AADQ Search Results

Contextual Info: =• = IBM13M32734BCD Preliminary 32M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM • Performance: i -2 6 0 ,-3 6 0 | Reg. i Buff. ; Reg. ! Buff DIMM CAS Latency

Contextual Info: IBM13M16734BCD 16M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: -10 j Device Latency j Clock Frequency j -260 | -360 I 3 j 2 ; 2 66 j 100 5 100 j

Contextual Info: IBM13M13734BCA 128M x 72 2-B an k R eg istered /B u ffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 128Mx72 Synchronous DRAM DIMM • Performance: i -260 CL=2 ! -360 CL=3 I -360 CL=2 ji Units: :. :.:. :.:.

Contextual Info: IBM13M16734BCD 16M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: -10 i -260 Ì -360 ! -360 ! Units | Device Latency Clock Frequency

MAX6897AAZT/V T

Abstract: MAX6896AALT MAX6897
Contextual Info: EVALUATION KIT AVAILABLE MAX6895–MAX6899 Ultra-Small, Adjustable Sequencing/ Supervisory Circuits General Description Features The MAX6895–MAX6899 is a family of small, low-power, voltage-monitoring circuits with sequencing capability. These miniature devices offer tremendous flexibility with

A49AN

Abstract: adq38 360ac In400I
Contextual Info: I =¥= =• = IBM13N16644HC IBM13N16734HC Preliminary 16M x 64/72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 16Mx64/72 Synchronous DRAM DIMM • Three speed sorts: • -260 and -360 for PC100 applications

11-CQ2

Contextual Info: IBM13N4649JC IBM13N4739JC PRELIMINARY 4M X 64/72 2 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered Byte Dual In-line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Performance: CAS Latency fcK Clock Frequency tcK

Transistor TT 2246

Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23

jd 1801 data sheet

Abstract: AAAM SOT23-6 ABAA sot23 SOT23-6 JD 1801 fm 4213 ic AAHB LM 1117 bs33 SOT23-6 AAFQ
Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − August 31, 2003 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A IM3−2.1 FZEF SOT23−3 MAX 809L UR AA SOT23−3 LM

toshiba laptop schematic diagram

Abstract: acer motherboard circuit diagram MAX1270 C source code MAX11871 mp 9141 es dc-dc lm324 pwm speed motor 220v DC MOTOR SPEED CONTROLLER schematic ACER laptop schematic diagram L-band down converter for satellite tuner wideband acer laptop MOTHERBOARD Chip Level MANUAL acer laptop motherboard circuit diagram
Contextual Info: Welcome to the Maxim Full-Line Data Catalog. We hope you find this CD-ROM a helpful tool for selecting the best Maxim IC for your design. This CD-ROM contains: The Maxim Full-Line Data Catalog The menu to the left of this page lists the available documents. Use the small

IC 0342

Abstract: MH16S64DAMD A92X
Contextual Info: Prelim inary Spec. MITSUBISHI LSis Some contents are subject to change without notice. MH16S64DAMD -6,-7,-8 1 0 7 3 7 41824-B IT 16777216 - W ORD BY 64-B IT S ynchronous DRAM DESCRIPTION The MH1 6S 64D A M D is 1 677721 6 - word by 64-bit Synchronous DRAM m odule. This consists of

MCM40100

Abstract: MCM40L100 MCM514400
Contextual Info: Order this data sheet by MCM40100/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MCM40100 MCM40L100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40100S and MCM40L100S are 40M, dynamic random access memory

Contextual Info: = = = • = IB M 1 3 M 6 4 7 3 4 C C A Preliminary 64M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM ! | -75A Reg 4 | DIMM CAS Latency i f CK iW : • • • • •

Contextual Info: IBM13Q4739CC 4M x 72 Registered SDRAM Module Features • Programmable Operation: • 200-Pin emerging JEDEC Standard, Buffered 8Byte Dual In-line Memory Module • 4M x 72 Synchronous DRAM DIMM • Performance: -10 : U nits j ! fcK j C lo c k F re q u e n c y

Contextual Info: IBM13M32734BCB 32M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM : -75A I Reg : DIMM CAS Latency : fCK Ha C I: Clock Frequency : ; Units | 4 ; 133 Ì 100 j MHz ! 7.5 i

ADQ45

Abstract: AADQ44 13N4649
Contextual Info: Discontinued 12/38 » last order; 9/99 las! ship IBM13N4649JC IBM13N4739JC 4M x 64/72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Mem­ ory Module • 4Mx64/72 Synchronous DRAM DIMM • Two speed sorts: • -360 for PC100 applications

dq35j

Contextual Info: IBM13T8644MPE 8M x 64 PC100 SDRAM SO DIMM Preliminary Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 8Mx64 Synchronous DRAM SO DIMM • Performance: PC100 -360 CAS Latency fcK Clock Frequency tcK Clock Cycle *AC | Clock Access Tim e |

Contextual Info: IBM13M32734BCA Preliminary 32M X 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM -75A ! DIMM CAS Latency • • • • • • • s Clock Cycle tAC \ Clock Access Tim e

ADQ37

Contextual Info: I =¥= =• = IBM13N4644MC IBM13N4734MC Preliminary 4M x 64/72 1 Bank Unbuffered SDRAM Module Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only

Contextual Info: IBM13N8739CC 8M x 72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Mem­ ory Module • 8Mx72 Synchronous DRAM DIMM • Performance: 10 ^ ck I Clock Frequency 10 0 ^ ck I Clock Cycle t/\c i Units ; 3 CAS Latency j Clock Access Tim e I

MAX6896AALT

Contextual Info: EVALUATION KIT AVAILABLE MAX6895–MAX6899 Ultra-Small, Adjustable Sequencing/Supervisory Circuits General Description The MAX6895–MAX6899 is a family of small, low-power, voltage-monitoring circuits with sequencing capability. These miniature devices offer tremendous flexibility with

MCM36256-80

Abstract: MCM36256 M/MCM36256S-80
Contextual Info: NOV i 4 '99ft] Order this data sheet by MCM36256/D MOTOROLA • SEMICONDUCTOR " TECHNICAL DATA MCM36256 Advance Information 256K x 36 Bit Dynamic Random Access Memory Module The MCM36256S is a 9M, dynamic random access memory DRAM module or­ ganized as 262,144 x 36 bits. The module is a 72-lead single-in-line memory module

Contextual Info: TO SH IBA THMY721630BEG-80 T EN T A T IV E T O S H IB A H YBR ID D IG ITAL INTEG RATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721630BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404BFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: I = = = = ¥ = = = ’ = IB M 1 3 N 4 6 4 4 M C IB M 1 3 N 4 7 3 4 M C Preliminary 4M x 64/72 1 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Two speed sorts: • -360 for PC100 applications