abstract: A/LM 793
Text: Stanford Microdevices SHF-0187 Product Description Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current
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SHF-0187
SHF-0187
DC-12
SHF-0187-TR1
F-0187-TR2
fet K 793
A/LM 793
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Untitled
Abstract: No abstract text available
Text: f¡iS Siati ford M ¡.crudev ices Product Description SHF-0187 Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current
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SHF-0187
DC-12
SHF-0187
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Untitled
Abstract: No abstract text available
Text: SHF-0186K Product Description Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky leakage current im proves power added efficiency.
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SHF-0186K
SHF-0186K
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727 diode
Abstract: diode 716 transistor 717 TRANSISTOR 726 716 transistor cfy transistor 35 CFY
Text: G aAs Components Infineon •»ihnciogift* HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Component Types Package Types Title Page 11.1 Preliminary Remarks 716 11.2 Introduction to HiRel and Space Qualified Devices
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BFY180,
HPAC140,
MWP-25,
MWP-35
CGY41
727 diode
diode 716
transistor 717
TRANSISTOR 726
716 transistor
cfy transistor
35 CFY
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Q62702-C2594
Abstract: No abstract text available
Text: SIEMENS BCP 51M . BCP 53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN BCP 51M AAs Q62702-C2592 BCP 52M AEs Q62702-C2593
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SCT-595
Q62702-C2592
Q62702-C2593
Q62702-C2594
300ns,
BCP53M
Q62702-C2594
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AN-A002
Abstract: AN-G002 testing amplifier circuit ATF-10136 TF-10136 low noise design ATF 10136 stub tuner matching 10136 stub tuner waveguide AM Noise Reduction System
Text: W hpfiM %PH AE CWKLAERT DT mL' AN-G 002 A TF-10136 Dem onstration Am plifier Novem ber, 1990 Introduction This Applications Bulletin describes a one stage low noise am plifier designed using the HP ATF-10136 G aAs FET transistor. This amplifier demonstrates the capabilities of this
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TF-10136
ATF-10136
ATF-10136.
ATF10136
5091-4863E
AN-A002
AN-G002
testing amplifier circuit
low noise design ATF 10136
stub tuner matching
10136
stub tuner waveguide
AM Noise Reduction System
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L1102
Abstract: "sot-90B" sot90b LF 428 4N38 4N38A IEC134 OPTOCOUPLER dc SOT-90B
Text: 4N38 4N38A » OPTOCOUPLERS 1— \ O ptically coupled isolators consisting o f an infrared em itting G aAs diode and an npn silicon photo transistor. They are suitable fo r use w ith T T L integrated circuits. Features • High maximum o u tp u t voltage
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4N38A
E90700
0110b
0035b4E
L1102
"sot-90B"
sot90b
LF 428
4N38
4N38A
IEC134
OPTOCOUPLER dc
SOT-90B
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SHF-0186-TR3
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SHF-0186 Stanford M icrodevices’ SHF-0186 is a AIG aAs/GaAs Heterostructure FET housed in a low cost surface-m ount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky
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SHF-0186
SHF-0186
DC-12
SHF-0186-TR1
SHF-0186-TR2
SHF-0186-TR3
SHF-0186-TR3
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PHILIPS CNX38
Abstract: CBC 184 transistor CNX38 CNX38U 181 OPTOCOUPLER
Text: N AMER PHILIPS/DISCRETE 2SE D • fc.bS3tm Jl GG2GT51 T CNX38 OPTOCOUPLER O ptically coupled isolator consisting o f an infrared emitting G aAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r T T L integrated circuits.
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GG2GT51
CNX38
CNX38U
10/is;
T-41-83
5Z70428
PHILIPS CNX38
CBC 184 transistor
CNX38
CNX38U
181 OPTOCOUPLER
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Untitled
Abstract: No abstract text available
Text: Panasonic Transmissive Photosensors Photo Interrupters CNA1015 Photo Interrupters U nit : mm • Outline - CNA1015 is a transmittive photosensor series in which a high efficiency G aAs infrared light em itting diode is used as the light em itting element, and a high sensitivity
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CNA1015
CNA1015
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Untitled
Abstract: No abstract text available
Text: Panasonic Transmissive Photosensors Photo Interrupters ON1387 Photo Interrupters U nit : mm • Outline ON1387 is a transm ittive photosensor series in which a high efficiency G aAs infrared light em itting diode is used as the light em itting element, and a high sensitivity
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ON1387
ON1387
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ON1114
Abstract: 5002A
Text: Panasonic Transmissive Photosensors Photo Interrupters ON1114 Photo Interrupter For contactless SW, object detection • Outline O N I 114 is a photocoupler in w hich a high efficien cy G aAs infrared light em itting diode is used as the light em itting elem ent,
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ON1114
ON1114
5002A
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Transistor 337
Abstract: BD335 BD337 c 337 25 IM 337 BD331 12 v transistors 337 bd338 OF IC 337 T3329
Text: BD331; 333 BD335; 337 J^ P hilips international » sle • tiigöel DüMSflöb aas « p h i n SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered
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BD331;
BD335;
OT-82
BD332,
BD334,
BD336
BD338.
BD331
Transistor 337
BD335
BD337
c 337 25
IM 337
12 v transistors 337
bd338
OF IC 337
T3329
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OPTOCOUPLER dc
Abstract: H11B1 v optocoupler H11b1 H11B1 H11B2 H11B3 IEC134 sot908
Text: H11B1 H11B2 H11B3 T O OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared em itting G aAs diode and an npn silicon photo Darlington transistor. Features • Very high o u tp u t/in p u t DC current transfer ratio • isolation voltage o f 2 k V RMS and 2.82 kV DC
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H11B1
H11B2
H11B3
0110b
7Z34-79BA
bbS3T31
D03SSD4
OPTOCOUPLER dc
H11B1 v
optocoupler H11b1
H11B1
H11B2
H11B3
IEC134
sot908
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TRL15
Abstract: cfy transistor CFY 18 heft DRO components
Text: In fineon fschncio^iej 15 GHz G aAs-FE T B u ffe re d O s c illa to r A p p lic a tio n Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. !n addition a spacer for
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2SK281
Abstract: 203l2 NE218 NE21889 NE21800
Text: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure
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Lj457414
NE21800
NE21889
NE218
NE21800)
2SK281
203l2
NE21889
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MA4GM2
Abstract: No abstract text available
Text: GaAs FET MMIC Control Product Process Screening and Quality Procedures In processing G aAs FE T MMIC Control Products, consistency and reproducibility is ensured by measuring key electrical parameters on each wafer at the main steps and using the results for statistical process control. If a process goes out
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